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10-F0122PA150SC-P990F09 参数 Datasheet PDF下载

10-F0122PA150SC-P990F09图片预览
型号: 10-F0122PA150SC-P990F09
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 379 K
品牌: VINCOTECH [ VINCOTECH ]
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FZ12 / F0122PA150SC
preliminary datasheet
flowPHASE0
Features
Trench Fieldstop IGBT technology
2-clip housing in 12mm and 17mm height
Compact and low inductance design
4
1200V/150A
flow0 housing
Target Applications
Motor Drive
UPS
Schematic
Types
FZ122PA150SC
F0122PA150SC
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
92
119
450
172
260
±20
10
800
175
V
A
A
W
V
μs
V
°C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
75
101
300
106
160
175
V
A
A
W
°C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
copyright Vincotech
1
Revision: 1