2N7002E
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
r
DS(on)
(W)
3 @ V
GS
= 10 V
I
D
(mA)
240
FEATURES
D
D
D
D
D
Low On-Resistance: 3
W
Low Threshold: 2 V (typ)
Low Input Capacitance: 25 pF
Fast Switching Speed: 7.5 ns
Low Input and Output Leakage
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
TO-236
(SOT-23)
Marking Code: 7Ewl
G
1
3
S
2
D
E = Part Number Code for 2N7002E
w
= Week Code
l
= Lot Traceability
Top View
Ordering Information: 2N7002E-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
60
"20
240
190
1300
0.35
0.22
357
-55 to 150
Unit
V
mA
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70860
S-31987—Rev. D, 13-Oct-03
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