2N7002E
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
1.0
Output Characteristics
5V
1.2
Transfer Characteristics
T
J
= -55_C
V
GS
= 10, 9, 8, 7, 6 V
0.8
I
D
- Drain Current (A)
0.9
I
D
- Drain Current (A)
25_C
125_C
0.6
4V
0.6
0.4
0.2
3V
0.0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
0.3
0.0
0
1
2
3
4
5
6
7
V
GS
- Gate-to-Source Voltage (V)
4
On-Resistance vs. Gate-Source Voltage
3.5
3.0
On-Resistance vs. Drain Current
r
DS(on)
- On-Resistance (
Ω )
3
I
D
@ 250 mA
2
I
D
@ 75 mA
1
r
DS(on)
- On-Resistance (
Ω )
2.5
2.0
1.5
1.0
0.5
V
GS
= 4.5 V
V
GS
= 10 V
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2.0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
I
D
- Drain Current (A)
0.4
0.2
I
D
= 250
mA
V
GS(th)
- Variance (V)
-0.0
-0.2
-0.4
-0.6
-0.8
-50
On-Resistance vs. Junction Temperature
V
GS
= 10 V @ 250 mA
Threshold Voltage Variance Over Temperature
r
DS(on)
- On-Resistance (
Ω )
(Normalized)
1.6
1.2
V
GS
= 4.5 V
@ 200 mA
0.8
0.4
0.0
-50
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
T
J
- Junction Temperature (_C)
Document Number: 70860
S-31987—Rev. D, 13-Oct-03
www.vishay.com
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