ES07B / ES07D
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Maximum instantaneous
forward voltage
1.0 A
3)
Test condition
Symbol
V
F
I
R
I
R
t
rr
C
j
4
Min
Typ.
Max
0.98
10
50
25
Unit
V
µA
µA
ns
pF
Maximum DC reverse current at T
A
= 25°C
rated DC blocking voltage
T
A
= 100°C
Reverse recovery time
Typical capacitance
3)
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
4 V, 1 MHz
Pulse test, 300
µs
pulse with 1 % duty cycle
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
10
7,00
f = 1MHz
6,00
1
IF [A]
5,00
CD [pF]
4,00
3,00
2,00
1,00
0,1
typical @ 25°C
typical @ 150°C
typical @ 100°C
0,01
0,001
0,00
18242
0,20
0,40
0,60 0,80
VF [V]
1,00
1,20
1,40
0,00
0,1
18244
1
VR [V]
10
100
Figure 1. Typical Forward Characteristics
Figure 3. Typ. Diode Capacitance vs. Reverse Voltage
1,4
ambient temperature
tie point temperature
1000
Average Forward Current [A]
1,2
1,0
IR [µA]
100
TJ=25°C
TJ=50°C
TJ=75°C
TJ=100°C
TJ=125°C
TJ=150°C
TJ=0°C
TJ=-50°C
10
0,8
0,6
0,4
1
0,1
0,2
0,0
0
0,01
0
20
40
60
80
100
VR [V]
120
140
160
180
200
25
18243
100
50
75
Temperature (Ambient or Tie) [°C]
125
150
18245
Figure 4. Typical Reverse Characteristics
Figure 2. Forward Current Derating Curve
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Document Number 85737
Rev. 1.7, 13-Apr-05
VISHAY [ VISHAY TELEFUNKEN ]
