IRFL210, SiHFL210
Vishay Siliconix
L
Vary
t
p
to obtain
required I
AS
R
G
V
DS
t
p
V
DD
D.U.T
I
AS
10
V
t
p
0.01
Ω
I
AS
Fig. 12b - Unclamped Inductive Waveforms
V
DS
+
-
V
DD
V
DS
Fig. 12a - Unclamped Inductive Test Circuit
120
E
AS
, Single Pulse Energy (mJ)
100
80
60
40
20
0
V
DD
= 50
V
25
50
75
100
I
D
0.43 A
0.61 A
Bottom 0.90 A
Top
125
150
91193_12C
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
12
V
0.2
µF
0.3
µF
V
GS
Q
GS
Q
G
Q
GD
D.U.T.
+
-
V
DS
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
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Document Number: 91193
S-81377-Rev. A, 30-Jun-08
VISHAY [ VISHAY TELEFUNKEN ]
