Si4410DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
=10 A
V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 15 V, I
D
= 10 A
I
S
= 2.3 A, V
GS
= 0 V
20
0.011
0.015
38
0.7
1.1
0.0135
0.020
1.0
3.0
"100
1
25
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gt
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.3 A, di/dt = 100 A/ms
V
DD
= 25 V, R
L
= 25
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
V
DS
= 15 V, V
GS
= 5 V, I
D
= 10 A
V
DS
= 15 V V
GS
= 10 V I
D
= 10 A
V,
V,
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
0.5
20
37
7
7.0
1.5
19
9
70
20
40
2.6
30
20
100
80
80
ns
W
34
60
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing. Values shown are for product revision A.
www.vishay.com
2
Document Number: 71726
S-40838—Rev. L, 03-May-04
VISHAY [ VISHAY TELEFUNKEN ]
