Si7478DP
New Product
TYPICAL CHARACTERISTICS
0.012
Vishay Siliconix
25 °C, unless noted
10000
On-Resistance (
Ω
)
0.010
Capacitance (pF)
V
GS
= 4.5 V
0.008
8000
C
iss
6000
0.006
V
GS
= 10 V
-
4000
r
DS(on)
C
2000
0.004
-
0.002
C
oss
C
rss
0.000
0
10
20
I
D
30
40
50
60
0
0
10
V
DS
20
30
40
50
60
-
Drain Current (A)
-
Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
Gate-to-Source Voltage (V)
V
DS
= 30 V
I
D
= 20 A
r
DS(on)
-
On-Resistance
(Normalized)
1.8
V
GS
= 10 V
I
D
= 20 A
Capacitance
8
1.6
1.4
6
1.2
4
1.0
V
GS
-
2
0.8
0
0
20
Q
g
40
60
80
100
120
0.6
-
50
-
25
0
25
50
75
100
125
150
-
Total Gate Charge (nC)
T
J
-
Junction Temperature (
˚
C)
Gate Charge
0.020
60
0.016
On-Resistance vs. Junction Temperature
Source Current (A)
On-Resistance (
Ω
)
T
J
= 150
˚
C
10
I
D
= 20 A
0.012
0.008
-
I
S
T
J
= 25
˚
C
r
DS(on)
-
0.004
1
0.0
0.000
0.2
V
SD
-
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
Source-to-Drain Voltage (V)
V
GS
-
Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
www.vishay.com
3
VISHAY [ VISHAY TELEFUNKEN ]
