IRFB11N50A, SiHFB11N50A
Vishay Siliconix
R
D
12
V
GS
V
DS
10
D.U.T.
+
R
G
I
D
, Drain Current (A)
-
V
DD
8
10V
Pulse
Width
≤
1
µs
Duty Factor
≤
0.1
%
6
Fig. 10a - Switching Time Test Circuit
4
V
DS
2
90
%
0
25
50
75
100
125
150
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
T
C
, Case Temperature ( ° C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
15
V
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T.
I
AS
0.01
Ω
+
A
-
V
DD
A
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
Fig. 12b - Unclamped Inductive Waveforms
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5
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