Preliminary
VG3617161DT
16Mb CMOS Synchronous Dynamic RAM
VIS
2.4 Operative Command Table
(1/3)
Current state
CS
H
L
RAS
X
H
H
H
L
CAS
X
H
L
WE
X
X
H
L
Address
Command
Action
Nop or Power down
Notes
Idle
X
X
DESL
2
2
3
3
NOP or BST
READ/READA
WRIT/WRITA
ACT
Nop or Power down
ILLEGAL
L
BA,CA,A10
BA,CA,A10
BR,RA
BA,A10
X
L
L
ILLEGAL
L
H
H
L
H
L
Row active
L
L
PRE/PALL
REF/SELF
MPS
Nop
L
L
H
L
Refresh or Self refresh
Mode register access
Nop
4
L
L
L
Op-Code
X
Row active
H
L
X
H
H
H
L
X
H
L
X
X
H
L
DESL
X
NOP or BST
READ/READA
WRIT/WRITA
ACT
Nop
L
BA,CA,A10
BA,CA,A10
BA,RA
BA,A10
X
Begin read:Determine AP
Begin write:Determine AP
ILLEGAL
5
5
3
6
L
L
L
H
H
L
H
L
L
L
PRE/PALL
REF/SELF
MRS
Precharge
L
L
H
L
ILLEGAL
L
L
L
Op-Code
X
ILLEGAL
Read
H
X
X
X
DESL
Continue burst to end ® Row active
Continue burst to end ® Row active
Burst stop ® Row active
L
L
H
H
H
H
H
L
X
X
NOP
BST
L
L
L
L
L
L
H
H
H
L
L
L
H
L
BA,CA,A10
BA,CA,A10
BA,RA
BA,A10
X
READ/READA
WRIT/WRITA
ACT
Term burst, new read:Determine AP
Term burst, start write:Determine AP
ILLEGAL
7
7,8
3
H
H
L
H
L
L
PRE/PALL
REF/SELF
MRS
Term burst,precharging
ILLEGAL
L
H
L
L
L
Op-Code
X
ILLEGAL
Write
X
X
X
DESL
Continue burst to end ® write recovering
Continue burst to end ® Write recovering
Burst stop ® Row active
L
L
H
H
H
H
H
L
X
X
NOP
BST
L
L
L
L
L
L
H
H
L
L
L
L
L
L
H
L
BA,CA,A10
BA,CA,A10
BA,RA
READ/READA
WRIT/WRITA
ACT
Term burst, start read: determine AP
Term burst, new write:Determine AP
ILLEGAL
7,8
7
H
H
L
H
L
3
BA,A10
X
PRE/PALL
REF/SELF
MRS
Term burst precharging
ILLEGAL
9
H
L
L
Op-Code
ILLEGAL
Document:1G5-0160
Rev.1
Page 11
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
