VIS
Parameter
Operating current
Symbol
I
CC1
Test Conditions
Burst length=1
t
RC
≥
t
RC
(MIN.)
VG3617801CT
16Mb CMOS Synchronous Dynamic RAM
DC Characteristics(Recommended Operating Conditions unless otherwise noted)
CL=3
VG3617801CT
-8H
-8L
-10
Min Max Min Max Min Max
90
90
85
85
3
2
30
85
3
2
30
80
3
2
30
Unit
mA
Notes
1,2
,Io=0mA CL=2
One bank active
Precharge standby
current in power
down mode
Precharge standby
current in Nonpower
down mode
I
CC2
P
CKE
≤
V
IL(MAX.)
t
CK
=15ns
≤
V
IL(MAX)
t
CK
=
∞
≥
V
IH(MIN.)
t
CK
=15ns
mA
I
CC2
PS
CKE
I
CC2
N
CKE
CS
mA
≥
V
IH(MIN.)
6
6
6
Input signals are changed.
one time during 30ns.
I
CC2
NS
CKE
≥
V
IH(MIN.)
, tCK=
∞
CLK
≤
V
IL(MAX.)
CKE
CKE
CKE
CS
Input signals are stable.
Active standby current I
cc3
P
in power down mode
I
cc3
PS
Active standby current I
cc3
N
in nonpower down
mode
≤
V
IL(MAX.)
,t
CK
=15ns
≤
V
IL(MAX.)
,t
CK
=
∞
≥
V
IL(MAX.)
,t
CK
=15ns
3
2
30
3
2
30
3
2
30
mA
mA
≥
V
IL(MIN.)
15
15
15
Input signals are changed
one time during 30ns
I
cc3
NS
≥
V
IH(MIN.)
t
CK
=
∞
CLE
≤
V
IL(MAX.)
CKE
Input signals are stable.
Operating current
(Burst mode)
Refresh current
Self refresh current
Input leakage current
I
cc4
t
CK
≥
tCK
(MIN.)
,Io=0mA CL=3
120
115
110
105
2
-5
-5
5
5
0.4
2.4
2.4
-5
-5
120
105
110
105
2
5
5
0.4
2.4
-5
-5
105
100
100
95
2
5
5
0.4
mA
1,2
Burst length=4
I
cc5
I
cc6
I
LI
t
RC
≥
t
RC
(MIN.)
CL=2
CL=3
CL=2
mA
mA
uA
uA
V
V
2
CKE
≤
0.2V
V in
≥
0
,
V in
≤
V DD
+0.3V
Pins not under test=0V
Output leakage current I
LO
Output Low Voltage
Output High Voltage
V
OL
V
OH
V
OUT
≥
0
,
V
OUT
≤
V
DD
+0.3V
DQ# in H-Z., Dout disabled
I
OL
=2mA
I
OH
=2mA
Notes 1.I
cc
depends on output loading and cycle rates. Specified values are obtained with the output open.
2.I
cc
is measured on condition that addresses are changed only one time during t
CK(MIN.)
.
Document:1G5-0133
Rev.1
Page 5
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
