欢迎访问ic37.com |
会员登录 免费注册
发布采购

AO4406A 参数 Datasheet PDF下载

AO4406A图片预览
型号: AO4406A
PDF下载: 下载PDF文件 查看货源
内容描述: 30V N沟道MOSFET [30V N-Channel MOSFET]
分类和应用:
文件页数/大小: 6 页 / 2580 K
品牌: WHXPCB [ shenzhen wanhexing Electronics Co.,Ltd ]
 浏览型号AO4406A的Datasheet PDF文件第1页浏览型号AO4406A的Datasheet PDF文件第2页浏览型号AO4406A的Datasheet PDF文件第4页浏览型号AO4406A的Datasheet PDF文件第5页浏览型号AO4406A的Datasheet PDF文件第6页  
AO4406A
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
7V
4.5V
60
I
D
(A)
I
D
(A)
4V
40
10
20
3.5V
5
V
GS
=3V
0
1
2
3
4
5
0
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
25°C
125°C
15
20
6V
5V
30
V
DS
=5V
25
0
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
18
16
R
DS(ON)
(mΩ)
14
12
10
8
6
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
V
GS
=10V
V
GS
=4.5V
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
V
GS
=10V
I
D
=12A
I
D
=10A
17
5
2
V
GS
=4.5V
10
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
30
I
D
=12A
25
20
R
DS(ON)
(mΩ)
15
10
25°C
5
0
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
1.0E+02
1.0E+01
1.0E+00
125°C
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125
°
C
40
Rev 2: Nov. 2011
www.aosmd.com
Page 3 of 6