ZXMN3AM832
TYPICAL CHARACTERISTICS
3.5
Max Power Dissipation (W)
I
D
Drain Current (A)
V
CE(SAT)
R
DS(ON)
10
Limited
Limited
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1oz Cu
Note (d)(f)
2oz Cu
Note (e)(g)
2oz Cu
Note (a)(f)
1oz Cu
Note (d)(g)
1
DC
1s
100ms
Note (a)(f)
10ms 1ms
100us
100m
10m
Single Pulse, T
amb
=25°C
1
10
25
50
75
100
125
150
V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
80
60
D=0.5
Note (a)(f)
Derating Curve
225
200
175
150
125
100
75
50
25
0
0.1
1oz copper
Note (f)
1oz copper
Note (g)
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
2oz copper
Note (f)
2oz copper
Note (g)
0
100µ
1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
3.0
T
j max
=150°C
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1
1oz copper
Note (f)
1oz copper
Note (g)
T
amb
=25°C
2oz copper
Note (g)
Thermal Resistance v Board Area
P
D
Dissipation (W)
Continuous
2oz copper
Note (f)
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 1 - OCTOBER 2005
3
ZETEX [ ZETEX SEMICONDUCTORS ]
