ZXMN3AM832
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
1
0.106
3.5
0.12
0.18
30
0.5
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2.0A
V
DS
=4.5V,I
D
=2.5A
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
Static Drain-Source On-State Resistance R
DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs.
Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
V
SD
t
rr
Q
rr
190
38
20
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
1.7
2.3
6.6
2.9
2.3
3.9
0.6
0.9
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=15V,V
GS
=10V,
I
D
=2.5A
V
DS
=15V,V
GS
=5V,
I
D
=2.5A
V
DD
=15V, I
D
=2.5A
R
G
=6.0Ω, V
GS
=10V
0.84
17.7
13.0
0.95
V
ns
nC
T
J
=25°C, I
S
=1.7A,
V
GS
=0V
T
J
=25°C, I
F
=2.5A,
di/dt= 100A/µs
ISSUE 1 - OCTOBER 2005
4
ZETEX [ ZETEX SEMICONDUCTORS ]
