ZXTP25020CFH
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
Min.
-25
-20
-7
-7
-7
Typ.
-50
-35
-8.2
-8.0
-8.8
<-1
<-1
-43
-70
-120
-150
Base-emitter saturation
voltage
Base-emitter turn-on voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
200
150
85
-930
-810
350
250
140
40
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
OBO
t
d
t
r
t
s
t
f
285
32.4
38.4
49.2
168
55
300 s; duty cycle
2%.
Max.
Unit Conditions
V
V
V
V
V
I
C
= -100 A
I
C
= -10mA
(*)
I
E
= -100 A
I
E
= -100 A
R
BC
< 10k
or 0.25 < V
BC
< -0.25V
I
E
= -100 A
V
CB
= -20V
V
CB
= -20V, T
amb
= 100°C
V
EB
= -5.6V
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -20mA
I
C
= -2A, I
B
= -40mA
I
C
= -4A, I
B
= -200mA
I
C
= -4A, I
B
= -200mA
I
C
= -4A, V
CE
= -2V
I
C
= -10mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -4A, V
CE
= -2V
I
C
= -10A, V
CE
= -2V
MHz I
C
= -50mA, V
CE
= -10V
f = 100MHz
Emitter-collector breakdown BV
ECX
voltage (reverse blocking)
Emitter-collector breakdown BV
ECO
voltage (base open)
Collector-base cut-off
current
I
CBO
-50
-20
-50
-55
-100
-170
-210
-1050
-900
500
nA
A
nA
mV
mV
mV
mV
mV
mV
Emitter-base cut-off current I
EBO
Collector-emitter saturation
voltage
V
CE(sat)
40
pF
ns
ns
ns
ns
V
CB
= -10V, f = 1MHz
V
CC
= -15V.
I
C
= -750mA,
I
B1
= I
B2
= -15mA
NOTES:
(*) Measured under pulsed conditions. Pulse width
© Zetex Semiconductors plc 2006
ZETEX [ ZETEX SEMICONDUCTORS ]
