AO4405芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

当前位置：IC37首页_>A字母起始型号索引_>A字母起始型号索引第608页更新时间：2024-12-04 17:17:48

产品型号AO4405的概述

芯片AO4405的概述 AO4405是一款广泛应用于电源管理和开关电源、电机驱动等领域的N沟道增强型场效应晶体管（MOSFET）。属于AOI Semiconductor公司出品的产品系列，AO4405凭借其优秀的性能参数和高性价比，逐渐在电子工程师中获得了广泛关注。MOSFET作为一种具有高输入阻抗、快速开关特性和较低导通电阻的电子元器件，适用于需要高效率和低功耗的应用场合。芯片AO4405的详细参数 AO4405是一款具有比较高电流承载能力和开关速度的MOSFET。以下是该芯片的一些关键参数： 1. 最大漏极-源极电压（V_DS）：40V 2. 最大源极-漏极电流（I_D）：24A（在特定的散热条件下，实际值可能受限） 3. 导通电阻（R_DS(on)）：在V_GS=10V时，R_DS(on) < 0.025Ω 4. 栅极-源极电压（V_GS）：±20V 5. 通道类型：N沟道 6...

产品型号AO4405的Datasheet PDF文件预览

Rev 3: Nov 2004

AO4405, AO4405L ( Green Product )

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4405 uses advanced trench technology to

provide excellent R_DS(ON)with low gate charge. This

device is suitable for use as a load switch or in PWM

applications. AO4405L( Green Product ) is offered in

a lead-free package.

V_DS(V) = -30V

I_D= -6.0A

R_DS(ON)< 50mΩ (V_GS= -10V)

R_DS(ON)< 85mΩ (V_GS= -4.5V)

SOIC-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±20

T_A=25°C

T_A=70°C

-6.0

I_D

-5.1

Pulsed Drain Current ^B

I_DM

-30

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

2.1

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

AO4405, AO4405L

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=-250µA, V_GS=0V

-30

V_DS=-24V, V_GS=0V

-1

-5

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

_DS=0V, V_GS=±20V

_DS=V_GSI_D=-250µA

_GS=-10V, V_DS=-5V

_GS=-10V, I_D=6A

±100

-3

V_GS(th)

I_D(ON)

-1

-1.8

-30

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

V_GS=-4.5V, I_D=-4A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

V_DS=-5V, I_D=-6A

I_S=-1A,V_GS=0V

9.5

-0.78

-1

Maximum Body-Diode Continuous Current

-4.2

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

700

112

840

Ω

_GS=0V, V_DS=-15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

_GS=0V, V_DS=0V, f=1MHz

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

14.7

7.6

Q_g(4.5V)

V_GS=-10V, V_DS=-15V, I_D=-6A

Q_gs

Q_gd

t_D(on)

t_r

3.8

8.6

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

V_GS=-10V, V_DS=-15V, R_L=2.5Ω,

R_GEN=3Ω

t_D(off)

t_f

28.2

13.5

t_rr

I_F=-6A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

14.7

A: The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R_θJAis the sum of the thermal impedence from junction to lead R_θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The SOA

curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4405, AO4405L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-10V

-5V

-6V

-4.5V

V_DS=-5V

-4V

-3.5V

125°C

V_GS=-3V

25°C

-2.5V

4.00

0.00

1.00

2.00

3.00

5.00

-V_GS(Volts)

-V_DS(Volts)

Figure 1: On-Region Characteristics

Figure 2: Transfer Characteristics

100

1.6

1.4

1.2

V_GS=-10V

V_GS=-4.5V

V_GS=-10V

I_D=-5A

0.8

100

125

150

175

-I_D(A)

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

160

1E+01

1E+00

1E-01

1E-02

1E-03

140

120

100

I_D=-5A

125°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

25°C

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

1E-04

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILIT2Y5°WCITHOUT NOTICE.

1E-05

1E-06

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-V_SD(Volts)

-V_GS(Volts)

Figure 6: Body-Diode Characteristics

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO4405, AO4405L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1200

V_DS=-15V

I_D=-6A

1000

800

600

400

200

C_iss

C_oss

C_rss

-Q_g(nC)

Figure 7: Gate-Charge Characteristics

-V_DS(Volts)

Figure 8: Capacitance Characteristics

100

T_J(Max)=150°C

T_A=25°C

10µs

R_DS(ON)

limited

100µs

1ms

0.1s

10ms

10s

0.1

0.001

0.01

0.1

100

1000

0.1

100

Pulse Width (s)

-V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=40°C/W

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

P_D

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

0.1

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

T_on

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4405相关文章

配单直通车

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

AO4405产品参数

型号:	AO4405
生命周期：	Not Recommended
IHS 制造商：	ALPHA & OMEGA SEMICONDUCTOR LTD
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	5.02
Is Samacsys：	N
Base Number Matches：	1

电子百科

产品导航

产品型号AO4405的概述

产品型号AO4405的Datasheet PDF文件预览

AO4405相关产品

AO4405相关文章

IC37:专业IC行业平台