AO8814芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号AO8814的概述

芯片AO8814的概述 AO8814是一种广泛应用于电源管理和电流控制领域的功率MOSFET驱动芯片，具有高效率、低功耗等显著特点。它专为高频、高效率的开关电源设计，常被应用于DC-DC变换器、电池充电器和其他各类电源管理系统中。由于其优异的性能，AO8814在现代电子产品中得到了许多电子工程师的青睐，成为提升电源转换效率的重要组件。芯片AO8814的详细参数 AO8814的关键技术参数包括： - 输入电压范围：AO8814的工作输入电压范围通常在4.5V到30V之间，能够满足多种电源系统的需求。 - 输出电流：该芯片的最大输出电流可达4A，可以在高负载情况下稳定工作。 - 开关频率：AO8814的开关频率可高达1MHz，适合高效的开关电源设计。 - 导通电阻：其导通电阻（RDS(on)）在低压下小于10mΩ，有效降低了开关损耗。 - 工作温度范围：芯片的工作温度范围为-40°C至+...

产品型号AO8814的Datasheet PDF文件预览

AO8814

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8814 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. It is ESD protected.

This device is suitable for use as a uni-directional or

bi-directional load switch, facilitated by its common-

drain configuration. Standard Product AO8814is Pb-

free (meets ROHS & Sony 259 specifications).

AO8814L is a Green Product ordering option.

AO8814 and AO8814L are electrically identical.

V_DS(V) = 20V

I_D= 7.5 A (V_GS= 10V)

R_DS(ON)< 16mΩ (V_GS= 10V)

R_DS(ON)< 18mΩ (V_GS= 4.5V)

R_DS(ON)< 24mΩ (V_GS= 2.5V)

R_DS(ON)< 34mΩ (V_GS= 1.8V)

ESD Rating: 2500V HBM

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

7.5

T_A=25°C

T_A=70°C

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

P_D

Power Dissipation ^A

0.96

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

120

R_θJL

Alpha & Omega Semiconductor, Ltd.

AO8814

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=250µA, V_GS=0V

_DS=16V, V_GS=0V

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate-Source Breakdown Voltage

Gate Threshold Voltage

V_DS=0V, V_GS=±10V

BV_GSO

V_GS(th)

I_D(ON)

V_DS=0V, I_G=±250uA

±12

0.5

V_DS=V_GSI_D=250µA

0.71

On state drain current

_GS=4.5V, V_DS=5V

_GS=10V, I_D=7.5A

mΩ

T_J=125°C

mΩ

R_DS(ON)

Static Drain-Source On-Resistance

V_GS=4.5V, I_D=7A

_GS=2.5V, I_D=6A

V_GS=1.8V, I_D=5A

V_DS=5V, I_D=7.5A

I_S=1A,V_GS=0V

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

0.74

Maximum Body-Diode Continuous Current

2.5

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

1390

190

150

1.5

Ω

V_GS=0V, V_DS=10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

SWITCHING PARAMETERS

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

15.4

1.4

_GS=4.5V, V_DS=10V, I_D=7.5A

6.2

V_GS=5V, V_DS=10V, R_L=1.3Ω,

_GEN=3Ω

t_D(off)

t_f

40.5

t_rr

I_F=7.5A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

5.1

A: The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.

The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R_θJAis the sum of the thermal impedence from junction to lead R_θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The

SOA curve provides a single pulse rating.

Rev 2: June 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO8814

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10V

V_DS=5V

V_GS=2V

125°C

1.0

V_GS=1.5V

25°C

1.5

0.0

0.5

2.0

2.5

_DS(Volts)

_GS(Volts)

Figure 2: Transfer Characteristics

Figure 1: On-Regions Characteristics

1.6

1.4

1.2

1.0

0.8

V_GS=2.5V

I_D=6A

V_GS=4.5V

V_GS=1.8V

V_GS=2.5V

V_GS=4.5V

I_D=7A

V_GS=1.8V

I_D=5A

V_GS=10V

I_D=7.5A

_GS=10V

I_D(A)

100

125

150

175

Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

Figure 4: On-Resistance vs. Junction

Temperature

1E+01

1E+00

1E-01

1E-02

1E-03

1E-04

1E-05

I_D=7.5A

125°C

25°C

0.0

0.2

0.4

V_SD(Volts)

Figure 6: Body-Diode Characteristics

0.6

0.8

1.0

V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO8814

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2000

V_DS=10V

C_iss

I_D=7.5A

1600

1200

800

400

C_rss

C_oss

_DS(Volts)

Qg (nC)

Figure 8: Capacitance Characteristics

Figure 7: Gate-Charge Characteristics

100.0

10.0

1.0

T_J(Max)=150°C

T_A=25°C

R_DS(ON)

limited

10µs

100µs

1ms

0.1s

10ms

10s

0.1

0.001

0.01

0.1

100

1000

0.1

100

Pulse Width (s)

V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=83°C/W

0.1

P_D

T_on

0.01

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO8814相关文章

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AO8814产品参数

型号:	AO8814
生命周期：	Active
IHS 制造商：	ALPHA & OMEGA SEMICONDUCTOR LTD
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	2.16

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