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产品型号BAT85的概述

芯片BAT85概述 BAT85是一款广泛应用于电子电路中的肖特基二极管，其具有快速的开关性能和低正向压降特性。此型芯片主要用于小信号处理、开关电源、整流等各种应用。由于其性能卓越，因此在现代电子设计中占有重要地位。肖特基二极管的工作原理与传统的PN结构二极管存在显著差异。BAT85采用金属-半导体接触结构，利用其低正向压降的特性，使得它在低电压、低功耗的应用中优势明显。特别是在高频应用中，BAT85能够有效降低切换损耗，赢得广泛青睐。芯片BAT85的详细参数 BAT85的技术参数可以从以下几个方面进行详细描述： 1. 正向电流（IF）: 最大额定值一般为200 mA，这意味着在正常工作条件下，BAT85可以安全地承受高达这个值的电流。 2. 正向压降（VF）: 在IF = 10 mA时，VF通常为0.3 V。这个低压降特性使得该二极管在高频电路和电源管理中表现出色。 3. 反...

产品型号BAT85的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D050

BAT85

Schottky barrier diode

1996 Mar 20

Product speciﬁcation

Supersedes data of February 1992

Philips Semiconductors

Product speciﬁcation

Schottky barrier diode

BAT85

FEATURES

DESCRIPTION

• Low forward voltage

• Guard ring protected

Planar Schottky barrier diode with an integrated protection ring against static

discharges, encapsulated in a hermetically-sealed subminiature SOD68

(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.

• Hermetically-sealed leaded glass

package.

APPLICATIONS

handbook, halfpage

• Ultra high-speed switching

• Voltage clamping

MAM193

• Protection circuits

• Blocking diodes.

Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

continuous reverse voltage

continuous forward current

average forward current

CONDITIONS

MIN.

MAX.

UNIT

V_R

−

I_F

200

I_F(AV)

PCB mounting, lead length = 4 mm;

V_RWM= 25 V; a = 1.57; δ = 0.5;

T_amb= 50 °C; see Fig.2

I_FRM

I_FSM

T_stg

T_j

repetitive peak forward current

non-repetitive peak forward current

storage temperature

t_p≤ 1 s; δ 0.5

t_p≤ 10 ms

300

−

+150

125

+125

°C

−65

−

junction temperature

T_amb

operating ambient temperature

−65

1996 Mar 20

Philips Semiconductors

Product speciﬁcation

Schottky barrier diode

BAT85

ELECTRICAL CHARACTERISTICS

_amb= 25 °C unless otherwise speciﬁed.

SYMBOL PARAMETER

forward voltage

CONDITIONS

MAX.

UNIT

V_F

see Fig.3

I_F= 0.1 mA

I_F= 1 mA

240

320

400

500

800

µA

I_F= 10 mA

I_F= 30 mA

I_F= 100 mA

V_R= 25 V; see Fig.4

I_R

t_rr

reverse current

reverse recovery time

when switched from I_F= 10 mA to

I_R= 10 mA; R_L= 100 Ω;

measured at I_R= 1 mA; see Fig.6

C_d

diode capacitance

f = 1 MHz; V_R= 1 V; see Fig.5

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

thermal resistance from junction to ambient note 1

CONDITIONS

VALUE

320

UNIT

K/W

R_{th j-a}

Note

1. Refer to SOD68 standard mounting conditions.

1996 Mar 20

Philips Semiconductors

Product speciﬁcation

Schottky barrier diode

BAT85

GRAPHICAL DATA

MSA892

MRA540

250

handbook, halfpage

F(AV)

(1) (2) (3)

(mA)

200

(mA)

150

100

(1)

(2) (3)

100

150

0.4

0.8

1.2

(V)

( C)

amb

(1) T_amb= 125 °C.

(2) T_amb= 85 °C.

(3) T_amb= 25 °C.

Fig.3 Forward current as a function of forward

voltage; typical values.

Fig.2 Derating curve.

MGC681

MGC682

handbook, halfpage

(nA)

(1)

(2)

(pF)

(3)

−1

(V)

(1) T_amb= 85 °C.

(2) T_amb= 25 °C.

(3) T_amb= −40 °C.

f = 1 MHz.

Fig.4 Reverse current as a function of reverse

voltage; typical values.

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

1996 Mar 20

Philips Semiconductors

Product speciﬁcation

Schottky barrier diode

BAT85

andbook, halfpage

10%

90%

MRC129 - 1

Fig.6 Reverse recovery definitions.

1996 Mar 20

Philips Semiconductors

Product speciﬁcation

Schottky barrier diode

BAT85

PACKAGE OUTLINE

handbook, full pagewidth

0.55

max

1.6

max

3.04

max

25.4 min

MSA212 - 1

Dimensions in mm.

Cathode indicated by a coloured band.

The diodes are type branded.

Fig.7 SOD68; (DO-34).

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Mar 20

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BAT85产品参数

型号:	BAT85
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	DO-35
Reach Compliance Code：	unknown
配置：	SINGLE
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.24 V
最大非重复峰值正向电流：	0.6 A
元件数量：	1
最高工作温度：	125 °C
最大重复峰值反向电压：	30 V
最大反向恢复时间：	0.005 µs
子类别：	Rectifier Diodes
表面贴装：	NO
技术：	SCHOTTKY
Base Number Matches：	1
类别：	Diodes
VRRM (V) max：	30
IF (A) max：	0.2
VF (V) max：	0.4
Condition1_IF (A)：	0.01
IFSM (A) max：	5
IR (uA) max：	2
Condition2_VR (V)：	25
trr (ns) max：	5
AEC Qualified：	200
最高工作温度：	Yes
最低工作温度：	125
MSL等级：	-55
生命周期：	Active
是否无铅：	Yes
符合Reach：	Yes
符合RoHS：	Yes
ECCN代码：	EAR99
Package Outlines：	DO-35

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