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    • 北京元坤伟业科技有限公司

           该会员已使用本站17年以上

    • DE375-102N10A
    • 数量-
    • 厂家-
    • 封装-
    • 批号-
    • -
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    产品型号DE375-102N10A的Datasheet PDF文件预览

    DE375-102N10A  
    RF Power MOSFET  
    N-Channel Enhancement Mode  
    Low Qg and Rg  
    VDSS  
    ID25  
    RDS(on)  
    = 1000 V  
    High dv/dt  
    =
    =
    =
    10 A  
    1.2 Ω  
    940 W  
    Nanosecond Switching  
    Symbol  
    Test Conditions  
    TJ = 25°C to 150°C  
    TJ = 25°C to 150°C; RGS = 1 MΩ  
    Continuous  
    Maximum Ratings  
    PDC  
    1000  
    1000  
    ±20  
    ±30  
    10  
    V
    V
    VDSS  
    VDGR  
    VGS  
    VGSM  
    ID25  
    V
    Transient  
    V
    Tc = 25°C  
    A
    Tc = 25°C, pulse width limited by TJM  
    60  
    A
    IDM  
    Tc = 25°C  
    Tc = 25°C  
    10  
    A
    IAR  
    30  
    mJ  
    V/ns  
    EAR  
    I
    S ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,  
    5
    Tj ≤ 150°C, RG = 0.2Ω  
    dv/dt  
    IS = 0  
    >200 V/ns  
    DRAIN  
    940  
    425  
    W
    W
    PDC  
    PDHS  
    GATE  
    Tc = 25°C  
    Derate 4.4W/°C above 25°C  
    Tc = 25°C  
    4.5  
    W
    PDAMB  
    RthJC  
    0.16 C/W  
    0.23 C/W  
    SG1 SG2  
    SD1  
    SD2  
    RthJHS  
    Features  
    • Isolated Substrate  
    Symbol  
    Test Conditions  
    Characteristic Values  
    TJ = 25°C unless otherwise specified  
    −
    −
    −
    high isolation voltage (>2500V)  
    excellent thermal transfer  
    min.  
    1000  
    2.5  
    typ.  
    max.  
    Increased temperature and power  
    VGS = 0 V, ID = 3 ma  
    VDS = VGS, ID = 4 ma  
    VGS = ±20 VDC, VDS = 0  
    VDS = 0.8 VDSS TJ = 25°C  
    cycling capability  
    V
    V
    VDSS  
    VGS(th)  
    IGSS  
    • IXYS advanced low Qg process  
    • Low gate charge and capacitances  
    5.5  
    −
    −
    easier to drive  
    faster switching  
    ±100 nA  
    50  
    IDSS  
    µA  
    • Low RDS(on)  
    • Very low insertion inductance (<2nH)  
    V
    GS = 0  
    TJ = 125°C  
    1
    mA  
    VGS = 15 V, ID = 0.5ID25  
    • No beryllium oxide (BeO) or other  
    1.2  
    RDS(on)  
    Ω
    Pulse test, t ≤ 300µS, duty cycle d ≤ 2%  
    hazardous materials  
    VDS = 15 V, ID = 0.5ID25, pulse test  
    Advantages  
    6
    18  
    S
    gfs  
    • Optimized for RF and high speed  
    -55  
    +150 °C  
    TJ  
    switching at frequencies to 50MHz  
    • Easy to mount—no insulators needed  
    • High power density  
    150  
    °C  
    TJM  
    Tstg  
    TL  
    -55  
    +150 °C  
    1.6mm (0.063 in) from case for 10 s  
    300  
    3
    °C  
    g
    Weight  
    DE375-102N10A  
    RF Power MOSFET  
    Symbol  
    Test Conditions  
    Characteristic Values  
    (TJ = 25°C unless otherwise specified)  
    min.  
    typ.  
    0.3  
    max.  
    RG  
    Ω
    2900  
    100  
    pF  
    pF  
    Ciss  
    Coss  
    VGS = 0 V, VDS = 0.8 VDSS(max)  
    ,
    f = 1 MHz  
    25  
    33  
    5
    pF  
    pF  
    ns  
    ns  
    ns  
    ns  
    nC  
    nC  
    Crss  
    Back Metal to any Pin  
    Cstray  
    Td(on)  
    Ton  
    Td(off)  
    Toff  
    VGS = 15 V, VDS = 0.8 VDSS  
    ID = 0.5 IDM  
    3
    RG = 0.2 Ω (External)  
    5
    8
    90  
    30  
    Qg(on)  
    Qgs  
    VGS = 10 V, VDS = 0.5 VDSS  
    ID = 0.5 ID25  
    40  
    nC  
    Qgd  
    Source-Drain Diode -  
    Characteristic Values  
    (TJ = 25°C unless otherwise specified)  
    Symbol  
    IS  
    Test Conditions  
    VGS = 0 V  
    min.  
    typ.  
    max.  
    10  
    A
    A
    V
    Repetitive; pulse width limited by TJM  
    80  
    ISM  
    IF = IS, VGS = 0 V,  
    1.5  
    VSD  
    Pulse test, t ≤ 300 µs, duty cycle ≤ 2%  
    200  
    0.6  
    ns  
    Trr  
    QRM  
    IF = IS, -di/dt = 100A/µs,  
    µC  
    VR = 100V  
    7
    A
    IRM  
    (1) These parameters apply to the package, not individual MOSFET devices.  
    For detailed device mounting and installation instructions, see the “DE-  
    Series MOSFET Mounting Instructions” technical note on IXYS RF’s web  
    site at www.ixysrf.com/Technical_Support/App_notes.html  
    IXYS RF reserves the right to change limits, test conditions and dimensions.  
    IXYS RF MOSFETS are covered by one or more of the following U.S. patents:  
    4,835,592  
    5,034,796  
    5,381,025  
    4,850,072  
    5,049,961  
    5,640,045  
    4,881,106  
    5,063,307  
    4,891,686  
    5,187,117  
    4,931,844  
    5,237,481  
    5,017,508  
    5,486,715  
    DE375-102N10A  
    RF Power MOSFET  
    102N10A DE-SERIES SPICE Model  
    The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-  
    sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms  
    LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term.  
    The output capacitance, COSS, and reverse transfer capacitance, CRSS are mod-  
    eled with reversed biased diodes. This provides a varactor type response nec-  
    essary for a high power device model. The turn on delay and the turn off delay  
    are adjusted via Ron and Roff.  
    Figure 1 DE-SERIES SPICE Model  
    This SPICE model may be downloaded as a text file from the DEI web site at  
    www.directedenergy.com/spice.htm  
    Net List:  
    .SUBCKT 102N10A 10 20 30  
    * TERMINALS: D G S  
    * 1000 Volt 10 Amp 1.2 ohm N-Channel Power MOSFET  
    * REV.A 05-23-00  
    M1 1 2 3 3 DMOS L=1U W=1U  
    RON 5 6 0.5  
    DON 6 2 D1  
    ROF 5 7 .1  
    DOF 2 7 D1  
    D1CRS 2 8 D2  
    D2CRS 1 8 D2  
    CGS 2 3 3.0N  
    RD 4 1 1.5  
    Doc #9200-0223 Rev 6  
    © 2003 IXYS RF  
    DCOS 3 1 D3  
    RDS 1 3 5.0MEG  
    LS 3 30 .5N  
    LD 10 4 1N  
    LG 20 5 1N  
    .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)  
    .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)  
    .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)  
    .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)  
    .ENDS  
    An  
    IXYS Company  
    2401 Research Blvd., Suite 108  
    Fort Collins, CO USA 80526  
    970-493-1901 Fax: 970-493-1903  
    Email: deiinfo@directedenergy.com  
    Web: http://www.directedenergy.com  
    配单直通车
    DE375-102N10A产品参数
    型号:DE375-102N10A
    是否无铅： 不含铅
    是否Rohs认证： 符合
    生命周期：Obsolete
    包装说明：,
    Reach Compliance Code：compliant
    风险等级：5.76
    最高频带：VERY HIGH FREQUENCY BAND
    峰值回流温度（摄氏度）：NOT SPECIFIED
    认证状态：Not Qualified
    子类别：FET General Purpose Power
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    Base Number Matches：1
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