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产品型号DMG4496SSS-13的概述

DMG4496SSS-13 芯片概述 DMG4496SSS-13是一款N沟道功率MOSFET（场效应晶体管】，其设计旨在满足高效能的开关和线性应用。这款MOSFET的应用领域广泛，包括电源管理、DC-DC转换器、开关电源、马达驱动等场合。DMG4496SSS-13具有较低的导通电阻和高的耐压能力，能够提供良好的性能表现，使其在多种应用中具备竞争力。 DMG4496SSS-13的详细参数 DMG4496SSS-13的主要技术参数如下： - 类型：N沟道MOSFET - 最大漏极源极电压（V_DS）：60V - 最大漏极电流（I_D）：45A - R_DS(on)：最大21mΩ（在V_GS = 10V下） - 输入电容（C_iss）：约6800pF - 输出电容（C_oss）：约1350pF - 反向传输电容（C_rss）：约120pF - 最大功耗（P_D）：约94W（在25°C环境温度...

产品型号DMG4496SSS-13的Datasheet PDF文件预览

DMG4496SSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Marking Information: See Page 4

•

Ordering Information: See Page 4

Weight: 0.072 grams (approximate)

SO-8

TOP VIEW

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-Source Voltage

±25

T_A= 25°C

T_A= 85°C

Steady

State

Continuous Drain Current (Note 3)

I_D

Pulsed Drain Current (Note 4)

I_DM

I_AR

Avalanche Current (Notes 4 & 5)

Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH

3.2

E_AR

Thermal Characteristics

Characteristic

Symbol

P_D

Value

1.42

Unit

Power Dissipation (Note 3)

Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)

Operating and Storage Temperature Range

88.49

°C/W

°C

R_θJA

-55 to +150

T_J, T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on 1 in.²FR-4 board with 2oz. Copper, in a still air environment @ T_A= 25°C. The value in any given application depends on the

user's specific board design.

4. Repetitive rating, pulse width limited by junction temperature.

5. I_ARand E_ARrating are based on low frequency and duty cycles to keep T_J= 25°C

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www.diodes.com

April 2010

DMG4496SSS

Document number: DS32048 Rev. 3 - 2

DMG4496SSS

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

Zero Gate Voltage Drain Current

Gate-Source Leakage

μA

V_DS= 30V, V_GS= 0V

V_GS= ±25V, V_DS= 0V

±100

I_GSS

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.8

1.2

2.0

V_GS(th)

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 10A

V_GS= 4.5V, I_D= 7.5A

V_DS= 5V, I_D= 10A

V_GS= 0V, I_S= 1A

21.5

mΩ

Static Drain-Source On-Resistance

R_{DS (ON)}

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

11.7

0.70

|Y_fs|

V_SD

493.5

94.5

50.4

2.86

4.7

C_iss

C_oss

C_rss

R_g

_DS=15V, V_GS= 0V,

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Gate Resistance

V_DS=0V, V_GS= 0V, f = 1MHz

Total Gate Charge (V_GS= 4.5V)

Total Gate Charge (V_GS= 10V)

Gate-Source Charge

Q_g

_DS= 15V, V_GS= 4.5V, ID =10A

10.2

1.4

Q_g

Q_gs

Q_gd

t_D(on)

t_r

V_DS= 15V, V_GS= 10V, ID =10A

Gate-Drain Charge

1.7

Turn-On Delay Time

4.76

3.64

19.5

4.9

Turn-On Rise Time

_GS= 10V, V_Ds= 15V,

Turn-Off Delay Time

R_G= 6Ω, R_L= 15Ω,

t_D(off)

t_f

Turn-Off Fall Time

Notes:

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

= 10V

= 5V

= 4.5V

= 4.0V

= 3.5V

= 150°C

= 125°C

= 85°C

= 3.0V

= 25°C

= 2.5V

= -55°C

0.5

1.5

2.5

3.5

0.5

1.5

2.5

3.5

4.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristic

Fig. 1 Typical Output Characteristic

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April 2010

DMG4496SSS

Document number: DS32048 Rev. 3 - 2

DMG4496SSS

0.04

0.03

0.05

0.04

= 10V

= 150°C

= 125°C

= 3.5V

0.03

0.02

= 85°C

0.02

= 4.5V

= 25°C

= 10V

= -55°C

0.01

I_D, DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

I_D, DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.7

1.5

0.06

0.05

0.04

= 4.5V

= 5A

= 10V

1.3

1.1

= 10A

= 4.5V

= 5A

0.03

0.02

0.9

= 10V

= 10A

0.01

0.7

0.5

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_A, AMBIENT TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

Fig. 6 On-Resistance Variation with Temperature

2.0

1.8

1.6

1.4

1.2

1.0

= 25°C

= 1mA

= 250µA

0.8

0.6

-50 -25

75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

V_SD, SOURCE-DRAIN VOLTAGE (V)

T_A, AMBIENT TEMPERATURE (°C)

Fig. 8 Diode Forward Voltage vs. Current

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

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April 2010

DMG4496SSS

Document number: DS32048 Rev. 3 - 2

DMG4496SSS

10,000

1,000

100

f = 1MHz

iss

= 150°C

= 125°C

oss

100

rss

= 85°C

= 25°C

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Leakage Current

vs. Drain-Source Voltage

Fig. 9 Typical Total Capacitance

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

(t) = r(t) * R

θJA

= 90°C/W

θJA

0.01

P(pk)

D = 0.01

D = 0.005

- T = P * R (t)

A θJA

Duty Cycle, D = t /t

D = Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 11 Transient Thermal Response

Ordering Information (Note 8)

Part Number

DMG4496SSS-13

Case

SO-8

Packaging

2500 / Tape & Reel

Notes:

8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Top View

Logo

G4496SS

YY WW

Part no.

Week: 01 ~ 53

Year: “09” = 2009

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www.diodes.com

April 2010

DMG4496SSS

Document number: DS32048 Rev. 3 - 2

DMG4496SSS

Package Outline Dimensions

SO-8

Min

0.10

1.30

0.15

0.3

4.85

5.90

3.85

1.27 Typ

0.62

0°

Dim

Max

1.75

0.20

1.50

0.25

0.5

4.95

6.10

3.95

Gauge Plane

Seating Plane

Detail ‘A’

7°~9°

Detail ‘A’

0.35

0.82

8°

All Dimensions in mm

Suggested Pad Layout

Dimensions Value (in mm)

0.60

1.55

5.4

1.27

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www.diodes.com

April 2010

DMG4496SSS

Document number: DS32048 Rev. 3 - 2

DMG4496SSS

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

6 of 6

www.diodes.com

April 2010

DMG4496SSS

Document number: DS32048 Rev. 3 - 2

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DMG4496SSSQ-13产品参数

型号:	DMG4496SSSQ-13
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.72
其他特性：	HIGH RELIABILITY
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	10 A
最大漏极电流 (ID)：	10 A
最大漏源导通电阻：	0.0215 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.42 W
最大脉冲漏极电流 (IDM)：	60 A
参考标准：	AEC-Q101
子类别：	FET General Purpose Powers
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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