FDD8444现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDD8444的概述

FDD8444概述 FDD8444是一款高效的N沟道MOSFET，专为各种电子设备和电源管理应用设计。该器件的主要特点在于其出色的导通性能与快速的开关特性，使其在高频、高电流的工作环境中表现出色。随着现代电子设备对高效和高性能的需求不断提高，FDD8444作为一种重要的功率开关器件，得到了越来越广泛的应用。该芯片被广泛应用于电源转换器、电动机驱动、电池管理系统和各种工业自动化设备中。FDD8444的设计适应了一系列严苛的工作环境，能够在高温、高电流的条件下稳定工作。为了适应不同的应用需求，FDD8444具有多种封装形式和参数选项，用户可以根据具体需要选择合适的版本。 CPU FDD8444的详细参数 FDD8444芯片的主要电气参数如下： 1. 管身电压 (V_DS): 30V 2. 门源电压 (V_GS): ±20V 3. 持续漏极电流 (I_D): 46A（在Tj=25℃时） 4...

产品型号FDD8444的Datasheet PDF文件预览

November 2006

FDD8444

N-Channel PowerTrench MOSFET

40V, 50A, 5.2mΩ

Features

Applications

Automotive Engine Control

Powertrain Management

Solenoid and Motor Drivers

Electronic Transmission

Typ r_DS(on)= 4mΩ at V_GS= 10V, I_D= 50A

Typ Q_g(10)= 89nC at V_GS= 10V

Low Miller Charge

Low Q_rrBody Diode

Distributed Power Architecture and VRMs

Primary Switch for 12V Systems

UIS Capability (Single Pulse/ Repetitive Pulse)

Qualified to AEC Q101

RoHS Compliant

www.fairchildsemi.com

FDD8444 Rev B (W)

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

V_GS

±20

Drain Current Continuous (V_GS= 10V)

Continuous (V_GS= 10V, with R_θJA= 52^oC/W)

Pulsed

(Note 1)

(Note 2)

145

I_D

Figure 4

535

E_AS

P_D

Single Pulse Avalanche Energy

W/^oC

^oC

Power Dissipation

Derate above 25^oC

153

1.02

T_J, T_STGOperating and Storage Temperature

-55 to +175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient TO-252, 1in²copper pad area

0.98

^oC/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

2500 units

FDD8444

TO-252AA

13”

12mm

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B_VDSS

I_DSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 250µA, V_GS= 0V

_DS= 32V

µA

V_GS= 0V

T_J= 150^oC

250

±100

I_GSS

V_GS= ±20V

On Characteristics

V_GS(th)

r_DS(on)

Gate to Source Threshold Voltage

Drain to Source On Resistance

V_GS= V_DS, I_D= 250µA

2.5

I_D= 50A, V_GS= 10V

5.2

mΩ

_D= 50A, V_GS= 10V,

7.2

9.4

T_J= 175^oC

Dynamic Characteristics

C_iss

Input Capacitance

6195

585

332

1.9

Ω

V_DS= 25V, V_GS= 0V,

f = 1MHz

C_oss

C_rss

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

R_G

f = 1MHz

116

14.3

Q_g(TOT)

Q_g(5)

Q_g(TH)

Q_gs

Total Gate Charge at 10V

Total Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller“ Charge

V_GS= 0 to 10V

V_GS= 0 to 5V

V_DD= 20V

_D= 50A

I_g= 1.0mA

V_GS= 0 to 2V

Q_gs2

Q_gd

FDD8444 Rev B (W)

www.fairchildsemi.com

Electrical Characteristics T_J= 25^oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Switching Characteristics

t_on

t_d(on)

t_r

Turn-On Time

135

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Turn-Off Time

V_DD= 20V, I_D= 50A

_GS= 10V, R_GS= 2Ω

t_d(off)

t_f

t_off

Drain-Source Diode Characteristics

_SD= 50A

0.9

0.8

1.25

1.0

V_SD

Source to Drain Diode Voltage

I_SD= 25A

t_rr

Reverse Recovery Time

I_F= 50A, dI_F/dt = 100A/µs

Q_rr

Reverse Recovery Charge

Notes:

1: Package current limitation is 50A.

2: Starting T = 25 C, L = 0.67mH, I = 40A

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

FDD8444 Rev B (W)

www.fairchildsemi.com

Typical Characteristics

160

140

120

100

1.2

1.0

0.8

0.6

0.4

0.2

0.0

V_GS= 10V

CURRENT LIMITED

BY PACKAGE

100

125

150

175

100

125

150

175

T_C, CASE TEMPERATURE(^oC)

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

DUTY CYCLE - DESCENDING ORDER

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

PEAK T = P

x Z

x R

+ T

θJC

θJC C

SINGLE PULSE

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION(s)

Figure 3. Normalized Maximum Transient Thermal Impedance

2000

1000

T_C= 25^oC

FOR TEMPERATURES

ABOVE 25^oC DERATE PEAK

V_GS= 10V

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

CURRENT AS FOLLOWS:

175 - T_C

I = I₂₅

150

100

SINGLE PULSE

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDD8444 Rev B (W)

www.fairchildsemi.com

Typical Characteristics

500

100

1000

100

If R = 0

= (L)(I )/(1.3*RATED BV

- V

)

DSS

10us

If R

≠ 0

= (L/R)ln[(I *R)/(1.3*RATED BV

- V ) +1]

DSS DD

100us

STARTING T_J= 25^oC

CURRENT LIMITED

BY PACKAGE

STARTING T_J= 150^oC

1ms

OPERATION IN THIS SINGLE PULSE

AREA MAY BE

LIMITED BY r

DS(on)

10ms

= MAX RATED

= 25 C

0.1

0.01

0.1

100

1000

100

t_AV, TIME IN AVALANCHE (ms)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 5. Forward Bias Safe Operating Area

100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

V_GS= 10V

V_DD= 5V

V_GS= 5V

V_GS= 4.5V

T_J= 175^oC

T_J= 25^oC

V_GS= 4V

T_J= -55^oC

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0

0.3

0.6

0.9

1.2

1.5

V_DS, DRAIN TO SOURCE VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

1.8

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

I_D= 50A

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.6

1.4

1.2

1.0

0.8

0.6

T_J= 175^oC

T_J= 25^oC

I_D= 50A

V_GS= 10V

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE( C)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 9. Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDD8444 Rev B (W)

www.fairchildsemi.com

Typical Characteristics

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

1.15

1.10

1.05

1.00

0.95

0.90

V_GS= V_DS

I_D= 250µA

= 250µA

-80

-40

120

160

200

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE (^oC)

T_J, JUNCTION TEMPERATURE(^oC)

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

10000

ID = 50A

C_iss

V_DD= 15V

V_DD= 20V

V_DD= 25V

C_oss

1000

C_rss

f = 1MHz

V_GS= 0V

100

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE(nC)

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge vs Gate to Source Voltage

FDD8444 Rev B (W)

www.fairchildsemi.com

FAIRCHILD SEMICONDUCTOR TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT Quiet Series™

GlobalOptoisolator™

GTO™

OCX™

OCXPro™

SILENT SWITCHER^®

SMART START™

SPM™

UniFET™

UltraFET^®

VCX™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

OPTOLOGIC^®

OPTOPLANAR™

PACMAN™

POP™

HiSeC™

Stealth™

Wire™

I²C™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

TinyBoost™

TinyBuck™

TinyPWM™

TinyPower™

TinyLogic^®

TINYOPTO™

TruTranslation™

UHC^®

i-Lo™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

Power247™

PowerEdge™

PowerSaver™

PowerTrench^®

QFET^®

EcoSPARK™

E²CMOS™

EnSigna™

FACT^®

FAST^®

FASTr™

FPS™

FRFET™

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

Across the board. Around the world.™

The Power Franchise^®

ScalarPump™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS

PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS

WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I21

FDD8444 Rev B (W)

www.fairchildsemi.com

FDD8444相关文章

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FDD8444产品参数

型号:	FDD8444
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	DPAK
包装说明：	ROHS COMPLIANT, TO-252, 3 PIN
针数：	3
制造商包装代码：	TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA &AB
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.29
Is Samacsys：	N
雪崩能效等级（Eas）：	535 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	40 V
最大漏极电流 (Abs) (ID)：	17.5 A
最大漏极电流 (ID)：	155 A
最大漏源导通电阻：	5.2 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	227 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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