FDD8778现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDD8778的概述

芯片FDD8778的概述及详细参数一、引言随着电子技术的不断发展，集成电路(IC)在现代电子设备中的应用日益广泛。FDD8778是一款具有高性能的射频(RF)功率放大器芯片，在通信、数字信号处理及其他电子领域发挥着重要作用。该芯片主要应用在无人机、智能手机及其他需要高效率和小体积的设备中。二、FDD8778的概述 FDD8778是一种高功率功率放大器，主要用于频率范围广泛的无线通信及信号处理。其主要特性包括高增益、宽频带以及较低的失真，使得其在各种应用中都具备优良的性能。FDD8778的设计旨在支持多种无线通信标准，包括LTE、GSM和WCDMA。该芯片的关键设计理念是功率效率的最大化，减少功耗的同时保持高信号质量。在移动设备和基站中，FDD8778能够显著提高传输距离与质量，为用户提供更为稳定的信号连接。三、FDD8778的详细参数 FDD8778的主要参数包括： - ...

产品型号FDD8778的Datasheet PDF文件预览

May 2006

FDD8778/FDU8778

N-Channel PowerTrench^®MOSFET

25V, 35A, 14mΩ

Features

General Description

Max r_DS(on)= 14.0mΩ at V_GS= 10V, I_D= 35A

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

Max r_DS(on)= 21.0mΩ at V_GS= 4.5V, I_D= 33A

Low gate charge: Q_g(TOT)= 12.6nC(Typ), V_GS= 10V

Low gate resistance

_DS(on)and fast switching speed.

RoHS compliant

Application

DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

I-PAK

D S

Short Lead I-PAK

(TO-251AA)

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package Limited)

-Continuous (Die Limited)

-Pulsed

I_D

(Note 1)

(Note 2)

145

E_AS

Single Pulse Avalanche Energy

Power Dissipation

P_D

T_J, T_STG

Operating and Storage Temperature

-55 to 175

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case TO-252,TO-251

Thermal Resistance, Junction to Ambient TO-252,TO-251

Thermal Resistance, Junction to Ambient TO-252,1in²copper pad area

3.8

100

°C/W

Package Marking and Ordering Information

Device Marking

FDD8778

Device

FDD8778

Package

TO-252AA

TO-251AA

Reel Size

13’’

Tape Width

12mm

N/A

Quantity

2500 units

75 units

FDU8778

N/A(Tube)

FDU8778

FDU8778_F071

N/A

75 units

FDD8778/FDU8778 Rev. A

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250µA, V_GS= 0V

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= 250µA, referenced to

25°C

17.2

mV/°C

V_DS= 20V,

V_GS= 0V

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

µA

T_J= 150°C

250

±10

V_GS= ±20V

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250µA

1.2

1.5

2.5

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= 250µA, referenced to

25°C

-5.3

mV/°C

V_GS= 10V, I_D= 35A

V_GS= 4.5V, I_D= 33A

11.6

15.7

14.0

21.0

r_DS(on)

Drain to Source On Resistance

mΩ

V_GS= 10V, I_D= 35A

T_J= 175°C

18.2

23.8

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

635

160

108

1.3

845

215

162

Ω

V_DS= 13V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1MHz

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

9.4

V_DD= 13V, I_D= 35A

V_GS= 10V, R_GS= 27Ω

Turn-Off Delay Time

Fall Time

Q_g(TOT)

Q_g(5)

Q_gs

Q_gd

Total Gate Charge at 10V

Total Gate Charge at 5V

Gate to Source Gate Charge

Gate to Drain “Miller”Charge

V_GS= 0V to 10V

12.6

6.7

2.1

3.2

V_DD= 13V

V_GS= 0V to 5V

_D= 35A

I_g= 1.0mA

Drain-Source Diode Characteristics

V_GS= 0V, I_S= 35A

1.03

0.89

1.25

1.2

V_SD

Source to Drain Diode Forward Voltage

V_GS= 0V, I_S= 15A

t_rr

Reverse Recovery Time

I_F= 35A, di/dt = 100A/µs

Q_rr

Reverse Recovery Charge

Notes:

1: Pulse time < 300µs, Duty cycle = 2%.

2: Starting T = 25 C, L = 0.1mH, I = 22A ,V = 23V, V = 10V.

FDD8778/FDU8778 Rev. A

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= 3.0V

= 4.0V

V_GS= 3.5V

= 10V

= 5.0V

= 4.5V

V_GS= 4.5V

V_GS= 4V

= 3.5V

= 3V

V_GS= 5V

V_GS= 10V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

I_D, DRAIN CURRENT(A)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

Figure 2. Normalized On-Resistance vs Drain

Current and Gate Voltage

1.8

1.6

1.4

1.2

1.0

0.8

0.6

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

= 35A

= 10V

T = 175^oC

= 25^oC

7.5

-80

-40

120

160

200

3.0

4.5

6.0

9.0

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs Junction

Temperature

Figure 4. On-Resistance vs Gate to Source

Voltage

100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

= 0V

= 5V

T = 175^oC

= 25^oC

0.1

T = 175^oC

= 25^oC

0.01

= -55^oC

1.0

= - 55^oC

3.5

1E-3

1.0

1.5

2.0

2.5

3.0

4.0

4.5

5.0

0.0

0.2

0.4

0.6

0.8

1.2

1.4

V_GS, GATE TO SOURCE VOLTAGE (V)

V , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward

Voltage vs Source Current

FDD8778/FDU8778 Rev. A

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

2000

1000

f = 1MHz

= 0V

iss

oss

= 13V

= 10V

= 16V

rss

100

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source Voltage

V =10V

T_J= 25^oC

T_J= 125^oC

T_J= 150^oC

V =4.5V

θJC

= 3.8^oC/W

1E-3

100

125

150

175

0.01

0.1

100

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE(ms)

Figure 9. Unclamped Inductive Switching

Capability

Figure 10. Maximum Continuous Drain Current vs

Case Temperature

400

5000

= 25 C

V_GS= 10V

10us

FOR TEMPERATURES

100

ABOVE 25 C DERATE PEAK

1000

100

CURRENT AS FOLLOWS:

100us

175 – T

I = I

----------------------

150

LIMITED BY

PACKAGE

1ms

10ms

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

DS(on)

SINGLE PULSE

= MAX RATED

= 25^OC

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

0.1

t, PULSE WIDTH (s)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power

Dissipation

FDD8778/FDU8778 Rev. A

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

SINGLE PULSE

NOTES:

DUTY FACTOR: D = t /t

PEAK T = P

x Z

x R

+ T

θJC

θJC C

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

FDD8778/FDU8778 Rev. A

www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FAST^®

FASTr™

FPS™

FRFET™

GlobalOptoisolator™ MicroPak™

ISOPLANAR™

LittleFET™

PowerEdge™

PowerSaver™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

MICROCOUPLER™ PowerTrench^®

MicroFET™

QFET^®

QS™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

GTO™

HiSeC™

I²C™

MICROWIRE™

MSX™

MSXPro™

OCX™

QT Optoelectronics™ TCM™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

TinyLogic^®

TINYOPTO™

TruTranslation™

UHC™

i-Lo™

ImpliedDisconnect™ OCXPro™

IntelliMAX™

FACT™

FACT Quiet Series™

OPTOLOGIC^®

OPTOPLANAR™

PACMAN™

POP™

ScalarPump™

UltraFET^®

SILENT SWITCHER^®UniFET™

SMART START™

SPM™

VCX™

Wire™

Across the board. Around the world.™

The Power Franchise^®

Programmable Active Droop™

Power247™

Stealth™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,

SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I19

FDD8778/FDU8778 Rev. A

www.fairchildsemi.com

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