FDMA291P各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDMA291P的概述

FDMA291P芯片概述 FDMA291P是一款高性能的射频功率放大器（PA），主要针对无线通信系统中的应用需求而设计。该芯片通过应用于不同的射频频段，为用户提供了增强的信号覆盖和良好的功率效率。FDMA291P适用于诸如移动通信基站、卫星通信和各种无线传感器网络等领域，具有良好的稳定性和可靠性。 FDMA291P详细参数 FDMA291P芯片的主要参数包括： - 频率范围：0.5 GHz 至 2.0 GHz - 功率增益：典型值为25 dB - 输出功率：可达到30 dBm - 电源电压：正常工作范围在4.5V到12V - 线性度：在高功率下，保证良好的线性度和低的交叉调制失真 - 输入和输出阻抗：输入和输出均为50Ω - 热性能：具有良好的热稳定性，适合长时间工作环境 - 封装类型：提供多种封装选择，包括无铅封装，使其符合环保标准 - 工作温度范围：-40°C 至 +85°C 厂...

产品型号FDMA291P的Datasheet PDF文件预览

May 2006

FDMA291P

Single P-Channel 1.8V Specified PowerTrench^®MOSFET

General Description

Features

This device is designed specifically for battery charge

or load switching in cellular handset and other ultra-

portable applications. It features a MOSFET with low

on-state resistance.

• –6.6 A, –20V. r_DS(ON)= 42 mΩ @ V_GS= –4.5V

r_DS(ON)= 58 mΩ @ V_GS= –2.5V

r_DS(ON)= 98 mΩ @ V_GS= –1.8V

• Low profile – 0.8 mm maximum – in the new package

MicroFET 2x2 mm

The MicroFET 2x2 package offers exceptional thermal

performance for its physical size and is well suited to

linear mode applications.

Pin 1

Bottom Drain Contact

Drain

Source

MicroFET 2x2

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GS

Gate-Source Voltage

±8

Drain Current – Continuous

– Pulsed

(Note 1a)

–6.6

I_D

–24

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

2.4

P_D

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

R_θJA

Thermal Resistance, Junction-to-Ambient

145

R_θJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

291

FDMA291P

7’’

8mm

3000 units

FDMA291P Rev B (W)

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

–20

V_GS= 0 V,

I_D= –250 µA

∆BVDSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= –250 µA, Referenced to 25°C

mV/°C

–12

I_DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage

V_DS= –16 V, V_GS= 0 V

–1

µA

I_GSS

V_GS= ± 8 V,

V_DS= 0 V

±100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

–0.4 –0.7 –1.0

V_DS= V_GS

I_D= –250 µA

∆VGS(th)

∆T_J

Gate Threshold Voltage

Temperature Coefficient

I_D= –250 µA, Referenced to 25°C

mV/°C

r_DS(on)

Static Drain–Source

On–Resistance

V_GS= –4.5 V, I_D= –6.6 A

V_GS= –2.5 V, I_D= –5.1 A

V_GS= –1.8 V, I_D= –3.9 A

mΩ

_GS= –4.5 V, I_D= –6.6 A, T_J=125°C

g_FS

Forward Transconductance

V_DS= –5 V, I_D= –6.6 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

1000

190

_DS= –10 V, V _GS= 0 V,

Output Capacitance

f = 1.0 MHz

Reverse Transfer Capacitance

100

Switching Characteristics (Note 2)

V_DD= –10 V, I_D= –1 A,

_GS= –4.5 V, R_GEN= 6 Ω

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DS= –10 V, I_D= –6.6 A,

V_GS= –4.5 V

Q_g

Q_gs

Q_gd

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

–2

V_SD

Drain–Source Diode Forward

Voltage

V_GS= 0 V, I_S= –2 A (Note 2)

–0.8 –1.2

t_rr

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

I_F= –6.6 A,

dI_F/dt = 100 A/µs

Q_rr

Notes:

1. R_θJAis determined with the device mounted on a 1 in²oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJCis guaranteed by design while R_θJAis

determined by the user's board design.

(a) R_θJA= 52°C/W when mounted on a 1in²pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB

(b) R_θJA= 145°C/W when mounted on a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDMA291P Rev B (W)

Typical Characteristics

2.6

2.4

2.2

V_GS= -1.8V

V_GS= -4.5V

-3.0V

-2.5V

-4.0V

-3.5V

1.8

1.6

1.4

1.2

-2.0V

-2.5V

-1.8V

-3.0V

-3.5V

-4.0V

-4.5V

0.8

150

-V_DS, DRAIN-SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.15

1.6

1.4

1.2

I_D= -6.6A

_GS= -10V

I_D= -3.3A

0.12

0.09

0.06

0.03

T_A= 125^oC

T_A= 25^oC

0.8

0.6

-50

-25

100

125

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

V_DS= -10V

T_A= -55^oC

125^oC

25^oC

0.1

T_A= 125^oC

0.01

0.001

0.0001

25^oC

-55^oC

0.2

0.4

0.6

0.8

1.2

1.4

1.6

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDMA291P Rev B (W)

Typical Characteristics

1600

1200

800

400

f = 1MHz

V_GS= 0 V

V_DS= -5V

I_D= -6.6A

-15V

-10V

C_iss

C_oss

C_rss

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

1000

100

SINGLE PULSE

R_θJA= 145°C/W

_A= 25°C

100us

1ms

10ms

100ms

R_DS(ON)LIMIT

10s

0.1

V_GS= -10V

SINGLE PULSE

R_θJA= 145^oC/W

0.01

0.001

_A= 25^oC

0.01

0.1

100

1000

0.0001

0.001

0.01

0.1

100

1000

-V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power

Dissipation.

D = 0.5

R_θJA(t) = r(t) * R_θJA

R_θJA=145 °C/W

0.2

0.1

0.05

P(pk)

0.02

t₁

0.01

t₂

0.01

T_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDMA291P Rev B (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FAST

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

PowerEdge™

PowerSaver™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

PowerTrench

QFET

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

μSerDes™

ScalarPump™

SILENT SWITCHER

SMART START™

SPM™

HiSeC™

TinyLogic

EcoSPARK™

I C™

MSXPro™

OCX™

TINYOPTO™

TruTranslation™

UHC™

E CMOS™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

EnSigna™

FACT™

FACT Quiet Series™

OCXPro™

OPTOLOGIC

UniFET™

OPTOPLANAR™

PACMAN™

POP™

UltraFET

Across the board. Around the world.™

VCX™

Wire™

The Power Franchise

Programmable Active Droop™

Power247™

Stealth™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,

SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I19

FDMA291P相关文章

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FDMA291P产品参数

型号:	FDMA291P
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	SON
包装说明：	2 X 2 MM, 0.80 MM HEIGHT, ANTIMONY AND HALOGEN FREE, ROHS COMPLIANT, MO-229, MICROFET-6
针数：	6
Reach Compliance Code：	unknown
风险等级：	5.36
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	6.6 A
最大漏源导通电阻：	0.042 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-N6
JESD-609代码：	e4
湿度敏感等级：	1
元件数量：	1
端子数量：	6
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	NICKEL PALLADIUM GOLD
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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