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产品型号FDMC5614P的概述

FDMC5614P 芯片概述 FDMC5614P是一款高性能的N沟道功率MOSFET，广泛应用于电源管理、DC-DC转换器、LED驱动、电机控制等领域。作为一款低导通电阻、高速度的开关元件，FDMC5614P能够有效降低功率损耗，提高电路的整体效率。这种特性使其成为现代电源设计中不可或缺的组成部分。芯片详细参数 FDMC5614P的主要参数如下： - 最大漏源电压 (V_DS): 30V - 最大连续漏电流 (I_D): 20A - 谷阱电阻 (R_DS(on)): 10mΩ（V_GS=10V时） - 门源电压 (V_GS): ±20V - 最大功耗 (P_D): 2.5W（环境温度25℃） - 工作温度范围: -55℃至+150℃ - 封装类型: SO-8 - 引脚数: 8引脚厂家、包装与封装 FDMC5614P由Fairchild Semiconductor（现为ON Sem...

产品型号FDMC5614P的Datasheet PDF文件预览

January 2007

FDMC5614P

P-Channel PowerTrench^®MOSFET

-60V, -13.5A, 100mΩ

Features

General Description

Max r_DS(on)= 100mΩ at V_GS= -10V, I_D= -5.7A

Max r_DS(on)= 135mΩ at V_GS= -4.5V, I_D= -4.4A

Low gate charge

This P-Channel MOSFET is a rugged gate version of Fairchild

Semiconductor's advanced PowerTrench^®process. It has been

optimized for power management applications requiring a wide

range of gate drive voltage ratings (4.5V-20V).

Fast switching speed

High performance trench technology for extremely low r_DS(on)

High power and current handling capability

RoHS Compliant

Application

Power management

Load switch

Battery protection

Bottom

Top

Power 33

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-60

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

-13.5

-14

I_D

T_A= 25°C

(Note 1a)

-5.7

-Pulsed

-23

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

2.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.0

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

8mm

Quantity

5614P

FDMC5614P

Power 33

7’’

3000 units

FDMC5614P Rev.C

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= -250μA, V_GS= 0V

-60

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

I_D= -250μA, referenced to 25°C

-54

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= -48V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

-1

μA

±100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= -250μA

-1

-1.95

4.7

-3

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= -250μA, referenced to 25°C

mV/°C

V_GS= -10V, I_D= -5.7A

108

140

100

135

168

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= -4.5V, I_D= -4.4A

V_GS= -10V, I_D= -5.7A , T_J= 125°C

V_DS= -15V, I_D= -5.7A

mΩ

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

795

140

1055

185

V_DS= -30V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Q_g(TOT)

Q_gs

Turn-On Delay Time

Rise Time

2.1

V_DD= -30V, I_D= -1A

V_GS= -10V, R_GEN= 6Ω

Turn-Off Delay Time

Fall Time

Total Gate Charge at 10V

Gate to Source Gate Charge

V_GS= -10V

V_DD= -30V

I_D= -5.7A

1.6

Q_gd

Gate to Drain “Miller” Charge

2.7

3.5

Drain-Source Diode Characteristics

V_SD

t_rr

Source to Drain Diode Forward Voltage V_GS= 0V, I_S= -3.2A

-0.8

-1.2

Reverse Recovery Time

I_F= -3.2A, di/dt = 100A/μs

Q_rr

Reverse Recovery Charge

Notes:

is determined with the device mounted on a 1 in oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by the

θJA

θJC

user's board design.

(a)R

(b)R

= 60°C/W when mounted on a 1 in pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.

= 135°C/W when mounted on a minimum pad of 2 oz copper.

θJA

b.135°C/W when mounted on

minimum pad of 2 oz copper

a. 60°C/W when mounted on

a 1 in pad of 2 oz copper

2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

www.fairchildsemi.com

FDMC5614P Rev.C

Typical Characteristics T_J= 25°C unless otherwise noted

2.0

1.8

1.6

1.4

1.2

1.0

0.8

PULSE DURATION = 300μs

DUTY CYCLE = 2.0%MAX

= -10V

V_GS= -3.0V

= -5V

= -4.5V

V_GS= -3.5V

V_GS= -5V

= -3.5V

= -3.0V

V_GS= -4.5V

V_GS= -10V

PULSE DURATION = 300μs

DUTY CYCLE = 2.0%MAX

-I_D, DRAIN CURRENT(A)

-V , DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

350

2.0

PULSE DURATION =300μs

DUTY CYCLE = 2.0%MAX

= -5.7A

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

300

250

200

150

100

= -10V

= 125^oC

= 25^oC

-50 -25

100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 300μs

DUTY CYCLE = 2.0%MAX

= 0V

T = 125^oC

= -5V

0.1

= 25^oC

0.01

1E-3

1E-4

T = 25^oC

T = 125^oC

= -55^oC

1.0

=-55^oC

0.2

0.4

0.6

0.8

1.2

1.4

-V , BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDMC5614P Rev.C

Typical Characteristics T_J= 25°C unless otherwise noted

2000

1000

= -5.7A

= -20V

iss

= -30V

100

oss

= -40V

rss

f = 1MHz

= 0V

0.1

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

LIMITED

DS(on)

100us

1ms

0.1

T_J= 25^oC

10ms

100ms

10s

SINGLE PULSE

_J= MAX RATED

T_J= 125^oC

0.01

1E-3

R_θJA= 135 C/W

_A= 25 C

0.01

200

0.1

100

0.1

100

t_AV, TIME IN AVALANCHE(ms)

-V , DRAIN-SOURCE VOLTAGE (V)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Forward Bias Safe

Operating Area

1000

= 25 C

V_GS= -10V

FOR TEMPERATURES

ABOVE 25 C DERATE PEAK

CURRENT AS FOLLOWS:

100

150 – T

I = I

-----------------------

125

SINGLE PULSE

R_θJA= 135^oC/W

0.5

10^-4

10^-3

10^-2

10^-1

t, PULSE WIDTH (s)

10⁰

10¹

10²

10³

Figure 11. Single Pulse Maximum Power Dissipation

www.fairchildsemi.com

FDMC5614P Rev.C

Typical Characteristics T_J= 25°C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

SINGLE PULSE

R_θJA= 135^oC/W

NOTES:

DUTY FACTOR: D = t /t

1E-3

PEAK T = P

x Z

x R

+ T

θJA A

θJA

0.0005

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

10³

t, RECTANGULAR PULSE DURATION (s)

Figure 12. Transient Thermal Response Curve

www.fairchildsemi.com

FDMC5614P Rev.C

www.fairchildsemi.com

FDMC5614P Rev.C

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT Quiet Series™

GlobalOptoisolator™

GTO™

OCX™

OCXPro™

SILENT SWITCHER^®

SMART START™

SPM™

UniFET™

VCX™

Wire™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

OPTOLOGIC^®

OPTOPLANAR™

PACMAN™

POP™

HiSeC™

Stealth™

I²C™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

TinyBoost™

TinyBuck™

TinyPWM™

TinyPower™

TinyLogic^®

TINYOPTO™

TruTranslation™

UHC^®

i-Lo™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

Power247™

PowerEdge™

PowerSaver™

PowerTrench^®

QFET^®

EcoSPARK™

E²CMOS™

EnSigna™

FACT^®

FAST^®

FASTr™

FPS™

FRFET™

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

Across the board. Around the world.™

The Power Franchise^®

ScalarPump™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO

IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE

OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE

RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,

SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT

THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body, or (b) support

or sustain life, or (c) whose failure to perform when properly used

in accordance with instructions for use provided in the labeling,

can be reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life support device

or system whose failure to perform can be reasonably expected

to cause the failure of the life support device or system, or to

affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I22

FDMC5614P Rev. C

www.fairchildsemi.com

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