FDMC7692各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDMC7692的概述

FDMC7692芯片概述 FDMC7692是一款高性能的N沟道MOSFET，广泛应用于开关电源、直流-直流转换器及其他功率电子设备中。该芯片具有超低的导通电阻和快速的开关特性，使其成为高效率应用的理想选择。FDMC7692的设计旨在提高功率密度并降低热损耗，这使得它在现代电子设计中具有重要地位。芯片FDMC7692的详细参数 FDMC7692的技术参数如下： 1. 最大漏极源极电压（V_DS）：30V 2. 最大连续漏极电流（I_D）：55A 3. 导通电阻（R_DS(on)）：在V_GS = 10V时为5.0mΩ 4. 输入电容（C_iss）：4200pF（典型值） 5. 输出电容（C_oss）：290pF（典型值） 6. 反向恢复时间（t_rr）：30ns（典型值） 7. 门极阈值电压（V_GS(th)）：2V至4V 8. 热特性： - 工作温度范围：-55℃至+150℃ ...

产品型号FDMC7692的Datasheet PDF文件预览

July 2009

FDMC7692

N-Channel Power Trench^®MOSFET^ꢀ

30 V, 13.3 A, 8.5 mꢁ

Features

General Description

Max r_DS(on)= 8.5 mꢁ at V_GS= 10 V, I_D= 13.3 A

Max r_DS(on)= 11.5 mꢁ at V_GS= 4.5 V, I_D= 10.6 A

High performance technology for extremely low r_DS(on)

Termination is Lead-free and RoHS Compliant

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance. This

device is well suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

Application

DC - DC Buck Converters

Notebook battery power management

Load switch in Notebook

Bottom

Top

Pin 1

MLP 3.3x3.3

MOSFET Maximum Ratings ^T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous (Package limited)

-Continuous

T_C= 25 °C

T_A= 25 °C

13.3

I_D

(Note 1a)

-Pulsed

E_AS

P_D

Single Pulse Avalanche Energy

Power Dissipation

(Note 3)

(Note 1a)

2.3

T_A= 25 °C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_ꢂJA

Thermal Resistance, Junction to Ambient

(Note 1a)

°C/W

Package Marking and Ordering Information

Device Marking

FDMC7692

Device

FDMC7692

Package

MLP 3.3x3.3

Reel Size

13 ’’

Tape Width

12 mm

Quantity

3000 units

FDMC7692 Rev.B

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 ꢃA, V_GS= 0 V

ꢄBV_DSS

ꢀꢀꢀꢄT_J

Breakdown Voltage Temperature

Coefficient

_D= 250 ꢃA, referenced to 25 °C

_DS= 24 V, V_GS= 0 V

T_J= 125 °C

mV/°C

250

100

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

ꢃA

V_GS= 20 V, V_DS= 0 V

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 ꢃA

1.2

1.9

-6

3.0

ꢀꢄV_GS(th)

ꢀꢀꢀꢄT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= 250 ꢃA, referenced to 25 °C

mV/°C

_GS= 10 V, I_D= 13.3 A

7.2

9.5

8.5

11.5

12.0

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 4.5 V, I_D= 10.6 A

V_GS= 10 V, I_D= 13.3 A, T_J= 125 °C

V_DD= 5 V, I_D= 13.3 A

mꢁ

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

1260

480

1680

635

100

ꢁ

V_DS= 15 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.9

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

V_DD= 15 V, I_D= 13.3 A,

_GS= 10 V, R_GEN= 6 ꢁ

Total Gate Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 4.5 V

Q_g(TOT)

V_DD= 15 V

_D= 13.3 A

Q_gs

Q_gd

Drain-Source Diode Characteristics

_GS= 0 V, I_S= 13.3 A

(Note 2)

0.86

0.75

1.2

V_SD

Source to Drain Diode Forward Voltage

V_GS= 0 V, I_S= 1.9 A

t_rr

Reverse Recovery Time

I_F= 13.3 A, di/dt = 100 A/ꢃs

Q_rr

Reverse Recovery Charge

NOTES:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R

is determined by

ꢂCA

ꢂJA

ꢂJC

the user's board design.

b.125 °C/W when mounted on

a minimum pad of 2 oz copper

a. 53 °C/W when mounted on

a 1 in pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 ꢃs, Duty cycle < 2.0 %.

3. E

of 58 mJ is based on starting T = 25 C, L = 1 mH, I = 10.8 A, V = 27 V, V = 10 V. 100% test at L = 3 mH, I

= 4 A.

www.fairchildsemi.com

FDMC7692 Rev.B

Typical Characteristics T_J= 25 °C unless otherwise noted

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

PULSE DURATION = 80 ꢃs

DUTY CYCLE = 0.5% MAX

V_GS= 10 V

V_GS= 3.5 V

V_GS= 6 V

V_GS= 4.5 V

V_GS= 4 V

V_GS= 3.5 V

V_GS= 4 V

V_GS= 4.5 V

V_GS= 3 V

V_GS= 6 V

V_GS= 10 V

30 40

I_D, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.6

PULSE DURATION = 80 ꢃs

DUTY CYCLE = 0.5% MAX

I_D= 13.3 A

_GS= 10 V

I_D= 13.3 A

1.4

1.2

1.0

0.8

0.6

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

V_GS= 0 V

PULSE DURATION = 80 ꢃs

DUTY CYCLE = 0.5% MAX

V_DS= 5 V

T_J= 150 ^o

T_J= 25 ^oC

0.1

T_J= 25 ^o

T_J= -55 ^o

0.01

T_J= -55 ^o

0.001

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDMC7692 Rev.B

Typical Characteristics T_J= 25 °C unless otherwise noted

3000

1000

I_D= 13.3 A

C_iss

V_DD= 10 V

C_oss

V_DD= 15 V

V_DD= 20 V

100

C_rss

f = 1 MHz

= 0 V

0.1

Q , GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

T_J= 25 ^oC

V_GS= 10 V

T_J= 100 ^o

V_GS= 4.5 V

T_J= 125 ^o

Limited by Package

R_ꢂJC= 5.0 ^oC/W

0.01

0.1

100

125

150

T_c,

CASE TEMPERATURE ( )

^oC

t_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

1000

V_GS= 10 V

100 ꢃs

100

1 ms

10 ms

0.1

THIS AREA IS

100 ms

LIMITED BY r

DS(on)

SINGLE PULSE

T_J= MAX RATED

1 s

10 s

SINGLE PULSE

_ꢂJA= 125 ^oC/W

T_A= 25 ^oC

_A= 25 ^oC

0.5

0.01

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

100 1000

0.01

0.1

100

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

www.fairchildsemi.com

FDMC7692 Rev.B

Typical Characteristics T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

PEAK T = P

x Z

x R

+ T

ꢂJA

ꢂJA A

_ꢂJA= 125 ^oC/W

0.001

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 13. Transient Thermal Response Curve

www.fairchildsemi.com

FDMC7692 Rev.B

Dimensional Outline and Pad Layout

3.30

0.10 C

3.30

PIN#1 QUADRANT

0.10 C

TOP VIEW

0.8 MAX

RECOMMENDED LAND PATTERN

0.10 C

(0.203)

0.08 C

0.05

0.00

SEATING

PLANE

SIDE VIEW

2.32

2.22

^0.7854

PIN #1 IDENT

0.55

0.45

(4X)

0.350

1.150

R0.150

0.299

2.05

1.95

0.40

0.30

(8X)

0.65

0.10

0.05

C A B

1.95

BOTTOM VIEW

A. DOES NOT CONFORM TO JEDEC

REGISTRATION MO-229

B. DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSIONS AND TOLERANCES PER

ASME Y14.5M, 1994

D. DRAWING FILE NAME : MLP08XREVA

E. LAND PATTERN RECOMMENDATION IS

BASED ON FSC DESIGN ONLY

www.fairchildsemi.com

FDMC7692 Rev.B

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

PowerTrench^®

PowerXS™

Programmable Active Droop™

QFET^®

QS™

The Power Franchise^®

AccuPower™

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK^®

EfficentMax™

EZSWITCH™*

™*

FPS™

F-PFS™

FRFET^®

Global Power Resource^SM

Green FPS™

Green FPS™ e-Series™

Gmax™

TinyBoost™

TinyBuck™

Quiet Series™

RapidConfigure™

TinyCalc™

TinyLogic^®

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

TRUECURRENT™*

μSerDes™

™

Saving our world, 1mW/W/kW at a time™

SmartMax™

SMART START™

SPM^®

MicroPak™

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC^®

Fairchild^®

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

UHC^®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

OPTOPLANAR^®

FAST^®

FastvCore™

Sync-Lock™

FETBench™

PDP SPM™

Power-SPM™

FlashWriter^®

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR

CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.

Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide

any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status

Definition

Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Advance Information

Preliminary

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

First Production

Full Production

Not In Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

No Identification Needed

Obsolete

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I41

www.fairchildsemi.com

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FDMC7692产品参数

型号:	FDMC7692
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	ON SEMICONDUCTOR
包装说明：	SMALL OUTLINE, S-PDSO-N5
制造商包装代码：	511DQ
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
Factory Lead Time：	23 weeks
风险等级：	0.98
Is Samacsys：	N
雪崩能效等级（Eas）：	58 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	16 A
最大漏极电流 (ID)：	13.3 A
最大漏源导通电阻：	0.0085 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-N5
JESD-609代码：	e4
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	29 W
最大脉冲漏极电流 (IDM)：	40 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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