FDP8880现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

February 2005

FDP8880 / FDB8880

N-Channel PowerTrench MOSFET

®

30V, 54A, 11.6mΩ

Features

General Description

r_DS(ON)= 14.5mΩ, V_GS= 4.5V, I_D= 40A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(ON)= 11.6mΩ, V_GS= 10V, I_D= 40A

High performance trench technology for extremely low

r_DS(ON)

r

_DS(ON)and fast switching speed.

Low gate charge

High power and current handling capability

Applications

DC/DC converters

DRAIN

(FLANGE)

DRAIN

(FLANGE)

D

S

SOURCE

DRAIN

GATE

G

SOURCE

TO-263AB

TO-220AB

FDP SERIES

FDB SERIES

www.fairchildsemicom

FDP8880 / FDB8880 Rev. A

1

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

30

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

V

±20

Continuous (T_C= 25^oC, V_GS= 10V)

Continuous (T_C= 25^oC, V_GS= 4.5V)

Continuous (T_amb= 25^oC, V_GS= 10V, with R_θJA= 43^oC/W)

Pulsed

54

48

A

I_D

11

A

Figure 4

31

A

E_AS

Single Pulse Avalanche Energy (Note 1)

mJ

Power dissipation

Derate above 25^oC

55

W

P_D

0.37

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-220,TO-263

2.73

62

^oC/W

Thermal Resistance Junction to Ambient TO-220,TO-262 ( Note 2)

Thermal Resistance Junction to Ambient TO-263, 1in²copper pad area

43

Package Marking and Ordering Information

Device Marking

FDP8880

Device

FDP8880

Package

TO-220AB

TO-263AB

TO-220AB

TO-263AB

Reel Size

Tube

Tape Width

Quantity

N/A

24mm

N/A

50 units

800 units

50 units

800 units

FDB8880

330mm

Tube

FDP8880

FDP8880_NL (Note 3)

FDB8880_NL (Note 3)

FDB8880

330mm

24mm

Electrical Characteristics ^T_C= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B_VDSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 250µA, V_GS= 0V

30

-

V

_DS= 24V

1

I_DSS

µA

nA

V_GS= 0V

T_C= 150^oC

-

250

±100

I_GSS

V_GS= ±20V

-

On Characteristics

V_GS(TH)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250µA

1.2

-

2.5

V

I_D= 40A, V_GS= 10V

-

0.0095 0.0116

0.012 0.0145

I

_D= 40A, V_GS= 4.5V

r_DS(ON)

Drain to Source On Resistance

Ω

I_D= 40A, V_GS= 10V,

T_J= 175^oC

-

0.015 0.019

FDP8880 / FDB8880 Rev. A

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2

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

R_G

Input Capacitance

-

1240

255

147

2.7

22

-

pF

Ω

V_DS= 15V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

-

V_GS= 0.5V, f = 1MHz

V_GS= 0V to 10V

V_GS= 0V to 5V

-

Q_g(TOT)

Q_g(5)

Q_g(TH)

Q_gs

Total Gate Charge at 10V

Total Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

29

16

2.1

-

nC

12

V_DD= 15V

_D= 40A

I_g= 1.0mA

V_GS= 0V to 1V

1.6

3.2

2.0

4.8

I

Q_gs2

Q_gd

-

Switching Characteristics (V_GS= 10V)

t_ON

t_d(ON)

t_r

Turn-On Time

Turn-On Delay Time

Rise Time

-

8

171

ns

-

107

47

51

-

V

_DD= 15V, I_D= 40A

_GS= 10V, R_GS= 13.6Ω

t_d(OFF)

t_f

Turn-Off Delay Time

Fall Time

-

t_OFF

Turn-Off Time

147

Drain-Source Diode Characteristics

I

_SD= 40A

-

1.25

1.0

27

V

V_SD

Source to Drain Diode Voltage

I_SD= 3.5A

t_rr

Reverse Recovery Time

I_SD= 40A, dI_SD/dt = 100A/µs

ns

nC

Q_RR

Reverse Recovered Charge

18

Notes:

1: Starting T = 25°C, L = 34uH, I = 43A,Vdd = 27V, Vgs = 10V.

J

AS

2: Pulse width = 100s.

3: FDP8880_NL / FDB8880_NL is lead free product.

FDP8880_NL / FDB8880_NL marking will appear on the reel label.

FDP8880 / FDB8880 Rev. A

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3

Typical Characteristics T_C= 25°C unless otherwise noted

1.2

60

1.0

0.8

40

0.6

0.4

20

0.2

0

150

0

25

50

75

100

175

125

o

25

50

75

100

125

150

175

o

T

, CASE TEMPERATURE ( C)

C

T

, CASE TEMPERATURE ( C)

C

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

1

0.1

0.05

0.02

0.01

P

DM

0.1

t

1

t

2

NOTES:

DUTY FACTOR: D = t /t

1

2

SINGLE PULSE

0.01

PEAK T = P x Z

x R

+ T

J

DM

θJC

θJC C

-5

-4

-3

-2

-1

0

1

10

t, RECTANGULAR PULSE DURATION (s)

10

Figure 3. Normalized Maximum Transient Thermal Impedance

600

o

T

= 25 C

C

FOR TEMPERATURES

o

ABOVE 25 C DERATE PEAK

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

CURRENT AS FOLLOWS:

175 - T

150

C

I = I

25

V

= 10V

GS

V

= 4.5V

GS

100

50

-5

-4

-3

-2

-1

0

1

10

t, PULSE WIDTH (s)

10

Figure 4. Peak Current Capability

FDP8880 / FDB8880 Rev. A

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4

Typical Characteristics T_C= 25°C unless otherwise noted

400

100

500

If R = 0

= (L)(I )/(1.3*RATED BV

t

AV

- V

DD

)

AS

DSS

10µs

If R ≠ 0

t

= (L/R)ln[(I *R)/(1.3*RATED BV

- V ) +1]

DSS DD

AV

AS

100

100µs

10

1

1ms

o

STARTING T = 25 C

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

DS(ON)

J

10

10ms

SINGLE PULSE

o

STARTING T = 150 C

J

T

= MAX RATED

J

DC

o

T

= 25 C

C

0.1

1

0.001

0.01

0.1

t , TIME IN AVALANCHE (ms)

AV

1

10

100

1

10

, DRAIN TO SOURCE VOLTAGE (V)

40

V

DS

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 5. Forward Bias Safe Operating Area

80

160

PULSE DURATION = 80µs

V

= 4.5V

GS

V

= 3.5V

DUTY CYCLE = 0.5% MAX

GS

V

= 15V

DD

120

80

40

0

60

40

20

0

V

= 10V

GS

V

= 3V

GS

o

T

= 175 C

J

o

T

= 25 C

C

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

o

T

= 25 C

J

T = -55 C

J

V

= 2.5V

0.75

GS

0

0.25

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

, GATE TO SOURCE VOLTAGE (V)

V

, DRAIN TO SOURCE VOLTAGE (V)

GS

DS

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

20

1.7

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

I

= 54A

D

1.53

1.36

1.19

1.02

16

12

8

I

= 5A

D

0.85

0.7

V

= 10V, I = 54A

D

GS

2

4

6

8

10

-80

-40

0

40

80

120

160

200

o

T , JUNCTION TEMPERATURE ( C)

V

, GATE TO SOURCE VOLTAGE (V)

J

GS

Figure 9. Drain to Source On Resistance vs Gate

Voltage and Drain Current

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDP8880 / FDB8880 Rev. A

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5

Typical Characteristics T_C= 25°C unless otherwise noted

1.1

1.5

I

= 250µA

D

V

= V , I = 250µA

DS D

GS

1.2

1.0

0.9

0.6

0.3

0.9

-80

-40

0

40

80

120

160

200

-80

-40

0

40

80

120

160

200

o

T , JUNCTION TEMPERATURE ( C)

J

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

2000

10

V

= 15V

DD

8

6

4

2

0

C

= C + C

GS GD

ISS

1000

C

+ C

OSS

DS GD

C

= C

GD

RSS

WAVEFORMS IN

DESCENDING ORDER:

I

= 54A

= 5A

D

V

= 0V, f = 1MHz

GS

100

0.1

0

5

10

15

20

25

30

1

10

V

, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

DS

g

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge Waveforms for Constant

Gate Current

FDP8880 / FDB8880 Rev. A

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6

Test Circuits and Waveforms

V

DS

BV

DSS

t

P

L

V

DS

I

VARY t TO OBTAIN

P

AS

+

-

V

DD

R

REQUIRED PEAK I

G

AS

V

DD

V

GS

DUT

t

P

I

0V

AS

0

0.01Ω

t

AV

Figure 15. Unclamped Energy Test Circuit

Figure 16. Unclamped Energy Waveforms

V

DS

V

Q

DD

g(TOT)

V

DS

GS

L

V

= 10V

GS

Q

V

g(5)

GS

+

Q

gs2

V

= 5V

DD

GS

-

DUT

V

= 1V

GS

I

g(REF)

0

Q

g(TH)

Q

gs

gd

I

g(REF)

0

Figure 17. Gate Charge Test Circuit

Figure 18. Gate Charge Waveforms

V

DS

t

ON

OFF

t

d(OFF)

t

d(ON)

R

t

f

L

r

V

DS

90%

+

-

V

GS

V

DD

10%

0

DUT

90%

50%

R

GS

V

GS

50%

PULSE WIDTH

V

10%

GS

0

Figure 19. Switching Time Test Circuit

Figure 20. Switching Time Waveforms

FDP8880 / FDB8880 Rev. A

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7

PSPICE Electrical Model

.SUBCKT FDP8880 2 1 3 ; rev October 2004

Ca 12 8 9.5e-10

Cb 15 14 9.5e-10

Cin 6 8 1.15e-9

LDRAIN

DPLCAP

DRAIN

2

5

10

Dbody 7 5 DbodyMOD

Dbreak 5 11 DbreakMOD

Dplcap 10 5 DplcapMOD

RLDRAIN

RSLC1

51

DBREAK

+

RSLC2

5

ESLC

11

51

Ebreak 11 7 17 18 32.88

Eds 14 8 5 8 1

Egs 13 8 6 8 1

Esg 6 10 6 8 1

Evthres 6 21 19 8 1

-

+

50

-

17

DBODY

RDRAIN

6

8

EBREAK 18

-

ESG

EVTHRES

+

16

21

+

-

19

8

MWEAK

Evtemp 20 6 18 22 1

LGATE

EVTEMP

RGATE

GATE

1

6

+

-

18

22

MMED

It 8 17 1

9

20

MSTRO

8

RLGATE

Lgate 1 9 5.3e-9

Ldrain 2 5 1.0e-9

Lsource 3 7 1.7e-9

LSOURCE

CIN

SOURCE

3

7

RSOURCE

RLSOURCE

RLgate 1 9 53

RLdrain 2 5 10

RLsource 3 7 17

S1A

S2A

RBREAK

12

15

13

14

13

17

18

8

RVTEMP

19

-

S1B

S2B

Mmed 16 6 8 8 MmedMOD

Mstro 16 6 8 8 MstroMOD

Mweak 16 21 8 8 MweakMOD

13

CB

CA

IT

14

+

VBAT

6

8

5

8

EGS

EDS

+

Rbreak 17 18 RbreakMOD 1

Rdrain 50 16 RdrainMOD 1.0e-3

Rgate 9 20 2.2

-

8

22

RVTHRES

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

Rsource 8 7 RsourceMOD 6.8e-3

Rvthres 22 8 RvthresMOD 1

Rvtemp 18 19 RvtempMOD 1

S1a 6 12 13 8 S1AMOD

S1b 13 12 13 8 S1BMOD

S2a 6 15 14 13 S2AMOD

S2b 13 15 14 13 S2BMOD

Vbat 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}

.MODEL DbodyMOD D (IS=3E-12 IKF=10 N=1.01 RS=5e-3 TRS1=8e-4 TRS2=2e-7

+ CJO=4.8e-10 M=0.55 TT=1e-11 XTI=2)

.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=-8.8e-6)

.MODEL DplcapMOD D (CJO=5.5e-10 IS=1e-30 N=10 M=0.45)

.MODEL MstroMOD NMOS (VTO=2.10 KP=170 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MmedMOD NMOS (VTO=1.75 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.2)

.MODEL MweakMOD NMOS (VTO=1.39 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=22 RS=0.1)

.MODEL RbreakMOD RES (TC1=8.0e-4 TC2=-8e-7)

.MODEL RdrainMOD RES (TC1=-12e-3 TC2=.35e-4)

.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)

.MODEL RsourceMOD RES (TC1=5e-3 TC2=1e-6)

.MODEL RvtempMOD RES (TC1=-2.78e-3 TC2=1.5e-6)

.MODEL RvthresMOD RES (TC1=-1e-3 TC2=-8.2e-6)

MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)

.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.3 VOFF=-0.8)

.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.8 VOFF=-1.3)

.ENDS

Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank

Wheatley.

FDP8880 / FDB8880 Rev. A

www.fairchildsemicom

8

SABER Electrical Model

rev October 2004

template FDP8880 n2,n1,n3

electrical n2,n1,n3

{

var i iscl

dp..model dbodymod = (isl=3e-12,ikf=10,nl=1.01,rs=5e-3,trs1=8e-4,trs2=2e-7,cjo=4.8e-10,m=0.55,tt=1e-11,xti=2)

dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.8e-6)

dp..model dplcapmod = (cjo=5.5e-10,isl=10e-30,nl=10,m=0.45)

m..model mstrongmod = (type=_n,vto=2.10,kp=170,is=1e-30, tox=1)

m..model mmedmod = (type=_n,vto=1.75,kp=10,is=1e-30, tox=1)

m..model mweakmod = (type=_n,vto=1.39,kp=0.05,is=1e-30, tox=1,rs=0.1)

sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3.5)

LDRAIN

sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-4)

sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.3,voff=-0.8)

sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.8,voff=-1.3)

c.ca n12 n8 = 9.5e-10

c.cb n15 n14 = 9.5e-10

c.cin n6 n8 = 1.15e-9

DPLCAP

DRAIN

2

5

10

RLDRAIN

RSLC1

51

RSLC2

ISCL

dp.dbody n7 n5 = model=dbodymod

dp.dbreak n5 n11 = model=dbreakmod

dp.dplcap n10 n5 = model=dplcapmod

DBREAK

11

50

-

RDRAIN

6

8

ESG

DBODY

EVTHRES

+

16

21

+

-

19

8

spe.ebreak n11 n7 n17 n18 = 32.88

spe.eds n14 n8 n5 n8 = 1

spe.egs n13 n8 n6 n8 = 1

MWEAK

LGATE

EVTEMP

RGATE

GATE

1

6

+

-

18

22

EBREAK

+

MMED

9

20

spe.esg n6 n10 n6 n8 = 1

spe.evthres n6 n21 n19 n8 = 1

spe.evtemp n20 n6 n18 n22 = 1

MSTRO

8

17

18

-

RLGATE

LSOURCE

CIN

SOURCE

3

7

RSOURCE

i.it n8 n17 = 1

RLSOURCE

S1A

S2A

l.lgate n1 n9 = 5.3e-9

l.ldrain n2 n5 = 1.0e-9

l.lsource n3 n7 = 1.7e-9

RBREAK

12

15

13

8

14

13

17

18

RVTEMP

19

S1B

S2B

13

CB

res.rlgate n1 n9 = 53

res.rldrain n2 n5 = 10

res.rlsource n3 n7 = 17

CA

IT

14

-

+

VBAT

6

8

5

8

EGS

EDS

+

-

8

m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u

22

m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u

m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u

RVTHRES

res.rbreak n17 n18 = 1, tc1=8.0e-4,tc2=-8e-7

res.rdrain n50 n16 = 1.0e-3, tc1=-12e-3,tc2=.35e-4

res.rgate n9 n20 = 2.2

res.rslc1 n5 n51 = 1e-6, tc1=9e-4,tc2=1e-6

res.rslc2 n5 n50 = 1e3

res.rsource n8 n7 = 6.8e-3, tc1=5e-3,tc2=1e-6

res.rvthres n22 n8 = 1, tc1=-1e-3,tc2=-8.2e-6

res.rvtemp n18 n19 = 1, tc1=-2.78e-3,tc2=1.5e-6

sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod

sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod

sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod

sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc=1

equations {

i (n51->n50) +=iscl

iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/170))** 5))}

}

FDP8880 / FDB8880 Rev. A

www.fairchildsemicom

9

PSPICE Thermal Model

JUNCTION

th

REV 23 December 2003

FDP8880T

CTHERM1 TH 6 8e-4

CTHERM2 6 5 1e-3

CTHERM3 5 4 2.5e-3

CTHERM4 4 3 2.6e-3

CTHERM5 3 2 8e-3

CTHERM6 2 TL 1.5e-2

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

RTHERM6

CTHERM1

6

RTHERM1 TH 6 1.44e-1

RTHERM2 6 5 1.9e-1

RTHERM3 5 4 3.0e-1

RTHERM4 4 3 4.0e-1

RTHERM5 3 2 5.7e-1

RTHERM6 2 TL 5.8e-1

CTHERM2

CTHERM3

CTHERM4

CTHERM5

CTHERM6

5

SABER Thermal Model

SABER thermal model FDP8880T

template thermal_model th tl

thermal_c th, tl

{

ctherm.ctherm1 th 6 =8e-4

ctherm.ctherm2 6 5 =1e-3

ctherm.ctherm3 5 4 =2.5e-3

ctherm.ctherm4 4 3 =2.6e-3

ctherm.ctherm5 3 2 =8e-3

ctherm.ctherm6 2 tl =1.5e-2

4

3

2

rtherm.rtherm1 th 6 =1.44e-1

rtherm.rtherm2 6 5 =1.9e-1

rtherm.rtherm3 5 4 =3.0e-1

rtherm.rtherm4 4 3 =4.0e-1

rtherm.rtherm5 3 2 =5.7e-1

rtherm.rtherm6 2 tl =5.8e-1

}

tl

CASE

FDP8880 / FDB8880 Rev. A

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10

TRADEMARKS

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

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As used herein:

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which, (a) are intended for surgical implant into the body,

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when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

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This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

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Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

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The datasheet is printed for reference information only.

11

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