FDS3890现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDS3890的概述

FDS3890芯片的概述 FDS3890是一款由Fairchild Semiconductor（现为英飞凌）生产的双通道N沟道MOSFET，并且是一种较为广泛应用的功率半导体元件。MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor）广泛用于电源管理、开关电源、电子负载和其他各类电子电路中。FDS3890采用了低电阻设计，可以减少在高频和低负载条件下的能量损耗，并提高系统的整体效率。本芯片的主要特点是它具备较低的导通电阻R_DS(on)，这使得FDS3890在高电流和高频率下的应用中表现出色。同时它的高开关速度也使其在动态应用中适应性极强。这些性能使得FDS3890在各种消费电子、工业电源及汽车电子等领域得到了广泛应用。 FDS3890的详细参数在深入了解FDS3890的详细参数之前，需要先认识一些常用的关键技术指标。以下...

产品型号FDS3890的Datasheet PDF文件预览

February 2001

FDS3890

80V N-Channel Dual PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

4.7 A, 80 V.

R_DS(ON)= 44 mΩ @ V_GS= 10 V

_DS(ON)= 50 mΩ @ V_GS= 6 V

• Fast switching speed

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications. The result is a MOSFET that is

easy and safer to drive (even at very high frequencies),

and DC/DC power supply designs with higher overall

efficiency.

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

4.7

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

P_D

(Note 1a)

(Note 1b)

(Note 1c)

1.0

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_θJA

Thermal Resistance, Junction-to-Case

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS3890

13’’

12mm

2500 units

FDS3890 Rev B(W)

2001 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

W_DSS

I_AR

Single Pulse Drain-Source

Avalanche Energy

Maximum Drain-Source Avalanche

Current

V_DD= 40 V, I_D= 4.7 A

175

4.7

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

V_GS= 0 V, I_D= 250 µA

∆BVDSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 µA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_DS= 64 V,

V_GS= 20 V,

V_GS= –20 V

V_GS= 0 V

V_DS= 0 V

µA

I_GSSF

I_GSSR

100

–100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

2.3

–6

V_DS= V_GS, I_D= 250 µA

∆VGS(th)

∆T_J

Gate Threshold Voltage

Temperature Coefficient

I_D= 250 µA, Referenced to 25°C

mV/°C

mΩ

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V,

V_GS= 6.0 V,

I_D= 4.7 A

I_D= 4.4 A

V_GS= 10 V, I_D= 4.7 A, T_J= 125°C

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 10 V,

V_DS= 5 V

I_D= 4.7 A

Forward Transconductance

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

1180

171

V_DS= 40 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD=40 V,

V_GS= 10 V,

I_D= 1 A,

R_GEN= 6 Ω

4.5

5.8

Q_g

Q_gs

Q_gd

_DS= 40 V,

_GS= 10 V

I_D= 4.7 A,

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

1.3

1.2

Drain–Source Diode Forward

V_SD

_GS= 0 V, I_S= 1.3 A

(Note 2)

0.74

Voltage

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 78°C/W when

mounted on a 1in²

pad of 2 oz copper

b) 125°C/W when

mounted on a .04 in²

pad of 2 oz copper

c) 135°C/W when mounted on a

minimum pad.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS3890 Rev B(W)

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= 10V 5.0V

4.0V

V_GS= 4.0V

4.5V

5.0V

6.0V

10V

3.5V

0.8

175

I_D, DRAIN CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.1

2.2

I_D= 2.4 A

I_D= 4.7A

V_GS= 10V

1.8

1.4

0.075

0.05

0.025

T_A= 125^oC

T_A= 25^oC

0.6

0.2

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

V_DS= 5V

T_A= 125^oC

25^oC

-55^oC

0.1

T_A= 125^oC

0.01

0.001

-55^oC

0.2

0.4

0.6

0.8

1.2

1.4

_SD, BODY DIODE FORWARD VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS3890 Rev B(W)

Typical Characteristics

2000

1500

1000

500

f = 1MHz

V_GS= 0 V

I_D= 4.7A

V_DS= 10V

20V

40V

C_ISS

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

R_θJA= 135°C/W

T_A= 25°C

R_DS(ON)LIMIT

100

1ms

10ms

100ms

10s

V_GS= 10V

SINGLE PULSE

R_θJA= 135^oC/W

0.1

0.01

_A= 25^oC

0.1

100

0.01

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_θJA(t) = r(t) + R_θJA

0.2

R_θJA= 135°C/W

0.1

0.05

P(pk)

0.02

0.01

t₁

0.01

t₂

SINGLE PULSE

T_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS3890 Rev B(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

OPTOPLANAR™

PACMAN™

POP™

PowerTrench

QFET™

QS™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

FAST

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

SMART START™

Stealth™

UltraFET

VCX™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

FACT™

FACT Quiet Series™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H2

FDS3890相关文章

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FDS3890产品参数

型号:	FDS3890
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	SOT
包装说明：	SO-8
针数：	8
Reach Compliance Code：	unknown
风险等级：	5.37
Is Samacsys：	N
雪崩能效等级（Eas）：	175 mJ
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	80 V
最大漏极电流 (ID)：	4.7 A
最大漏源导通电阻：	0.044 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	2
端子数量：	8
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	20 A
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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