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产品型号FDS6673AZ的概述

芯片FDS6673AZ概述 FDS6673AZ是一款高效的N通道MOSFET，广泛应用于电源管理领域。它具有低导通电阻和较高的电流处理能力，适合用于开关电源、DC-DC转换器和其他功率管理电路。这款芯片适合在各种电子设备中使用，包括计算机、通信设备和消费电子产品等。 FDS6673AZ的设计结合了先进的制造工艺，旨在提供优异的性能和热管理特点。特别是在高频应用中，该MOSFET能够有效降低开关损耗，从而提高系统的整体效率。它被设计为具有很强的耐压能力和过载保护，使其在多种工作条件下均能稳定运行。芯片FDS6673AZ的详细参数 FDS6673AZ的主要技术参数包括： 1. 最大漏极源极电压 (V_DS)：30V 2. 最大漏极电流 (I_D)：65A 3. 导通电阻 (R_DS(on))：如典型值为15mΩ（V_GS=10V）和23mΩ（V_GS=4.5V） 4. 门极阈值电压 (V...

产品型号FDS6673AZ的Datasheet PDF文件预览

April 2005

FDS6673AZ

30 Volt P-Channel PowerTrench^®MOSFET

Features

General Description

■ –14.5 A, –30 V.

= 7.2 mΩ @ V = –10 V

This P-Channel MOSFET has been designed speciﬁcally to

improve the overall efﬁciency of DC/DC converters using either

synchronous or conventional switching PWM controllers, and

battery chargers.

DS(ON)

= 11 mΩ @ V = – 4.5 V

■ Extended V

range (–25V) for battery applications

GSS

■ ESD protection diode (note 3)

These MOSFETs feature faster switching and lower gate

■ High performance trench technology for extremely low

charge than other MOSFETs with comparable R

cations.

speciﬁ-

DS(ON)

■ High power and current handling capability

The result is a MOSFET that is easy and safer to drive (even at

very high frequencies), and DC/DC power supply designs with

higher overall efﬁciency.

SO-8

Absolute Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

–30

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

DSS

GSS

+25

(Note 1a)

–14.5

–50

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

1.0

T , T

Operating and Storage Junction Temperature Range

–55 to +175

°C

STG

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

θJA

θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6673AZ

13’’

12mm

2500 units

FDS6673AZ Rev. C(W)

www.fairchildsemi.com

Electrical Characteristics T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

Drain–Source Breakdown Voltage

= 0 V, I = –250 µA

–30

DSS

∆BVDSS

∆T

Breakdown Voltage Temperature

Coefﬁcient

= –250 µA, Referenced to 25°C

–25

mV/°C

Zero Gate Voltage Drain Current

Gate–Body Leakage

= –24 V, V = 0 V

–1

µA

DSS

20 V, V = 0 V

GSS

On Characteristics (Note 2)

Gate Threshold Voltage

= V , I = –250 µA

–1

–1.6

5.8

–3

GS(th)

∆VGS(th)

Gate Threshold Voltage

Temperature Coefﬁcient

= –250 µA, Referenced to 25°C

mV/°C

∆T

Static Drain–Source

On–Resistance

= –10 V, I = –14.5 A

6.0

8.8

7.8

7.2

10.4

mΩ

DS(on)

= –4.5 V, I = –12 A

= –4.5 V, I = –14.5A, T = 125°C

Forward Transconductance

= –5 V, I = –14.5 A

Dynamic Characteristics

Input Capacitance

= –15 V, V = 0 V,

4480

1190

615

iss

oss

rss

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

= 15 mV, f = 1.0 MHz

3.8

Switching Characteristics (Note 2)

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= –15 V, I = –1 A,

d(on)

= –10 V, R

= 6 Ω

GEN

134

214

126

118

d(off)

= –15 V, I = –14.5 A,

= –10 V

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

–2.1

–1.2

Drain–Source Diode Forward Voltage

Reverse Recovery Time

= 0 V, I = –2.1 A

(Note 2)

–0.7

I = –14.5 A,

d /d = 100 A/µs

Reverse Recovery Charge

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is deﬁned as the solder mounting surface of the drain pins.

θJA

θJC

is guaranteed by design while R

is determined by the user's board design.

θCA

a) 50°C/W (10 sec) 62.5°

C/W steady state when

mounted on a 1 in pad

b) 105°C/W when

mounted on a .04 in

pad of 2 oz copper

c) 125°/W when mounted

on a minimum pad.

of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

www.fairchildsemi.com

FDS6673AZ Rev. C(W)

Typical Characteristics

3.8

3.4

V_GS= -10V

-6.0V

-4.5V

-4.0V

-3.5V

V_GS= - 3.0V

2.6

2.2

1.8

1.4

-3.5V

-3.0V

-4.0V

-4.5V

-5.0V

-6.0V

-10V

0.6

0.5

1.5

-I_D, DRAIN CURRENT (A)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.7

1.6

1.5

1.4

1.3

1.2

1.1

0.02

0.01

0.00

I_D= -14.5A

V_GS= -10V

I_D= -7.3A

T_A= 125^oC

0.9

0.8

0.7

T_A= 25^oC

-50

-25

100

125

150

175

T_J, JUNCTION TEMPERATURE (°C)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

25°C

T_A= -55°C

V_DS= -5V

125°·C

T_A= 125°C

25°C

0.1

-55°C

0.01

0.001

0.2

-V_SD

0.4

0.6

0.8

1.2

1.5

2.5

3.5

-V_GS, GATE TO SOURCE VOLTAGE (V)

BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

www.fairchildsemi.com

FDS6673AZ Rev. C(W)

Typical Characteristics

6000

5000

4000

3000

2000

1000

f = 1 MHz

_GS= 0 V

I_D= -14.5A

C_ISS

V_DS= -10V

-15V

-20V

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

R_θ_JA= 125°C/W

T_A= 25°C

100µs

R_DS(ON)LIMIT

1ms

10ms

100ms

10s

V_GS= -10V

SINGLE PULSE

R_θ_JA= 125°C/W

0.1

T_A= 25°C

0.01

0.001

0.01

0.1

100

1000

0.01

0.1

100

t₁, TIME (sec)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

Rθ_JA(t) = r(t) * Rθ

Rθ_JA= 125°C/W

0.2

0.1

P(pk)

0.05

0.02

t₁

0.01

t₂

T_J- T_A= P * R

Duty Cycle, D = t₁/t₂

0.01

θ_JA(t)

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

www.fairchildsemi.com

FDS6673AZ Rev. C(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.



ACEx™

POP™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

FAST

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

Power247™

PowerEdge™

PowerSaver™

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™



PowerTrench



QFET

QS™

SyncFET™

HiSeC™



I²C™

QT Optoelectronics™ TinyLogic

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

TINYOPTO™

TruTranslation™

UHC™

MSXPro™

OCX™

i-Lo™

ImpliedDisconnect™

FACT Quiet Series™

OCXPro™

OPTOLOGIC



UltraFET

Across the board. Around the world.™



SILENT SWITCHER UniFET™

SMART START™

VCX™

OPTOPLANAR™

PACMAN™



The Power Franchise

ProgrammableActive Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I15

www.fairchildsemi.com

FDS6673AZ Rev. C(W)

FDS6673AZ相关文章

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FDS6673AZ产品参数

型号:	FDS6673AZ
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	SOT
包装说明：	SO-8
针数：	8
Reach Compliance Code：	unknown
风险等级：	5.33
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	14.5 A
最大漏源导通电阻：	0.0072 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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