FDS6699S各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDS6699S的概述

芯片FDS6699S的概述 FDS6699S是一款高性能的N沟道MOSFET，主要应用于电源管理、DC-DC转换器和其他需要高开关速度和高电流承载能力的电路。作为一款双MOSFET器件，FDS6699S在同一封装中集成了两组功能元件，能够有效地减少PCB面积，简化电路设计。 FDS6699S的主要特点是其较低的R_DS(on)值和较高的最大漏极电流。通过优化沟道设计和增强离子注入工艺，FDS6699S在低电压操作中表现出色，适合在高频率下工作，具备较高的效率。这使得这种MOSFET特别适用于便携式设备和其他对热管理要求严格的应用。芯片FDS6699S的详细参数 FDS6699S的关键参数如下： - 最大漏极电流 (I_D): 20A (Tj=25°C时) - 最大漏源电压 (V_DS): 30V - R_DS(on): 14 mΩ (V_GS=10V时) - 门极阈值电压 (V_GS...

产品型号FDS6699S的Datasheet PDF文件预览

January 2005

FDS6699S

30V N-Channel PowerTrench^®SyncFET™

Features

General Description

■ 21 A, 30 V Max R

= 3.6 mΩ @ V = 10 V

The FDS6699S is designed to replace a single SO-8 MOSFET

and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion

DS(ON)

Max R

= 4.5 mΩ @ V = 4.5 V

■ Includes SyncFET Schottky body diode

efﬁciency, providing a low R

and low gate charge. The

DS(ON)

■ High performance trench technology for extremely low

FDS6699S includes an integrated Schottky diode using Fair-

child’s monolithic SyncFET technology.

and fast switching

DS(ON)

■ High power and current handling capability

■ 100% R (Gate Resistance) tested

Applications

■ Synchronous Rectiﬁer for DC/DC Converters –

■

Notebook Vcore low side switch

Point of Load low side switch

SO-8

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

DSS

GSS

Drain Current – Continuous

– Pulsed

(Note 1a)

105

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

T , T

Operating and Storage Junction Temperature Range

–55 to +125

°C

STG

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

θJA

θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6699S

13’’

12mm

2500 units

FDS6699S Rev. D

www.fairchildsemi.com

Electrical Characteristics T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

Drain–Source Breakdown Voltage

= 0 V, I = 1 mA

DSS

∆BV^DSS

∆T

Breakdown Voltage Temperature

Coefﬁcient

= 1 mA, Referenced to 25°C

mV/°C

Zero Gate Voltage Drain Current

Gate–Body Leakage

= 24 V, V = 0 V

500

100

µA

DSS

20 V, V = 0 V

GSS

On Characteristics (Note 2)

Gate Threshold Voltage

= V , I = 1 mA

1.4

GS(th)

∆V^GS(th)

Gate Threshold Voltage Temperature

Coefﬁcient

= 1 mA, Referenced to 25°C

–3.2

mV/°C

∆T

Static Drain–Source

On–Resistance

= 10 V, I = 21 A

3.0

3.6

4.6

3.6

4.5

5.6

mΩ

DS(on)

= 4.5 V, I = 19 A

=10 V, I =21 A, T =125°C

Forward Transconductance

= 10 V, I = 21 A

100

Dynamic Characteristics

Input Capacitance

= 15 V, V = 0 V,

3610

1050

340

Ω

iss

oss

rss

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

= 15 mV, f = 1.0 MHz

0.4

1.8

3.1

Switching Characteristics (Note 2)

Turn–On Delay Time

= 15 V, I = 1 A,

d(on)

= 10 V, R

= 6 Ω

GEN

Turn–On Rise Time

Turn–Off Delay Time

117

d(off)

Turn–Off Fall Time

Total Gate Charge at Vgs = 10V

Total Gate Charge at Vgs = 5V

Gate–Source Charge

Gate–Drain Charge

= 15 V, I = 21 A,

g(TOT)

Drain–Source Diode Characteristics and Maximum Ratings

Drain–Source Diode Forward Voltage

Diode Reverse Recovery Time

Diode Reverse Recovery Current

Diode Reverse Recovery Charge

= 0 V, I = 3.5 A

(Note 2)

(Note 3)

0.36

0.7

I = 21 A,

d /d = 300 A/µs

2.2

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is deﬁned as the solder mounting surface of the drain pins.

θJA

θJC

is guaranteed by design while R

is determined by the user's board design.

θCA

a) 50°/W when mounted

on a 1 in pad of 2 oz

b) 105°/W when mounted

on a .04 in pad of 2 oz

c) 125°/W when mounted

on a minimum pad.

copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. See “SyncFET Schottky body diode characteristics” below.

www.fairchildsemi.com

FDS6699S Rev. D

Typical Characteristics

105

2.6

2.4

2.2

V_GS= 10V

4.5V

3.0V

V_GS= 2.5V

87.5

3.5V

1.8

1.6

1.4

1.2

52.5

3.0V

3.5V

2.5V

4.0V

4.5V

6.0V

17.5

10V

0.8

0.5

1.5

17.5

52.5

87.5

105

V_DS, DRAIN-SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.012

0.01

1.6

1.4

1.2

I_D= 21A

I_D= 10.5A

_GS=10V

0.008

0.006

0.004

0.002

T_A= 125°C

0.8

0.6

T_A= 25°C

-50

-25

100

125

T_J, JUNCTION TEMPERATURE (°C)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

105

87.5

1000

100

V_GS= 0V

V_DS= 5V

T_A= 125°C

52.5

25°C

T_A= 125°C

0.1

-55°C

0.01

0.001

17.5

25°C

0.2

0.4

0.6

0.8

1.5

2.5

V_SD, BODY DIODE FORWARD VOLTAGE (V)

_GS, GATE TO SOURCE VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Figure 5. Transfer Characteristics.

www.fairchildsemi.com

FDS6699S Rev. D

Typical Characteristics (continued)

5000

4000

3000

2000

1000

f = 1MHz

V_GS= 0 V

I_D= 21A

V_DS= 10V

20V

C_iss

15V

C_oss

C_rss

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

1000

100

SINGLE PULSE

R_θ_JA= 125°C/W

T_A= 25°C

R_DS(ON)LIMIT

100us

1ms

10ms

100ms

10s

V_GS= 10V

SINGLE PULSE

R_θ_JA= 125°C/W

0.1

_A= 25°C

0.01

0.1

100

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_θ(t) = r(t) * R_θ

0.2

Rθ_JA= 125 °C/W

0.1

0.05

P(pk)

0.02

t₁

0.01

t₂

_J- T_A= P * Rθ_JA(t)

Duty Cycle, D = t₁/t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100 1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

www.fairchildsemi.com

FDS6699S Rev. D

Typical Characteristics (continued)

SyncFET Schottky Body Diode Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in paral-

lel with PowerTrench MOSFET. This diode exhibits similar char-

acteristics to a discrete external Schottky diode in parallel with a

MOSFET. Figure 12 shows the reverse recovery characteristic

of the FDS6699S.

Schottky barrier diodes exhibit signiﬁcant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

0.1

T_A= 125^o

0.01

0.001

T_A= 100^o

0.0001

0.00001

T_A= 25^oC

V_DS, REVERSE VOLTAGE (V)

TIME : 12.5ns/div

Figure 13. SyncFET body diode reverse leakage

versus drain-source voltage and temperature.

Figure 12.FDS6699S SyncFET body

diode reverse recovery characteristic.

www.fairchildsemi.com

FDS6699S Rev. D

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.



ACEx™

POP™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

FAST

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

Power247™

PowerEdge™

PowerSaver™

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™



PowerTrench



QFET

QS™

SyncFET™

HiSeC™



I²C™

QT Optoelectronics™ TinyLogic

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

TINYOPTO™

TruTranslation™

UHC™

MSXPro™

OCX™

i-Lo™

ImpliedDisconnect™

FACT Quiet Series™

OCXPro™

OPTOLOGIC



UltraFET

Across the board. Around the world.™



SILENT SWITCHER UniFET™

SMART START™

VCX™

OPTOPLANAR™

PACMAN™



The Power Franchise

ProgrammableActive Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I15

www.fairchildsemi.com

FDS6699S Rev. D

FDS6699S相关文章

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FDS6699S产品参数

型号:	FDS6699S
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
零件包装代码：	SOIC
包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8
制造商包装代码：	8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.31
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	21 A
最大漏极电流 (ID)：	21 A
最大漏源导通电阻：	0.0036 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2.5 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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