FDS7066SN3原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号FDS7066SN3的概述

芯片FDS7066SN3的概述 FDS7066SN3是一款典型的N沟道MOSFET（场效应晶体管），该器件常用于电源管理和信号开关等应用。随着电子设备的不断发展，对功率器件的性能要求也在不断提高。FDS7066SN3以其良好的电气特性和高效能在市场中占据了一席之地，特别是在便携式设备和电源管理电路中得到广泛应用。芯片FDS7066SN3的详细参数 FDS7066SN3的主要电气参数配置如下： 1. 最大漏极-源极电压 (V_DS): 30V 2. 最大源极-漏极电压 (V_SG): -20V 3. 最大漏极电流 (I_D): 15A 4. 直流电阻 (R_DS(on)): 0.040 Ω 5. 最大功耗 (P_D): 1.0W 6. 开启电压 (V_GS(th)): 1.8V 至 2.5V 7. 结温范围 (T_j): -55℃ 至 +150℃ 8. 频率范围: 可用于高频应用，工作...

产品型号FDS7066SN3的Datasheet PDF文件预览

January 2004

FDS7066SN3



30V N-Channel PowerTrench SyncFET^™

General Description

Features

The FDS7066SN3 is designed to replace a single SO-8

FLMP MOSFET and Schottky diode in synchronous

DC:DC power supplies. This 30V MOSFET is designed

to maximize power conversion efficiency, providing a

low R_DS(ON)and low gate charge. The FDS7066SN3

includes an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology. The performance of

• 19 A, 30 V

R_DS(ON)= 5.5 mΩ @ V_GS= 10 V

R_DS(ON)= 6.0 mΩ @ V_GS= 4.5 V

• High performance trench technology for extremely

low R_DS(ON)

the FDS7066SN3 as the low-side switch in

• High power and current handling capability

• Fast switching

synchronous rectifier is close to the performance of the

FDS7066N3 in parallel with a Schottky diode.

Applications

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

• DC/DC converter

• Motor drivesFeatures

Bottom-side

Drain Contact

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

Gate-Source Voltage

±16

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

3.0

1.7

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

0.5

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS7066SN3

13’’

12mm

2500 units

FDS7066SN3 Rev C2 (W)

2004 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

V_GS= 0 V, I_D= 1 mA

∆BVDSS

Breakdown Voltage Temperature

I_D= 10 mA, Referenced to 25°C

mV/°C

Coefficient

∆T_J

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate–Body Leakage

V_DS= 24 V, V_GS= 0 V

V_GS= ±16 V, V_DS= 0 V

500

±100

µA

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= 1 mA

I_D= 10 mA, Referenced to 25°C

1.4

–3

∆VGS(th)

Gate Threshold Voltage

mV/°C

mΩ

Temperature Coefficient

Static Drain–Source

On–Resistance

∆T_J

R_DS(on)

V_GS= 10 V, I_D= 19 A

4.5

5.0

5.5

6.0

8.0

V_GS= 4.5 V, I_D= 17.5 A

V_GS= 10 V, I_D= 19 A, T_J= 125°C

g_FS

Forward Transconductance

V_DS= 10 V, I_D= 19 A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_G

Input Capacitance

4740

825

300

1.4

Ω

_DS= 15 V, V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

f = 1.0 MHz

V_GS= 15 mV, f = 1.0 MHz

Switching Characteristics (Note 2)

V_DD= 15 V, I_D= 1 A,

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

136

V_GS= 10 V, R_GEN= 6 Ω

V_DS= 15 V, I_D= 19 A,

V_GS= 5.0 V

Q_g

Q_gs

Q_gd

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Schottky Diode Forward Current

Drain–Source Schottky Diode

4.3

0.7

V_SD

V_GS= 0 V, I_S= 4.3 A

(Note 2)

0.4

Forward Voltage

Reverse Recovery Time

I_F= 19 A

t_RR

26.6

diF/dt = 300 A/us

Q_RR

Reverse Recovery Charge

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

40°C/W when

85°C/W when mounted on

a minimum pad of 2 oz

copper

mounted on a 1in²pad

of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS7066SN3 Rev C2 (W)

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= 10V

3.0V

V_GS= 2.5V

3.0V

2.5V

4.5V

3.5V

4.0V

4.5V

6.0V

10V

2.0V

0.8

0.25

0.5

0.75

V_DS, DRAIN TO SOURCE VOLTAGE (V)

I_D, DIRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5

1.3

1.1

0.9

0.7

0.016

I_D= 19A

_GS= 10V

I_D= 9.5A

0.012

0.008

0.004

T_A= 125^oC

T_A= 25^oC

-50

-25

100

125

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation

withTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

V_DS= 5.0V

V_GS= 0V

T_A= 125^oC

25^oC

0.1

T_A= 125^oC

-55^oC

0.01

0.001

25^oC

0.0001

1.5

2.5

0.2

0.4

0.6

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS7066SN3 Rev C2 (W)

Typical Characteristics

6000

4500

3000

1500

f = 1 MHz

V_GS= 0 V

I_D= 19A

V_DS= 10V

C_iss

15V

20V

C_oss

C_rss

Q_g, GATE CHARGE (nC)

_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

R_DS(ON)LIMIT

100µs

SINGLE PULSE

_θJA= 85°C/W

1ms

_A= 25°C

10ms

100ms

V_GS= 10V

SINGLE PULSE

0.1

_θJA= 85^oC/W

T_A= 25^oC

0.01

0.1

100

0.01

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

_θJA(t) = r(t) + R_θJA

0.2

_θJA= 85^oC/W

0.1

0.05

P(pk)

0.02

t₁

t₂

0.01

_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.01

0.1

100 1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDS7066SN3 Rev C2 (W)

Typical Characteristics (continued)

SyncFET Schottky Body Diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in Schottky barrier diodes exhibit significant leakage at high

parallel with PowerTrench MOSFET. This diode exhibits temperature and high reverse voltage. This will increase

similar characteristics to a discrete external Schottky diode the power in the device.

in parallel with a MOSFET. Figure 12 shows the reverse

recovery characteristic of the FDS7066SN3.

0.1

T_A= 125^oC

T_A= 100^oC

0.01

0.001

0.0001

T_A= 25^oC

0.00001

V_DS, REVERSE VOLTAGE (V)

Figure 14. SyncFET body diode reverse leakage

versus drain-source voltage and temperature

12.5 nS/div

Figure 12. FDS7066SN3 SyncFET body

diode reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse

recovery characteristics of the body diode of an equivalent

size MOSFET produced without SyncFET (FDS7066N3).

12.5 nS/div

Figure 13. Non-SyncFET (FDS7066N3) body

diode reverse recovery characteristic.

FDS7066SN3 Rev C2 (W)

Dimensional Outline and Pad Layout

FDS7066SN3 Rev C1 (W)

2002 Fairchild Semiconductor Corporation

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

POP™

Stealth™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

FACT Quiet Series™

FAST

FASTr™

FPS™

FRFET™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

FACT™

Power247™

PowerSaver™

PowerTrench

QFET

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

QS™

GlobalOptoisolator™

GTO™

QT Optoelectronics™ TinyLogic

Quiet Series™

RapidConfigure™

RapidConnect™

TINYOPTO™

TruTranslation™

UHC™

HiSeC™

I²C™

ImpliedDisconnect™

SILENT SWITCHER UltraFET

OPTOLOGIC

OPTOPLANAR™

PACMAN™

Across the board. Around the world.™

The Power Franchise™

ProgrammableActive Droop™

SMART START™

SPM™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I8

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FDS7066SN3产品参数

型号:	FDS7066SN3
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.16
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	19 A
最大漏极电流 (ID)：	19 A
最大漏源导通电阻：	0.0055 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	3 W
最大脉冲漏极电流 (IDM)：	60 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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