FDS9926A各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDS9926A的概述

FDS9926A芯片概述 FDS9926A是一款专为高效电源管理和控制应用设计的功率MOSFET。这款芯片通常用于开关模式电源（SMPS）、DC-DC转换器和电池管理系统等电源电路中，它能够在较低的导通电阻下实现高效率的电流传输。由于其出色的热性能和电气特性，FDS9926A在现代电子设备的紧凑型设计中越来越受到青睐。 FDS9926A的详细参数 FDS9926A的主要参数包括其工作电压范围、导通电阻、驱动电池电流能力、功率损耗等。以下是该芯片的一些关键参数： - 最大工作电压：FDS9926A的最大漏极至源极电压（V_DS）通常在20V范围内，这使得它适用于供电较低的应用场合。 - 导通电阻（R_DS(on)）：在10V栅极驱动电压时，导通电阻通常为0.017Ω，能够显著降低功耗并提高电路的整体效率。 - 门极驱动电压（V_GS）：推荐的驱动电压范围在4.5V至10V，可以实现最佳的...

产品型号FDS9926A的Datasheet PDF文件预览

January 2000

PRELIMINARY

FDS9926A

Dual N-Channel 2.5V Specified PowerTrench MOSFET

Features

General Description

These N-Channel 2.5V specified MOSFETs use

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications with a wide range of gate drive voltage

(2.5V – 10V).

• 6.5 A, 20 V.

R_DS(ON)= 0.030 Ω @ V_GS= 4.5 V

R_DS(ON)= 0.043 Ω @ V_GS= 2.5 V.

• Optimized for use in battery protection circuits

±10 V_GSSallows for wide operating voltage range

•

Applications

• Low gate charge

• Battery protection

• Load switch

• Power management

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

±10

Drain Current – Continuous

– Pulsed

(Note 1a)

6.5

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

(Note 1c)

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS9926A

13’’

12mm

2500 units

FDS9926A Rev C (W)

1999 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

_GS= 0 V, I_D= 250 µA

∆BV^DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 µA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_DS= 16 V,

V_GS= 8 V,

V_GS= –8 V

V_GS= 0 V

V_DS= 0 V

µA

I_GSSF

I_GSSR

100

–100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

0.5

1.5

_DS= V_GS, I_D= 250 µA

∆V^GS(th)

∆T_J

R_DS(on)

Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source

On–Resistance

I_D= 250 µA, Referenced to 25°C

-3

mV/°C

V_GS= 4.5 V,

V_GS= 2.5 V,

V_GS= 4.5 V, I_D=6.5A, T_J=125°C

I_D= 6.5 A

I_D= 5.4 A

Ω

0.025 0.030

0.036 0.043

0.035 0.050

I_D(on)

g_FS

On–State Drain Current

V_GS= 4.5 V,

V_DS= 5 V

Forward Transconductance

V_DS= 5 V,

I_D= 3 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

700

175

V_DS= 10 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 2)}

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= 10 V,

V_GS= 4.5 V,

I_D= 1 A,

R_GEN= 6 Ω

Q_g

Q_gs

Q_gd

_DS= 10 V,

_GS= 4.5 V

I_D= 3A,

1.2

1.9

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

1.3

1.2

V_SD

Drain–Source Diode Forward

Voltage

V_GS= 0 V, I_S= 1.3 A

(Note 2)

0.65

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 78°/W when

b) 125°/W when

mounted on a 0.02

in²pad of 2 oz

copper

c) 135°/W when mounted on a

minimum pad.

mounted on a 0.5in²

pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS9926A Rev C (W)

Typical Characteristics

2.5

V_GS= 4.5V

3.0V

3.5V

2.5V

V_GS= 2.0V

2.0V

2.5V

3.0V

1.5

3.5V

4.0V

4.5V

1.5V

0.5

I_D, DRAIN CURRENT (A)

0.5

1.5

150

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.1

1.6

I_D= 3A

I_D= 1.5 A

_GS= 4.5V

0.08

0.06

0.04

0.02

1.4

1.2

T_A= 125^oC

0.8

0.6

T_A= 25^oC

-50

-25

100

125

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

T_A= -55^oC

V_DS= 5V

T_A= 125^oC

125^oC

25^oC

-55^oC

0.1

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

1.4

0.5

1.5

2.5

V_SD, BODY DIODE FORWARD VOLTAGE (V)

_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9926A Rev C (W)

Typical Characteristics

1000

800

600

400

200

V_DS= 5V

f = 1MHz

V_GS= 0 V

I_D= 3A

10V

15V

C_ISS

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

R_DS(ON)LIMIT

100µs

1ms

SINGLE PULSE

R_θJA= 135°C/W

10ms

100ms

T_A= 25°C

10s

V_GS= 10V

SINGLE PULSE

0.1

0.01

_θJA= 135^oC/W

T_A= 25^oC

0.1

100

0.001

0.01

0.1

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_θJA(t) = r(t) + R_θJA

0.2

R_θJA= 135°C/W

0.1

0.05

0.02

P(pk)

t₁

0.01

t₂

0.01

SINGLE PULSE

_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

0.001

0.0001

0.001

0.01

0.1

100 1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDS9926A Rev C (W)

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging

Configuration: Figure 1.0

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is

ELECTROSTATIC

SENSITIVE DEVICES

DO NO

RO NG

CTROS

ATIC

made from dissipative (carbon filled) polycarbonate

CTRO

AGN

AG NE

R R ADIO ACTIVE FI ELD S

TNR DATE

PT NUMB E

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

2,500 units per 13" or 330cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 500 units per 7" or

177cm diameter reel. This and some other options are

further described in the Packaging Information table.

PEEL STRENGTH MIN ______________gms

MAX _____________gms

Antistatic Cover Tape

ESD Label

These full reels are individually barcode labeled and

placed inside

a standard intermediate box (illustrated in

figure 1.0) made of recyclable corrugated brown paper.

One box contains two reels maximum. And these boxes

are placed inside

comes in different sizes depending on the number of parts

shipped.

a barcode labeled shipping box which

Static Dissipative

Embossed Carrier Tape

F63TNR

Label

NDS

9959

852

Customized

Label

Pin 1

SOIC (8lds) Packaging Information

Standard

L86Z

F011

D84Z

Packaging Option

(no flow code)

SOIC-8 Unit Orientation

Packaging type

TNR

2,500

Rail/Tube

TNR

4,000

TNR

500

Qty per Reel/Tube/Bag

Reel Size

13" Dia

7" Dia

Box Dimension (mm)

Max qty per Box

343x64x343 530x130x83 343x64x343 184x187x47

5,000

0.0774

0.6060

30,000

0.0774

8,000

0.0774

0.9696

1,000

0.0774

0.1182

Weight per unit (gm)

Weight per Reel (kg)

Note/Comments

343mm x 342mm x 64mm

Standard Intermediate box

ESD Label

F63TNR Label sample

F63TNLabel

ESD Label

F63TN Label

LOT: CBVK741B019

FSID: FDS9953A

QTY: 2500

SPEC:

D/C1: D9842

D/C2:

QTY1:

QTY2:

SPEC REV:

CPN:

N/F: F

(F63TNR)3

SOIC(8lds) Tape Leader and Trailer

Configuration: Figure 2.0

Carrier Tape

Cover Tape

Components

Trailer Tape

Leader Tape

640mm minimum or

80 empty pockets

1680mm minimum or

210 empty pockets

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC(8lds) Embossed Carrier Tape

Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg type

0.450

+/-

0.150

(8lds)

SOIC

(12mm)

6.50

+/-0.10

5.30

+/-0.10

12.0

+/-0.3

1.55

+/-0.05

1.60

+/-0.10

1.75

+/-0.10

10.25

min

5.50

+/-0.05

8.0

+/-0.1

4.0

+/-0.1

2.1

+/-0.10

9.2

+/-0.3

0.06

+/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

0.5mm

maximum

20 deg maximum

Typical

component

cavity

center line

0.5mm

maximum

20 deg maximum component rotation

Typical

component

center line

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Component Rotation

SOIC(8lds) Reel Configuration: Figure 4.0

W1 Measured at Hub

Dim A

Max

Dim A

max

See detail AA

Dim N

7"Diameter Option

B Min

Dim C

See detail AA

Dim D

min

13" Diameter Option

W2 max Measured at Hub

DETAIL AA

Dim W2

Dimensions are in inches and millimeters

Reel

Option

Tape Size

12mm

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W3 (LSL-USL)

7.00

177.8

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

2.165

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.469 – 0.606

11.9 – 15.4

7" Dia

13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

7.00

178

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.469 – 0.606

11.9 – 15.4

12mm

13" Dia

1998 Fairchild Semiconductor Corporation

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0774

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

SyncFET™

TinyLogic™

UHC™

CROSSVOLT™

E²CMOS^TM

VCX™

FACT™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. D

FDS9926A相关文章

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FDS9926A产品参数

型号:	FDS9926A
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	SOIC
包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8
制造商包装代码：	8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	3.31
Samacsys Confidence：	3
Samacsys Status：	Released
Samacsys PartID：	988789
Samacsys Pin Count：	8
Samacsys Part Category：	Integrated Circuit
Samacsys Package Category：	Small Outline Packages
Samacsys Footprint Name：	SOIC8
Samacsys Released Date：	2019-09-30 08:27:32
Is Samacsys：	N
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	6.5 A
最大漏极电流 (ID)：	6.5 A
最大漏源导通电阻：	0.03 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	2
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.6 W
最大脉冲漏极电流 (IDM)：	20 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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