FQA90N15各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FQA90N15的概述

芯片FQA90N15的概述 FQA90N15 是一款高性能的 N 沟道功率 MOSFET，广泛应用于电源转换、开关电源以及其他高频开关应用中。在现代电子设备中，功率MOSFET是至关重要的元件，因其能够以较低的导通损耗和高工作效率运行。FQA90N15 采用半导体材料制成，具有较大的电流处理能力和宽广的工作电压范围，以满足多种设备的需求。与其他功率MOSFET 相比，FQA90N15 的显著特点在于其优越的开关速度和高效率，能够在瞬态条件下快速响应，适用于开关频率较高的应用场合。由于其良好的功率特性，FQA90N15 在计算机电源、汽车电子和工业自动化等领域都有着广泛的应用前景。芯片FQA90N15的详细参数 FQA90N15 的主要参数如下： 1. 最大漏极电压 (Vds)：150V 2. 最大漏极电流 (Id)：90A 3. 最大功耗 (Pd)：94W 4. 栅源阈值电压 (V...

产品型号FQA90N15的Datasheet PDF文件预览

QFET

FQH90N15 / FQA90N15

N-Channel Power MOSFET

Features

Description

•

90A, 150V, R

= 0.018Ω @V = 10 V

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

DS(on)

Low gate charge (typical 220 nC)

Low C (typical 200 pF)

rss

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for low volt-

age applications such as audio amplifire, high efficiency switch-

ing for DC/DC converters, and DC motor control, uninterrupted

power supply.

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

! "

TO-247

TO-3P

FQH Series

FQA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FQH90N15/FQA90N15

Unit

Drain-Source Voltage

Drain Current

150

DSS

- Continuous (T = 25°C)

63.5

- Continuous (T = 100°C)

(Note 1)

(Note 2)

Drain Current

- Pulsed

360

±25

1400

Gate-Source voltage

GSS

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

37.5

6.0

V/ns

dv/dt

Power Dissipation

(T = 25°C)

- Derate above 25°C

375

2.5

W/°C

Operating and Storage Temperature Range

-55 to +175

°C

J, STG

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Min.

Max.

0.4

Unit

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

θJC

θCS

θJA

0.24

Thermal Resistance, Junction-to-Ambient

FQH90N15 / FQA90N15 Rev. B

www.fairchildsemi.com

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min. Typ. Max Units

Off Characteristics

Drain-Source Breakdown Voltage

= 0V, I = 250µA

150

DSS

∆BV

Breakdown Voltage Temperature

Coefficient

DSS

∆T

= 250µA, Referenced to 25°C

0.15

V/°C

Zero Gate Voltage Drain Current

= 150V, V = 0V

µA

DSS

= 120V, T = 150°C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 25V, V = 0V

100

GSSF

= -25V, V = 0V

-100

GSSR

On Characteristics

Gate Threshold Voltage

= V , I = 250µA

2.0

0.014

4.0

0.018

Ω

GS(th)

Static Drain-Source

On-Resistance

DS(on)

= 10V, I = 45A

(Note 4)

Forward Transconductance

= 40V, I = 45A

Dynamic Characteristics

Input Capacitance

= 25V, V = 0V,

6700

1400

200

8700

1800

260

iss

f = 1.0MHz

Output Capacitance

oss

rss

Reverse Transfer Capacitance

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

= 75V, I = 90A

= 25Ω

105

760

470

410

220

1500

950

830

285

d(on)

d(off)

(Note 4, 5)

= 120V, I = 90A

= 10V

110

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

360

1.5

Drain-Source Diode Forward Voltage

Reverse Recovery Time

= 0V, I = 90A

175

0.97

µC

dI /dt =100A/µs

(Note 4)

Reverse Recovery Charge

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.29mH, I = 90A, V = 25V, R = 25Ω, Starting T = 25°C

3. I ≤ 90A, di/dt ≤ 300A/µs, V ≤ BV

, Starting T = 25°C

DSS

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

www.fairchildsemi.com

FQH90N15 / FQA90N15 Rev. B

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

10²

Bottom : 4.5 V

10¹

10⁰

10^-1

175^oC

25^oC

10¹

-55^oC

Notes :

1. V_DS= 30V

Notes :

1. 250

2. T_C= 25^oC

s Pulse Test

2. 250

µs Pulse Test

10^-1

10⁰

10¹

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

0.12

10²

0.09

V_GS= 10V

10¹

10⁰

10^-1

0.06

V_GS= 20V

0.03

175^oC

0.4

25^oC

Notes :

1. V_GS= 0V

Note : T_J= 25^oC

2. 250µs Pulse Test

0.00

100

150

200

250

300

0.0

0.8

1.2

1.6

2.0

2.4

I_D, Drain Current [A]

V_SD, Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

18000

C_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

V_DS= 30V

V_DS= 75V

V_DS= 120V

C_rss= C_gd

15000

12000

C_iss

C_oss

9000

6000

Notes :

1. V_GS= 0 V

C_rss

2. f = 1 MHz

3000

Note : I_D= 90 A

200

10^-1

10⁰

10¹

100

150

250

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

www.fairchildsemi.com

FQH90N15 / FQA90N15 Rev. B

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

1.2

1.1

1.0

0.9

0.8

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Notes :

1. V_GS= 0 V

Notes :

1. V_GS= 10 V

2. I_D= 250

µA

2. I_D= 45 A

-100

-50

100

150

200

-100

-50

100

150

200

T_J, Junction Temperature [^oC]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

100

Operation in This Area

is Limited by R _DS(on)

10³

10 µs

100 µs

10²

10¹

10⁰

10^-1

1 ms

10 ms

Notes :

1. T_C= 25 ^o

2. T_J= 175 ^o

3. Single Pulse

10⁰

10¹

10²

100

125

150

175

T_C, Case Temperature [^oC]

V_DS, Drain-Source Voltage [V]

Figure 11. Transient Thermal Response Curve

D = 0 .5

N o te s

1 . Z _?_JC(t)

2 . D u ty F a c to r, D = t₁/t₂

1 0 ^-1

0 .4 ^oC /W M a x.

0 .2

3 . T _{J M}

T _C

P _{D M}* Z _{? JC}(t)

0 .1

0 .0 5

P_DM

0 .0 2

0 .0 1

1 0 ^-2

t₁

t₂

s in g le p u ls e

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]

www.fairchildsemi.com

FQH90N15 / FQA90N15 Rev. B

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

Q_g

12V

200nF

10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

LI_AS

V_DS

I_D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

www.fairchildsemi.com

FQH90N15 / FQA90N15 Rev. B

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

www.fairchildsemi.com

FQH90N15 / FQA90N15 Rev. B

Mechanical Dimensions

TO-247AD (FKS PKG CODE 001)

Dimensions in Millimeters

www.fairchildsemi.com

FQH90N15 / FQA90N15 Rev. B

Mechanical Dimensions (Continued)

TO-3P

15.60 ±0.20

13.60 ±0.20

4.80 ±0.20

+0.15

ø3.20 ±0.10

1.50

–0.05

9.60 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

1.40 ±0.20

+0.15

–0.05

0.60

5.45TYP

[5.45 ±0.30]

Dimensions in Millimeters

www.fairchildsemi.com

FQH90N15 / FQA90N15 Rev. B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

Power247™

PowerEdge™

PowerSaver™

PowerTrench

QFET

Stealth™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

FAST

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

QS™

QT Optoelectronics™ TinyLogic

HiSeC™

I²C™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

TINYOPTO™

TruTranslation™

UHC™

i-Lo™

ImpliedDisconnect™

FACT Quiet Series™

UltraFET

OPTOLOGIC

OPTOPLANAR™

PACMAN™

POP™

SILENT SWITCHER UniFET™

Across the board. Around the world.™

The Power Franchise

ProgrammableActive Droop™

SMART START™

SPM™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I14

FQA90N15相关文章

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FQA90N15产品参数

型号:	FQA90N15
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	TO-3PN
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
制造商包装代码：	3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.2
Is Samacsys：	N
雪崩能效等级（Eas）：	1400 mJ
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	150 V
最大漏极电流 (Abs) (ID)：	90 A
最大漏极电流 (ID)：	90 A
最大漏源导通电阻：	0.018 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	375 W
最大脉冲漏极电流 (IDM)：	360 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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