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产品型号FQP65N06的概述

FQP65N06概述 FQP65N06是一款著名的N沟道功率 MOSFET（场效应晶体管），广泛应用于各种电子设备和电力电子电路中。这种类型的MOSFET凭借其优异的开关速度和低导通电阻，成为当今市场上最受欢迎的功率开关选择之一。FQP65N06能够承受高电压和高电流，使其适用于电源管理、马达驱动和其他高功率应用。 FQP65N06的命名方式中，“65”表示其最大漏极电流值，而“06”则 обозначает максимальное значение напряжение утечки в 60V。这种结合使其在创新电子应用中的适用性得以提升，如LED驱动和开关电源转换器。 FQP65N06详细参数在具体参数方面，FQP65N06具有以下重要特性： 1. 最大漏极-源极电压（Vds）: 60V 2. 最大漏极电流（Id）: 65A（在适当的散热条件下） 3. 最大脉冲漏极电流（I...

产品型号FQP65N06的Datasheet PDF文件预览

May 2001

QFET

FQP65N06

60V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, DC/

DC converters, and high efficiency switching for power

management in portable and battery operated products.

•

65A, 60V, R

= 0.016Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 48 nC)

Low Crss ( typical 100 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

! "

TO-220

FQP Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP65N06

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

46.1

260

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 25

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

650

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

15.0

7.0

V/ns

dv/dt

Power Dissipation (T = 25°C)

150

- Derate above 25°C

Operating and Storage Temperature Range

1.00

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

1.00

Units

°C/W

θJC

θCS

θJA

0.5

62.5

Rev. A1. May 2001

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

= 0 V, I = 250 µA

GS D

Drain-Source Breakdown Voltage

DSS

∆BV

Breakdown Voltage Temperature

Coefficient

DSS

= 250 µA, Referenced to 25°C

0.07

V/°C

∆T

= 60 V, V = 0 V

µA

DSS

Zero Gate Voltage Drain Current

= 48 V, T = 150°C

= 25 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

100

-100

GSSF

= -25 V, V = 0 V

GSSR

On Characteristics

= V , I = 250 µA

Gate Threshold Voltage

2.0

4.0

Ω

GS(th)

Static Drain-Source

On-Resistance

DS(on)

=10V,I =32.5A

0.012 0.016

= 25 V, I = 32.5 A

(Note 4)

Forward Transconductance

Dynamic Characteristics

Input Capacitance

1850

700

2410

910

iss

= 25 V, V = 0 V,

Output Capacitance

oss

rss

f = 1.0 MHz

Reverse Transfer Capacitance

100

130

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

160

330

190

220

d(on)

= 30 V, I = 32.5 A,

= 25 Ω

d(off)

(Note 4, 5)

105

= 48 V, I = 65 A,

= 10 V

19.5

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

260

1.5

Maximum Pulsed Drain-Source Diode Forward Current

= 0 V, I = 65 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

= 0 V, I = 65 A,

110

dI / dt = 100 A/µs

(Note 4)

Reverse Recovery Charge

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 180µH, I = 65A, V = 25V, R = 25 Ω, Starting T = 25°C

3. I ≤ 65A, di/dt ≤ 300A/µs, V

≤ BV Starting T = 25°C

DSS, J

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Rev. A1. May 2001

Typical Characteristics

Top :

15.0^GV^S

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

10²

10¹

10⁰

Bottom: 4.5 V

℃

175

℃

※

Notes :

※

Notes :

1. 250 s Pulse Test

2. T_C= 25

1. V = 25V

^DSμ

℃

2. 250 s Pulse Test

℃

-55

-1

V_DS, Drain-Source Voltage [V]

V_GS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

10²

10¹

10⁰

V_GS= 10V

V_GS= 20V

※

Notes :

℃

175

℃

1. V = 0V

2. 250 s Pulse Test

※

℃

^GSμ

Note : T = 25

100

150

200

250

300

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

I_D, Drain Current [A]

V , Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

5000

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C

C_rss= C

V_DS= 30V

V_DS= 48V

4000

3000

2000

1000

oss

※

Notes :

iss

1. V_GS= 0 V

2. f =1 MHz

rss

※

Note : I_D= 65A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Rev. A1. May 2001

Typical Characteristics (Continued)

1.2

1.1

1.0

2.5

2.0

1.5

1.0

0.5

0.0

※

Notes :

1. V_GS= 0 V

0.9

0.8

※

Notes :

2. I_D= 250

1. V_GS= 10 V

2. I_D=32.5A

-100

-50

100

150

200

-100

-50

100

150

200

T, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

10³

10²

10¹

10⁰

Operation in This Area

is Limited by R_DS(on)

100 µs

1 ms

10 ms

※

Notes :

1. T_C= 25 ^o

2. T = 175 ^o

3. Single Pulse

10^-1

10⁰

10¹

10²

100

125

150

175

℃

T_C, Case Temperature [

]

V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

1 0 ⁰

D = 0 .5

※

N o t e s

0 .2

℃

/W M a x.

1 . Z _θ_C(t )

1 .0 0

2 . D u t y Fa c t o r , D = t ₁/t ₂

0 .1

1 0 ^-1

3 . T _{J M}

T_C

P _{D M}* Z _θ_C(t )

0 .0 5

P_DM

0 .0 2

t₁

0 .0 1

t₂

s in g le p u ls e

1 0 ^-2

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁

, S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

Rev. A1. May 2001

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50Kꢀ

as DUT

Q_g

12V

200nF

10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

L I_AS

V_DS

I _D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

Rev. A1. May 2001

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Rev. A1. May 2001

Package Dimensions

TO-220

4.50 ±0.20

9.90 ±0.20

(8.70)

+0.10

–0.05

1.30

ø3.60 ±0.10

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54TYP

[2.54 ±0.20]

10.00 ±0.20

Rev. A1. May 2001

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

SuperSOT™-3

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FAST^®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

OPTOPLANAR™

PACMAN™

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

POP™

PowerTrench^®

QFET™

HiSeC™

QS™

UltraFET^®

VCX™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER^®

SMART START™

Stealth™

FACT™

FACT Quiet Series™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H2

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