GMF05C-HS3-GS08中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

GMF05C-HS3

Vishay Semiconductors

5-Line ESD Protection Diode Array in LLP75-6A

Features

• Ultra compact LLP75-6A package

• 5-line ESD-protection

• Surge immunity acc.

6

1

5

4

3

IEC 61000-4-5 I

> 12 A

PPM

• Low leakage current I < 1 µA

R

• ESD-immunity acc. IEC 61000-4-2

30 kV contact discharge

2

30 kV air discharge

19957

1

19956

• Working voltage range V

= 5 V

RWM

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Marking (example only)

Dot = Pin 1 marking

XX = Date code

YY = Type code (see table below)

XX

YY

21001

Ordering Information

Taped units per reel

(8 mm tape on 7" reel)

Device name

Ordering code

Minimum order quantity

15000

GMF05C-HS3

GMF05C-HS3-GS08

3000

Package Data

Molding

compound

flammability rating

Package

name

Type

code

Device name

GMF05C-HS3

Weight

5.2 mg

Moisture sensitivity level

Soldering conditions

LLP75-6A

F5

UL 94 V-0

MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

* Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902

Document Number 85654

Rev. 1.8, 23-Sep-08

www.vishay.com

1

For technical support, please contact: ESD-Protection@vishay.com

GMF05C-HS3

Vishay Semiconductors

Absolute Maximum Ratings

Rating

Test condition

Symbol

I_PPM

Value

12

Unit

A

BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2);

acc. IEC 61000-4-5; t_p= 8/20 µs; single shot

Peak pulse current

Peak pulse power

BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2);

acc. IEC 61000-4-5; t_p= 8/20 µs; single shot

P_PP

V_ESD

200

30

W

kV

contact

discharge

acc. IEC61000-4-2; 10 pulses

BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2)

ESD immunity

air

discharge

30

T_J

Operating temperature

Storage temperature

Junction temperature

- 55 to + 125

- 55 to + 150

°C

T_STG

BiAs-Mode (5-line Bidirectional Asymmetrical protection mode)

With the GMF05C-HS3 up to 5 signal- or data-lines (L1 - L5) can be protected against voltage transients. With

pin 2 connected to ground and pin 1; 3 up tp pin 6 connected to a signal- or data-line which has to be protected.

As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum

Reverse Working Voltage (V

) the protection diode between data line and ground offer a high isolation to

RWM

the ground line. The protection device behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection

diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device

behaves like a closed switch. The Clamping Voltage (V ) is defined by the BReakthrough Voltage (V ) level

C

BR

plus the voltage drop at the series impedance (resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the

forward direction of the protection diode. The low Forward Voltage (V ) clamps the negative transient close to

F

the ground level.

Due to the different clamping levels in forward and reverse direction the GMF05C-HS3 clamping behaviour is

Bidirectional and Asymmetrical (BiAs).

L1

L2

L5

L4

L3

1

2

5

4

3

20739

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2

Document Number 85654

Rev. 1.8, 23-Sep-08

For technical support, please contact: ESD-Protection@vishay.com

GMF05C-HS3

Vishay Semiconductors

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

GMF05C-HS3

BiAs mode: each input (pin 1; 3 - pin 6) to ground (pin 2)

Parameter

Protection paths

Test conditions/remarks

number of line which can be protected

at I_R= 1 µA

Symbol

N lines

V_RWM

I_R

Min.

5

Typ.

< 0.1

7.8

Max.

5

Unit

lines

V

Reverse working voltage

Reverse current

at V_R= V_RWM= 5 V

1

8

µA

V

at I_R= 1 mA

V_BR

V_C

Reverse breakdown voltage

6

at I_PP= 12 A acc. IEC 61000-4-5

at I_PP= 1 A acc. IEC 61000-4-5

at I_F= 12 A acc. IEC 61000-4-5

at I_PP= 1 A acc. IEC 61000-4-5

at V_R= 0 V; f = 1 MHz

12.5

9.5

5.5

V

Reverse clamping voltage

Forward clamping voltage

Capacitance

V_C

V

V_F

V

V_F

1.5

126

76

V

C_D

150

pF

at V_R= 2.5 V; f = 1 MHz

C_D

If a higher surge current or Peak Pulse current (I ) is needed, some protection diodes in the GMF05C-HS3

PP

can also be used in parallel in order to "multiply" the performance.

If two diodes are switched in parallel you get

•

double surge power = double peak pulse current (2 x I

half of the line inductance = reduced clamping voltage

half of the line resistance = reduced clamping voltage

)

PPM

double line Capacitance (2 x C )

D

double Reverse leakage current (2 x I )

R

L1

L2

L3

1

2

3

6

5

4

20740

Document Number 85654

Rev. 1.8, 23-Sep-08

www.vishay.com

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For technical support, please contact: ESD-Protection@vishay.com

GMF05C-HS3

Vishay Semiconductors

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

100

10

120 %

BiAs-mode

Rise time = 0.7 ns to 1 ns

100 %

80 %

1

60 %

53 %

0.1

40 %

27 %

0.01

20 %

0.001

0 %

0.5

0.6

0.7

0.8

0.9

- 10 0 10 20 30 40 50 60 70 80 90 100

21205

V_F(V)

20557

Time (ns)

Figure 1. ESD Discharge Current Wave Form

Figure 4. Typical Forward Current I_Fvs. Forward Voltage V_F

acc. IEC 61000-4-2 (330 Ω/150 pF)

7

6

5

8 µs to 100 %

100 %

80 %

60 %

40 %

20 %

4

3

2

1

0

BiAs-mode

20 µs to 50 %

0 %

0.01 0.1

1

10

100 1000 10000

0

10

20

30

40

20548

Time (µs)

I_R(µA)

21206

Figure 2. 8/20 µs Peak Pulse Current Wave Form

(acc. IEC 61000-4-5)

Figure 5. Typical Reverse Voltage V_Rvs.

Reverse Current I_R

140

14

f = 1 MHz

120

BiAs-mode

12

100

80

60

40

20

0

BiAs-mode

10

8

6

V_C

Measured

acc. IEC 61000-4-5

(8/20 µs - wave form)

4

2

0

1

2

3

4

5

6

0

2

4

6

8

10 12 14 16

21204

21207

V_R(V)

I_PP(A)

Figure 3. Typical Capacitance C_Dvs. Reverse Voltage V_R

Figure 6. Typical Peak Clamping Voltage V_Cvs.

Peak Pulse Current I_PP

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Document Number 85654

Rev. 1.8, 23-Sep-08

For technical support, please contact: ESD-Protection@vishay.com

GMF05C-HS3

Vishay Semiconductors

80

60

acc. IEC 61000-4-2

+ 8 kV

contact discharge

40

20

0

- 20

- 40

- 60

- 10

0

10 20 30 40 50 60 70 80 90

21208

t (ns)

Figure 7. Typical Clamping Performance at + 8 kV

Contact Discharge (acc. IEC 61000-4-2)

60

acc. IEC 61000-4-2

- 8 kV

40

20

contact discharge

0

- 20

- 40

- 60

- 80

- 10

0

10 20 30 40 50 60 70 80 90

21209

t (ns)

Figure 8. Typical Clamping Performance at - 8 kV

Contact Discharge (acc. IEC 61000-4-2)

250

200

negative

discharge

150

100

50

V_C-ESD

0

- 50

- 100

- 150

- 200

- 250

positive

discharge

acc. IEC 61000-4-2

contact discharge

0

5

10

15

20

25

30

21210

V_ESD(kV)

Figure 9. Typical Peak Clamping Voltage at ESD

Contact Discharge (acc. IEC 61000-4-2)

Document Number 85654

Rev. 1.8, 23-Sep-08

www.vishay.com

5

For technical support, please contact: ESD-Protection@vishay.com

GMF05C-HS3

Vishay Semiconductors

Package Dimensions in millimeters (inches): LLP75-6A

18058

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6

Document Number 85654

Rev. 1.8, 23-Sep-08

For technical support, please contact: ESD-Protection@vishay.com

GMF05C-HS3

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,

and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 85654

Rev. 1.8, 23-Sep-08

www.vishay.com

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For technical support, please contact: ESD-Protection@vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

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1

型号:	GMF05C-HS3-GS08
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	VISHAY INTERTECHNOLOGY INC
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	5.77
Is Samacsys：	N
最大钳位电压：	12.5 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：	e3
湿度敏感等级：	1
极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	5 V
子类别：	Transient Suppressors
表面贴装：	YES
端子面层：	Matte Tin (Sn)
Base Number Matches：	1

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