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  • GP1S036HEZ图
  • 深圳市硕丰泰科技有限公司

     该会员已使用本站10年以上
  • GP1S036HEZ 现货库存
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  • 深科创(香港)科技有限公司

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  • 深圳市毅创腾电子科技有限公司

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  • 深圳市华芯盛世科技有限公司

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  • 北京元坤伟业科技有限公司

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  • 深圳市华斯顿电子科技有限公司

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产品型号GP1S036HEZ的概述

芯片GP1S036HEZ的概述 GP1S036HEZ是一种光电传感器,广泛应用于各种工业自动化和电子设备中的检测和测量应用。其独特的设计使其在复杂的环境中仍能保持高效的性能。该传感器通过内置的发射二极管和光电接收器,能够有效地检测物体的存在与运动,从而在自动化系统、家电及其他电子设备中发挥重要作用。 GP1S036HEZ的工作原理基于光电效应。当发射二极管发出光线并照射到目标物体上时,物体反射或者遮挡光线的变化就将被光电接收器捕捉到,从而实现对物体的检测。这种非接触式检测的方式不仅提高了测量的准确性,同时也降低了机械磨损,增加了设备的可靠性。 GP1S036HEZ的详细参数 GP1S036HEZ的参数设计使其具备适应不同工作条件的能力。以下是该芯片的主要技术参数: - 发射波长:940 nm - 接收光电流:0.5 mA(最小值) - 工作电源电压:Vcc = 4.5V至6.5V - ...

产品型号GP1S036HEZ的Datasheet PDF文件预览

GP1S036HEZ  
Photointerrupter for Detecting  
Tilt Direction  
GP1S036HEZ  
I Outline Dimensions  
I Features  
(Unit : mm)  
1. Subminiature  
Internal connection diagram  
3
2
(with built-in super compact ball for detecting tilt direction)  
2. 2-phase output type (4  
Top View  
PT2  
PT1  
4
3. Able to detect the tilt direction of both side ( 90˚) by the  
position of rolling ball.  
5
1
4. High reliability due to non-contact structure  
1
4
5
Anode  
Emitter1  
Collector  
2
3
Cathode  
Emitter2  
4.6  
or show GATE Position  
4.5  
I Applications  
1. Digital cameras  
2. Camcoders  
1 3  
I Absolute Maximum Ratings  
(Ta=25˚C)  
Parameter  
Forward current  
Symbol  
Rating  
Unit  
mA  
V
IF  
VR  
P
50  
Input Reverse voltage  
Power dissipation  
6
0.4  
0.15  
3.35  
1.27  
1.27  
mW  
75  
VCE  
VCE  
Collector-emitter  
voltage  
O
O
1
2
V
V
35  
6
Unspecified tolerance : 0.2mm  
The dimensions indicated by refer to  
those measured from the lead base.  
Burr is not included in the dimensions.  
Burr's dimensions : 0.15MAX.  
5
4
3
1
2
VE  
VE  
Emitter-collector  
CO  
CO  
1
2
Output  
voltage  
Collector current  
Collector Power dissipation  
IC  
mA  
mW  
mW  
˚C  
20  
75  
PC  
Total power dissipation  
Operating temperature  
Ptot  
Topr  
Tstg  
Tsol  
100  
25 to +85  
40 to +100  
260  
˚C  
Storage temperature  
*1 Soldering temperature 1  
*1 For MAX. 5s  
˚C  
1mmMIN.  
Soldering area  
Notice  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP  
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/  
GP1S036HEZ  
I Electro-optical Characteristics  
(Ta=25˚C)  
Parameter  
Symbol  
Conditions  
IF=20mA  
VR=3V  
MIN.  
TYP. MAX.  
Unit  
V
Forward voltage  
Input  
VF  
IR  
1.2  
1.4  
10  
Reverse current  
µA  
nA  
µA  
µA  
µs  
µs  
V
*3 Output  
Collector dark current  
Collector current  
*4 Leak current  
ICEO  
IC  
ILEAK  
tr  
VCE=20V  
100  
300  
17  
VCE=5V, IF=5mA  
VCE=5V, IF=5mA  
VCE=5V, IC=100µA  
RL=1kΩ  
55  
*3  
Coupling  
Rise time  
Fall time  
50  
50  
150  
150  
0.4  
Characteristics  
Response time  
tf  
Collector-emitter saturation voltage VCE(sat)  
IF=10mA, IC=55µA  
*3 Output and coupling characteristics are common to the both phototransistors  
*4 Characteristics except leak current is measured at θ=180˚, φ=0˚  
Leak current is the output current of transistor when θ= 90˚, φ=0˚ and IC=OFF  
I Detecting Angle Characteristics  
Device state diagram  
0˚  
30˚  
OFF  
*5  
60˚  
120˚  
150˚  
210˚  
ON  
*5  
θ
IC1  
*5  
+
+
φ
θ
OFF  
240˚  
ON  
IC2  
ON  
300˚  
330˚  
360˚  
θ
IC1  
*5  
OFF  
*5  
IC2  
OFF  
Conditions : IF=5mA, VCE=5V, φ= 5˚  
*5 Indefinite  
PT  
GL  
IC1 : Output current of phototransistors PT1  
IC2 : Output current of phototransistors PT2  
θ : Device condition : Refer to the figure  
φ : Device condition : Refer to the figure  
Gravity direction  
Gravity direction  
(Viewing from detecting side)  
ON :Output current of phototransistors : 55µA or more  
OFF : Output current of phototransistors : 17µA or less  
Output current of ON/OFF is output when device is at a standstill  
I Supplement  
(Viewing from detecting side)  
Gravity direction  
PT1  
PT2  
PT1  
PT2  
PT1 output  
PT2 output  
(ON)  
(ON)  
(ON)  
(OFF)  
(OFF)  
(OFF)  
(ON)  
(ON)  
PT : Detecting  
PT : Opaque  
(OFF)  
(ON)  
GP1S036HEZ  
Fig.2 Power Dissipation vs. Ambient  
Fig.1 Forward Current vs. Ambient  
Temperature  
Temperature  
120  
60  
Ptot  
100  
50  
40  
30  
20  
P, PC  
80  
60  
40  
20  
0
10  
0
25  
0
25  
50  
75 85 100  
25  
0
25  
50  
75 85 100  
Ambient temperature Ta (˚C)  
Ambient temperature Ta (˚C)  
NOTICE  
The circuit application examples in this publication are provided to explain representative applications of SHARP  
devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes  
no responsibility for any problems related to any intellectual property right of a third party resulting from the use of  
SHARP's devices.  
Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP  
reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents  
described herein at any time without notice in order to improve design or reliability. Manufacturing locations are  
also subject to change without notice.  
Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage  
caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used  
specified in the relevant specification sheet nor meet the following conditions:  
(i) The devices in this publication are designed for use in general electronic equipment designs such as:  
--- Personal computers  
--- Office automation equipment  
--- Telecommunication equipment [terminal]  
--- Test and measurement equipment  
--- Industrial control  
--- Audio visual equipment  
--- Consumer electronics  
(ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when  
SHARP devices are used for or in connection with equipment that requires higher reliability such as:  
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)  
--- Traffic signals  
--- Gas leakage sensor breakers  
--- Alarm equipment  
--- Various safety devices, etc.  
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of  
reliability and safety such as:  
--- Space applications  
--- Telecommunication equipment [trunk lines]  
--- Nuclear power control equipment  
--- Medical and other life support equipment (e.g., scuba).  
Contact a SHARP representative in advance when intending to use SHARP devices for any "specific" applications  
other than those recommended by SHARP or when it is unclear which category mentioned above controls the  
intended use.  
If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign  
Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export such SHARP devices.  
This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright  
laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written  
permission is also required before any use of this publication may be made by a third party.  
Contact and consult with a SHARP representative if there are any questions about the contents of this publication.  
配单直通车
GP1S036HEZ产品参数
型号:GP1S036HEZ
是否Rohs认证: 符合
生命周期:Obsolete
Reach Compliance Code:unknown
风险等级:5.84
其他特性:HIGH RELIABILITY
Coll-Emtr Bkdn Voltage-Min:35 V
配置:COMMON COLLECTOR, 2 ELEMENTS
最大暗电源:100 nA
最大正向电流:0.05 A
功能数量:1
标称通态集电极电流:0.055 mA
最高工作温度:85 °C
最低工作温度:-25 °C
光电设备类型:TRANSISTOR OUTPUT SLOTTED SWITCH
Base Number Matches:1
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