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产品型号HIP6302CBZA的Datasheet PDF文件预览

HIP6302  
®
Data Sheet  
December 27, 2004  
FN4766.3  
Microprocessor CORE Voltage Regulator  
Multi-Phase Buck PWM Controller  
Features  
• Multi-Phase Power Conversion  
The HIP6302 multi-phase PWM control IC together with its  
companion gate drivers, the HIP6601, HIP6602 or HIP6603  
and Intersil MOSFETs provides a precision voltage  
• Precision Channel Current Sharing  
- Loss Less Current Sampling - Uses r  
DS(ON)  
• Precision CORE Voltage Regulation  
regulation system for advanced microprocessors. Multiphase  
power conversion is a marked departure from earlier single  
phase converter configurations previously employed to  
satisfy the ever increasing current demands of modern  
microprocessors. Multi-phase convertors, by distributing the  
power and load current results in smaller and lower cost  
transistors with fewer input and output capacitors. These  
reductions accrue from the higher effective conversion  
frequency with higher frequency ripple current due to the  
phase interleaving process of this topology. For example, a  
two phase convertor operating at 350kHz will have a ripple  
frequency of 700kHz. Moreover, greater convertor bandwidth  
of this design results in faster response to load transients.  
- ±1% System Accuracy Over Temperature  
• Microprocessor Voltage Identification Input  
- 5-Bit VID Input  
- 1.100V to 1.850V in 25mV Steps  
- Programmable “Droop” Voltage  
• Fast Transient Recovery Time  
• Over Current Protection  
• High Ripple Frequency, (Channel Frequency) Times  
Number Channels . . . . . . . . . . . . . . . . . .100kHz to 3MHz  
Pb-Free Available (RoHS Compliant)  
Outstanding features of this controller IC include  
programmable VID codes from the microprocessor that  
range from 1.100V to 1.850V with a system accuracy of  
±1%. Pull up currents on these VID pins eliminates the need  
for external pull up resistors. In addition “droop”  
compensation, used to reduce the overshoot or undershoot  
of the CORE voltage, is easily programmed with a single  
resistor.  
Ordering Information  
o
PART NUMBER TEMP. ( C)  
PACKAGE  
PKG. DWG. #  
M16.15  
HIP6302CB  
0 to 70  
0 to 70  
16 Ld SOIC  
HIP6302CBZ  
(See Note)  
16 Ld SOIC  
(Pb-Free)  
M16.15  
HIP6302CBZA  
(See Note)  
0 to 70  
16 Ld SOIC  
(Pb-Free)  
M16.15  
Another feature of this controller IC is the PGOOD monitor  
circuit which is held low until the CORE voltage increases,  
during its Soft-Start sequence, to within 10% of the  
programmed voltage. Over-voltage, 15% above programmed  
CORE voltage, results in the converter shutting down and  
turning the lower MOSFETs ON to clamp and protect the  
microprocessor. Under voltage is also detected and results  
in PGOOD low if the CORE voltage falls 10% below the  
programmed level. Over-current protection reduces the  
regulator current to less than 25% of the programmed trip  
value. These features provide monitoring and protection for  
the microprocessor and power system.  
HIP6302EVAL1  
Evaluation Platform  
*Add “-T” suffix to part number for tape and reel packaging.  
NOTE: Intersil Pb-free products employ special Pb-free material sets; molding  
compounds/die attach materials and 100% matte tin plate termination finish,  
which are RoHS compliant and compatible with both SnPb and Pb-free  
soldering operations. Intersil Pb-free products are MSL classified at Pb-free  
peak reflow temperatures that meet or exceed the Pb-free requirements of  
IPC/JEDEC J STD-020.  
Pinout  
HIP6302 (SOIC)  
TOP VIEW  
VID4  
VID3  
1
2
3
4
5
6
7
8
16 V  
CC  
15 PGOOD  
14 ISEN1  
13 PWM1  
12 PWM2  
11 ISEN2  
10 VSEN  
VID2  
VID1  
VID0  
COMP  
FB  
FS/DIS  
9
GND  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2003-2004. All Rights Reserved  
All other trademarks mentioned are the property of their respective owners.  
HIP6302  
Block Diagram  
V
PGOOD  
CC  
POWER-ON  
RESET (POR)  
VSEN  
+
-
THREE  
STATE  
UV  
OV  
LATCH  
X 0.9  
CLOCK AND  
S
SAWTOOTH  
GENERATOR  
FS/EN  
+
OVP  
-
X1.15  
+
+
-
SOFT-  
START  
AND FAULT  
LOGIC  
PWM  
PWM1  
-
COMP  
VID0  
VID1  
VID2  
VID3  
VID4  
+
+
-
PWM  
PWM2  
-
D/A  
+
E/A  
-
CURRENT  
FB  
CORRECTION  
I_TOT  
+
ISEN1  
ISEN2  
+
OC  
-
+
I_TRIP  
GND  
FN4766.3  
December 27, 2004  
2
HIP6302  
Simplified Power System Diagram  
VSEN  
SYNCHRONOUS  
RECTIFIED BUCK  
CHANNEL  
PWM 1  
HIP6302  
MICROPROCESSOR  
SYNCHRONOUS  
RECTIFIED BUCK  
CHANNEL  
PWM 2  
VID  
GND (Pin 9)  
Functional Pin Description  
Bias and reference ground. All signals are referenced to this  
pin.  
VID4  
VID3  
1
2
3
4
5
6
7
8
16  
V
CC  
15 PGOOD  
14 ISEN1  
13 PWM1  
12 PWM2  
11 ISEN2  
10 VSEN  
VSEN (Pin 10)  
VID2  
Power good monitor input. Connect to the microprocessor-  
CORE voltage.  
VID1  
VID0  
ISEN2 (Pin 11) and ISEN1 (Pin 14)  
COMP  
FB  
Current sense inputs from the individual converter channel’s  
phase nodes.  
FS/DIS  
9
GND  
PWM2 (Pin 12) and PWM1 (Pin 13)  
PWM outputs for each driven channel in use. Connect these  
pins to the PWM input of a HIP6601/2/3 driver.  
VID4 (Pin 1), VID3 (Pin 2), VID2 (Pin 3), VID1 (Pin 4)  
and VID0 (Pin 5)  
PGOOD (Pin 15)  
Voltage Identification inputs from microprocessor. These pins  
respond to TTL and 3.3V logic signals. The HIP6302 decodes  
VID bits to establish the output voltage. See Table 1.  
Power good. This pin provides a logic-high signal when the  
microprocessor CORE voltage (VSEN pin) is within specified  
limits and Soft-Start has timed out.  
COMP (Pin 6)  
V
(Pin 16)  
Output of the internal error amplifier. Connect this pin to the  
external feedback and compensation network.  
CC  
Bias supply. Connect this pin to a 5V supply.  
FB (Pin 7)  
Inverting input of the internal error amplifier.  
FS/DIS (Pin 8)  
Channel frequency, F , select and disable. A resistor from  
SW  
this pin to ground sets the switching frequency of the  
converter. Pulling this pin to ground disables the converter  
and three states the PWM outputs. See Figure 10.  
FN4766.3  
3
December 27, 2004  
HIP6302  
Typical Application - Two Phase Converter Using HIP6601 Gate Drivers  
+12V  
V
= +5V  
IN  
BOOT  
PVCC  
VCC  
UGATE  
PHASE  
DRIVER  
HIP6601  
+5V  
PWM  
LGATE  
GND  
COMP  
FB  
+V  
CORE  
V
CC  
VSEN  
+12V  
PWM2  
ISEN2  
PGOOD  
V
= +5V  
IN  
BOOT  
VID4  
VID3  
VID2  
VID1  
VID0  
PVCC  
VCC  
MAIN  
CONTROL  
HIP6302  
UGATE  
PHASE  
DRIVER  
HIP6601  
PWM  
PWM1  
LGATE  
GND  
FS/DIS  
ISEN1  
GND  
FN4766.3  
December 27, 2004  
4
HIP6302  
Typical Application - Two Phase Converter Using a HIP6602 Gate Driver  
+5V  
V
= +12V  
IN  
+12V  
BOOT1  
UGATE1  
PHASE1  
FB  
COMP  
V
L
01  
VCC  
CC  
VSEN  
ISEN1  
PWM1  
LGATE1  
PVCC  
PGOOD  
VID4  
PWM1  
+V  
CORE  
DUAL  
DRIVER  
HIP6602  
MAIN  
+5V  
VID3  
CONTROL  
HIP6302  
V
+12V  
IN  
VID2  
VID1  
VID0  
BOOT2  
PWM2  
UGATE2  
PHASE2  
PWM2  
L
02  
ISEN2  
FS/DIS  
LGATE2  
GND  
GND  
FN4766.3  
December 27, 2004  
5
HIP6302  
Absolute Maximum Ratings  
Thermal Information  
o
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7V  
Input, Output, or I/O Voltage . . . . . . . . . . GND -0.3V to V + 0.3V  
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class TBD  
Thermal Resistance (Typical, Note 1)  
θ
( C/W)  
JA  
CC  
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .150 C  
Maximum Storage Temperature Range. . . . . . . . . . -65 C to 150 C  
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300 C  
70  
o
o
o
o
Recommended Operating Conditions  
(SOIC - Lead Tips Only)  
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5V ±5%  
Ambient Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . 0 C to 70 C  
o
o
CAUTION: Stress above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational section of this specification is not implied.  
NOTE:  
1. θ is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.  
JA  
o
o
Electrical Specifications Operating Conditions: V = 5V, T = 0 C to 70 C, Unless Otherwise Specified  
CC  
A
PARAMETER  
INPUT SUPPLY POWER  
Input Supply Current  
TEST CONDITIONS  
MIN  
TYP MAX UNITS  
R
= 100k, Active and Disabled Maximum Limit  
-
10  
15  
4.5  
mA  
V
T
POR (Power-On Reset) Threshold  
V
V
Rising  
Falling  
4.25  
3.75  
4.38  
3.88  
CC  
CC  
4.00  
V
REFERENCE AND DAC  
System Accuracy  
Percent system deviation from programmed VID Codes  
DAC Programming Input Low Threshold Voltage  
DAC Programming Input High Threshold Voltage  
VIDx = 0V or VIDx = 3V  
-1  
-
-
-
1
0.8  
-
%
V
DAC (VID0 - VID4) Input Low Voltage  
DAC (VID0 - VID4) Input High Voltage  
VID Pull-Up  
2.0  
10  
-
V
20  
40  
µA  
CHANNEL GENERATOR  
Frequency, F  
SW  
R
= 100k, ±1%  
245  
0.05  
-
275  
305  
1.5  
1.0  
kHz  
MHz  
V
T
Adjustment Range  
Disable Voltage  
See Figure 10  
-
-
Maximum voltage at FS/DIS to disable controller. I  
= 1mA.  
FS/DIS  
ERROR AMPLIFIER  
DC Gain  
R
C
C
R
R
= 10K to ground  
-
72  
18  
-
dB  
MHz  
V/µs  
V
L
L
L
L
L
Gain-Bandwidth Product  
Slew Rate  
= 100pF, R = 10K to ground  
L
-
-
-
-
= 100pF, Load = ±400µA  
5.3  
4.1  
0.16  
Maximum Output Voltage  
Minimum Output Voltage  
= 10K to ground, Load = 400µA  
= 10K to ground, Load = -400µA  
3.6  
-
-
0.5  
V
I
SEN  
Full Scale Input Current  
Over-Current Trip Level  
POWER GOOD MONITOR  
Under-Voltage Threshold  
Under-Voltage Threshold  
PGOOD Low Output Voltage  
PROTECTION  
-
-
50  
-
-
µA  
µA  
82.5  
VSEN Rising  
VSEN Falling  
-
-
-
0.92  
0.90  
0.18  
-
-
V
DAC  
V
DAC  
V
I
= 4mA  
0.4  
PGOOD  
Over-Voltage Threshold  
Percent Over-Voltage Hysteresis  
VSEN Rising  
1.12  
-
1.15  
2
1.2  
-
V
DAC  
%
VSEN Falling after Over-Voltage  
FN4766.3  
December 27, 2004  
6
HIP6302  
R
IN  
FB  
V
IN  
HIP6302  
ERROR  
AMPLIFIER  
COMPARATOR  
L
Q1  
01  
-
PWM1  
CORRECTION  
PWM  
-
HIP6601  
CIRCUIT  
+
I
L1  
+
+
-
Q2  
PHASE  
PROGRAMMABLE  
REFERENCE  
DAC  
R
ISEN1  
+
CURRENT  
I
SEN1  
SENSING  
-
I AVERAGE  
CURRENT  
AVERAGING  
V
CORE  
C
R
-
OUT  
LOAD  
R
ISEN2  
I
SEN2  
+
CURRENT  
SENSING  
V
IN  
PHASE  
-
COMPARATOR  
+
L
Q3  
02  
+
-
PWM2  
PWM  
HIP6601  
CORRECTION  
CIRCUIT  
I
L2  
Q4  
FIGURE 1. SIMPLIFIED BLOCK DIAGRAM OF THE HIP6302 VOLTAGE AND CURRENT CONTROL LOOPS FOR A TWO POWER  
CHANNEL REGULATOR  
voltage results in increased Comparator output duty cycle.  
This increased duty cycle signal is passed through the PWM  
CIRCUIT with no phase reversal and on to the HIP6601,  
again with no phase reversal for gate drive to the upper  
MOSFETs, Q1 and Q3. Increased duty cycle or ON time for  
the MOSFET transistors results in increased output voltage  
to compensate for the low output voltage sensed.  
Operation  
Figure 1 shows a simplified diagram of the voltage regulation  
and current control loops. Both voltage and current feedback  
are used to precisely regulate voltage and tightly control  
output currents, I and I , of the two power channels. The  
L1 L2  
voltage loop comprises the Error Amplifier, Comparators,  
gate drivers and output MOSFETS. The Error Amplifier is  
essentially connected as a voltage follower that has as an  
input, the Programmable Reference DAC and an output that  
is the CORE voltage.  
Current Loop  
The current control loop works in a similar fashion to the  
voltage control loop, but with current control information  
applied individually to each channel’s Comparator. The  
information used for this control is the voltage that is  
Voltage Loop  
Feedback from the CORE voltage is applied via resistor R  
IN  
developed across r  
of each lower MOSFET, Q2 and  
DS(ON)  
to the inverting input of the Error Amplifier. This signal can  
drive the Error Amplifier output either high or low, depending  
upon the CORE voltage. Low CORE voltage makes the  
amplifier output move towards a higher output voltage level.  
Amplifier output voltage is applied to the positive inputs of  
the Comparators via the Correction summing networks. Out-  
of-phase sawtooth signals are applied to the two  
Q4, when they are conducting. A single resistor converts and  
scales the voltage across the MOSFETs to a current that is  
applied to the Current Sensing circuit within the HIP6302.  
Output from these sensing circuits is applied to the current  
averaging circuit. Each PWM channel receives the difference  
current signal from the summing circuit that compares the  
average sensed current to the individual channel current.  
When a power channel’s current is greater than the average  
Comparators inverting inputs. Increasing Error Amplifier  
FN4766.3  
7
December 27, 2004  
HIP6302  
current, the signal applied via the summing Correction circuit  
three state condition that makes these outputs essentially  
open. This state results in no gate drive to the output  
MOSFETS.  
to the Comparator, reduces the output pulse width of the  
Comparator to compensate for the detected “above average”  
current in that channel.  
Once the V  
CC  
voltage reaches 4.375V (+125mV), a voltage  
level to insure proper internal function, the PWM outputs are  
enabled and the Soft-Start sequence is initiated. If for any  
Droop Compensation  
In addition to control of each power channel’s output current,  
the average channel current is also used to provide CORE  
voltage “droop” compensation. Average full channel current  
reason, the V  
voltage drops below 3.875V (+125mV). the  
CC  
POR circuit shuts the converter down and again three states  
the PWM outputs.  
is defined as 50µA. By selecting an input resistor, R , the  
IN  
amount of voltage droop required at full load current can be  
programmed. The average current driven into the FB pin  
Soft-Start  
After the POR function is completed with V  
reaching  
CC  
results in a voltage increase across resistor R that is in the  
IN  
4.375V, the Soft-Start sequence is initiated. Soft-Start, by its  
slow rise in CORE voltage from zero, avoids an over-current  
condition by slowly charging the discharged output  
capacitors. This voltage rise is initiated by an internal DAC  
that slowly raises the reference voltage to the error amplifier  
input. The voltage rise is controlled by the oscillator  
frequency and the DAC within the HIP6302, therefore, the  
output voltage is effectively regulated as it rises to the final  
programmed CORE voltage value.  
direction to make the Error Amplifier “see” a higher voltage at  
the inverting input, resulting in the Error Amplifier adjusting  
the output voltage lower. The voltage developed across R  
IN  
is equal to the “droop” voltage. See the “Current Sensing and  
Balancing” section for more details.  
Applications and Convertor Start-Up  
Each PWM power channel’s current is regulated. This  
enables the PWM channels to accurately share the load  
current for enhanced reliability. The HIP6601, HIP6602 or  
HIP6603 MOSFET driver interfaces with the HIP6302. For  
more information, see the HIP6601, HIP6602 or HIP6603  
data sheets.  
For the first 32 PWM switching cycles, the DAC output  
remains inhibited and the PWM outputs remain three stated.  
From the 33rd cycle and for another, approximately 150  
cycles the PWM output remains low, clamping the lower  
output MOSFETs to ground, see Figure 3. The time  
variability is due to the Error Amplifier, Sawtooth Generator  
and Comparators moving into their active regions. After this  
short interval, the PWM outputs are enabled and increment  
the PWM pulse width from zero duty cycle to operational  
pulse width, thus allowing the output voltage to slowly reach  
the CORE voltage. The CORE voltage will reach its  
programmed value before the 2048 cycles, but the PGOOD  
output will not be initiated until the 2048th PWM switching  
cycle.  
o
The HIP6302 controls the two PWM power channels 180  
out of phase. Figure 2 shows the out of phase relationship  
between the two PWM channels.  
PWM 1  
PWM 2  
The Soft-Start time or delay time, DT = 2048/F . For an  
SW  
oscillator frequency, F , of 200kHz, the first 32 cycles or  
SW  
FIGURE 2. TWO PHASE PWM OUTPUT AT 500kHz  
160µs, the PWM outputs are held in a three state level as  
explained above. After this period and a short interval  
described above, the PWM outputs are initiated and the  
voltage rises in 10.08ms, for a total delay time DT of  
10.24ms.  
Power supply ripple frequency is determined by the channel  
frequency, F , multiplied by the number of active channels.  
SW  
For example, if the channel frequency is set to 250kHz, the  
ripple frequency is 500kHz.  
Figure 3 shows the start-up sequence as initiated by a fast  
The IC monitors and precisely regulates the CORE voltage  
of a microprocessor. After initial start-up, the controller also  
provides protection for the load and the power supply. The  
following section discusses these features.  
rising 5V supply, V  
applied to the HIP6302. Note the  
CC,  
short rise to the three state level in PWM 1 output during first  
32 PWM cycles.  
Figure 4 shows the waveforms when the regulator is  
operating at 200kHz. Note that the Soft-Start duration is a  
function of the Channel Frequency as explained previously.  
Also note the pulses on the COMP terminal. These pulses  
are the current correction signal feeding into the comparator  
input (see the Block Diagram on page 2).  
Initialization  
The HIP6302 usually operates from an ATX power supply.  
Many functions are initiated by the rising supply voltage to  
the V  
pin of the HIP6302. Oscillator, Sawtooth Generator,  
CC  
Soft-Start and other functions are initialized during this  
interval. These circuits are controlled by POR, Power-On  
Reset. During this interval, the PWM outputs are driven to a  
FN4766.3  
8
December 27, 2004  
HIP6302  
.
Figure 5 shows the regulator operating from an ATX supply.  
In this figure, note the slight rise in PGOOD as the 5V supply  
rises.The PGOOD output stage is made up of NMOS and  
12V ATX  
SUPPLY  
PMOS transistors. On the rising V , the PMOS device  
CC  
becomes active slightly before the NMOS transistor pulls  
“down”, generating the slight rise in the PGOOD voltage.  
PGOOD  
Note that Figure 5 shows the 12V gate driver voltage  
available before the 5V supply to the HIP6302 has reached  
its threshold level. If conditions were reversed and the 5V  
supply was to rise first, the start-up sequence would be  
different. In this case the HIP6303 will sense an over-current  
condition due to charging the output capacitors. The supply  
will then restart and go through the normal Soft-Start cycle.  
V
CORE  
5 V ATX  
SUPPLY  
V
= 5V, CORE LOAD CURRENT = 31A  
FREQUENCY 200kHz  
IN  
ATX SUPPLY ACTIVATED BY ATX “PS-ON PIN”  
PWM 1  
OUTPUT  
FIGURE 5. SUPPLY POWERED BY ATX SUPPLY  
DELAY TIME  
PGOOD  
Fault Protection  
The HIP6302 protects the microprocessor and the entire  
power system from damaging stress levels. Within the  
HIP6302 both Over-Voltage and Over-Current circuits are  
incorporated to protect the load and regulator.  
V
CORE  
Over-Voltage  
5V  
The VSEN pin is connected to the microprocessor CORE  
voltage. A CORE over-voltage condition is detected when  
the VSEN pin goes more than 15% above the programmed  
VID level.  
V
CC  
V
= 12V  
IN  
FIGURE 3. START-UP OF 4 PHASE SYSTEM OPERATING AT  
500kHz  
The over-voltage condition is latched, disabling normal PWM  
operation, and causing PGOOD to go low. The latch can  
only be reset by lowering and returning V  
POR and Soft-Start sequence.  
high to initiate a  
CC  
During a latched over-voltage, the PWM outputs will be  
driven either low or three state, depending upon the VSEN  
input. PWM outputs are driven low when the VSEN pin  
detects that the CORE voltage is 15% above the  
programmed VID level. This condition drives the PWM  
outputs low, resulting in the lower or synchronous rectifier  
MOSFETs to conduct and shunt the CORE voltage to  
ground to protect the load.  
V COMP  
DELAY TIME  
PGOOD  
V
If after this event, the CORE voltage falls below the over-  
voltage limit (plus some hysteresis), the PWM outputs will  
three state. The HIP6601 family drivers pass the three state  
information along, and shuts off both upper and lower  
MOSFETs. This prevents “dumping” of the output capacitors  
back through the lower MOSFETS, avoiding a possibly  
destructive ringing of the capacitors and output inductors. If  
the conditions that caused the over-voltage still persist, the  
CORE  
5V  
V
CC  
V
= 12V  
IN  
FIGURE 4. START-UP OF 4 PHASE SYSTEM OPERATING AT  
200kHz  
PWM outputs will be cycled between three state and V  
clamped to ground, as a hysteretic shunt regulator.  
CORE  
FN4766.3  
9
December 27, 2004  
HIP6302  
CORE Voltage Programming  
Under-Voltage  
The VSEN pin also detects when the CORE voltage falls  
more than 10% below the VID programmed level. This  
causes PGOOD to go low, but has no other effect on  
operation and is not latched. There is also hysteresis in this  
detection point.  
The voltage identification pins (VID0, VID1, VID2, VID3 and  
VID4) set the CORE output voltage. Each VID pin is pulled to  
V
by an internal 20µA current source and accepts open-  
CC  
collector/open-drain/open-switch-to-ground or standard low-  
voltage TTL or CMOS signals.  
Over-Current  
Table 1 shows the nominal DAC voltage as a function of the  
VID codes. The power supply system is ±1% accurate over  
the operating temperature and voltage range.  
In the event of an over-current condition, the over-current  
protection circuit reduces the average current delivered to  
less than 25% of the current limit. When an over-current  
condition is detected, the controller forces all PWM outputs  
into a three state mode. This condition results in the gate  
driver removing drive to the output stages.The HIP6302  
goes into a wait delay timing cycle that is equal to the Soft-  
Start ramp time. PGOOD also goes “low” during this time  
due to VSEN going below its threshold voltage.To lower the  
average output dissipation, the Soft-Start initial wait time is  
increased from 32 to 2048 cycles, then the Soft-Start ramp is  
initiated. At a PWM frequency of 200kHz, for instance, an  
over-current detection would cause a dead time of 10.24ms,  
then a ramp of 10.08ms.  
TABLE 1. VOLTAGE IDENTIFICATION CODES  
VID4  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
VID3  
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
VID2  
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
VID1  
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
VID0  
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
VDAC  
Off  
1.100  
1.125  
1.150  
1.175  
1.200  
1.225  
1.250  
1.275  
1.300  
1.325  
1.350  
1.375  
1.400  
1.425  
1.450  
1.475  
1.500  
1.525  
1.550  
1.575  
1.600  
1.625  
1.650  
1.675  
1.700  
1.725  
1.750  
1.775  
1.800  
1.825  
1.850  
At the end of the delay, PWM outputs are restarted and the  
Soft-Start ramp is initiated. If a short is present at that time,  
the cycle is repeated. This is the hiccup mode.  
Figure 6 shows the supply shorted under operation and the  
hiccup operating mode described above. Note that due to  
the high short circuit current, over-current is detected before  
completion of the start-up sequence so the delay is not quite  
as long as the normal Soft-Start cycle.  
SHORT APPLIED HERE  
PGOOD  
SHORT  
CURRENT  
50A/DIV  
HICCUP MODE. SUPPLY POWERED BY ATX SUPPLY  
CORE LOAD CURRENT = 31A, 5V LOAD = 5A  
SUPPLY FREQUENCY = 200kHz, V = 12V  
IN  
ATX SUPPLY ACTIVATED BY ATX “PS-ON PIN”  
FIGURE 6. SHORT APPLIED TO SUPPLY AFTER POWER-UP  
FN4766.3  
10  
December 27, 2004  
HIP6302  
R
IN  
C
R
c
FB  
COMP  
FB  
V
IN  
HIP6302  
SAWTOOTH  
COMPARATOR  
L
Q1  
01  
ERROR  
AMPLIFIER  
GENERATOR  
V
-
CORE  
PWM  
HIP6601  
+
CIRCUIT  
CORRECTION  
+
PWM  
I
L
-
Q2  
+
-
PHASE  
DIFFERENCE  
REFERENCE  
DAC  
R
ISEN  
I
+
CURRENT  
SENSING  
SEN  
-
ONLY ONE OUTPUT  
STAGE SHOWN  
CURRENT  
SENSING  
FROM  
TO OTHER  
CHANNELS  
OTHER  
CHANNEL  
INDUCTOR  
CURRENT  
FROM  
OTHER  
CHANNEL  
AVERAGING  
TO OVER  
CURRENT  
TRIP  
+
-
REFERENCE  
COMPARATOR  
FIGURE 7. SIMPLIFIED FUNCTIONAL BLOCK DIAGRAM SHOWING CURRENT AND VOLTAGE SAMPLING  
current is compared with a trimmed, internally generated  
current, and used to detect an over-current condition.  
Current Sensing and Balancing  
Overview  
The nominal current through the R  
ISEN  
resistor should be  
The HIP6302 samples the on-state voltage drop across each  
synchronous rectifier FET, Q2, as an indication of the  
inductor current in that phase, see Figure 7. Neglecting AC  
effects (to be discussed later), the voltage drop across Q2 is  
50µA at full output load current, and the nominal trip point for  
over-current detection is 165% of that value, or 82.5µA.  
Therefore, R  
ISEN  
= I x r (Q2)/50µA.  
DS(ON)  
L
simply r  
(Q2) x inductor current (I ). Note that I , the  
For a full load of 25A per phase, and an r  
DS(ON)  
(Q2) of  
DS(ON)  
L L  
inductor current, is 1/2 of the total current (I ).  
LT  
4m, R  
= 2k.  
ISEN  
The over-current trip point would be 165% of 25A, or ~ 41A  
per phase. The R value can be adjusted to change the  
The voltage at Q2’s drain, the PHASE node, is applied to the  
resistor to develop the I current to the HIP6302  
R
ISEN  
ISEN  
ISEN  
ISEN pin. This pin is held at virtual ground, so the current  
over-current trip point, but it is suggested to stay within ±25%  
through R  
is I x r  
DS(ON)  
(Q2) / R .  
ISEN  
of nominal.  
ISEN  
L
The I  
ISEN  
following functions:  
current provides information to perform the  
Droop, Selection of R  
IN  
The average of the currents detected through the R  
ISEN  
resistors is also steered to the FB pin. There is no DC return  
path connected to the FB pin except for R , so the average  
1. Detection of an over-current condition  
IN  
2. Reduce the regulator output voltage with increasing load  
current (droop)  
current creates a voltage drop across R . This drop  
IN  
voltage with increasing load  
increases the apparent V  
CORE  
current, causing the system to decrease V  
3. Balance the I currents in the two phases  
L
to maintain  
CORE  
balance at the FB pin. This is the desired “droop” voltage  
Over-Current, Selecting R  
ISEN  
used to maintain V  
conditions.  
within limits under transient  
The current detected through the R  
with the current detected in the other channel. The averaged  
resistor is averaged  
CORE  
ISEN  
FN4766.3  
December 27, 2004  
11  
HIP6302  
With a high dv/dt load transient, typical of high performance  
microprocessors, the largest deviations in output voltage  
occur at the leading and trailing edges of the load transient. In  
order to fully utilize the output-voltage tolerance range, the  
output voltage is positioned in the upper half of the range  
when the output is unloaded and in the lower half of the range  
when the controller is under full load. This droop  
25  
20  
15  
10  
5
compensation allows larger transient voltage deviations and  
thus reduces the size and cost of the output filter components.  
R
should be selected to give the desired “droop” voltage at  
IN  
the normal full load current 50µA applied through the R  
0
ISEN  
resistor (or at a different full load current if adjusted as under  
“Over-Current, Selecting R ” above).  
ISEN  
R
= Vdroop / 50µA  
IN  
FIGURE 8. TWO CHANNEL MULTIPHASE SYSTEM WITH  
CURRENT BALANCING DISABLED  
For a Vdroop of 80mV, R = 1.6kΩ  
IN  
The AC feedback components, R and Cc, are scaled in  
FB  
relation to R  
.
IN  
Current Balancing  
The detected currents are also used to balance the phase  
currents.  
25  
20  
15  
10  
5
Each phase’s current is compared to the average of the two  
phase currents, and the difference is used to create an offset  
in that phase’s PWM comparator. The offset is in a direction  
to reduce the imbalance.  
The balancing circuit can not make up for a difference in  
r
between synchronous rectifiers. If a FET has a  
DS(ON)  
0
higher r  
, the current through that phase will be  
DS(ON)  
reduced.  
Figures 8 and 9 show the inductor current of a two phase  
system without and with current balancing.  
FIGURE 9. TWO CHANNEL MULTIPHASE SYSTEM WITH  
CURRENT BALANCING ENABLED  
Inductor Current  
The inductor current in each phase of a multi-phase Buck  
converter has two components. There is a current equal to  
The inductor, or load current, flows alternately from V  
IN  
through Q1 and from ground through Q2. The HIP6302  
samples the on-state voltage drop across each Q2 transistor  
to indicate the inductor current in that phase. The voltage  
the load current divided by the number of phases (I / n),  
LT  
and a sawtooth current, (i  
) resulting from switching.  
PK-PK  
The sawtooth component is dependent on the size of the  
inductors, the switching frequency of each phase, and the  
values of the input and output voltage. Ignoring secondary  
effects, such as series resistance, the peak to peak value of  
the sawtooth current can be described by:  
drop is sampled 1/3 of a switching period, 1/F , after Q1 is  
SW  
turned OFF and Q2 is turned on. Because of the sawtooth  
current component, the sampled current is different from the  
average current per phase. Neglecting secondary effects,  
the sampled current (I  
current (I ) by:  
LT  
) can be related to the load  
SAMPLE  
2
i
= (V x V  
IN CORE  
- V  
CORE  
) / (L x F  
x V )  
IN  
PK-PK  
Where: V  
SW  
= DC value of the output or V voltage  
ID  
= DC value of the input or supply voltage  
CORE  
2
I
=
I
/ n + (V V  
IN CORE  
- 3V  
) / (6L x F x V )  
SW IN  
SAMPLE LT  
CORE  
V
IN  
L = value of the inductor  
= switching frequency  
Where: I  
= total load current  
n = the number of channels  
LT  
F
SW  
Example: For V  
=1.6V,  
=12V,  
CORE  
Example: Using the previously given conditions, and  
For I = 50A,  
V
IN  
LT  
n = 2  
L =1.3µH,  
F
= 250kHz,  
Then I  
= 25.49A  
SW  
= 4.3A  
SAMPLE  
Then i  
PK-PK  
FN4766.3  
12  
December 27, 2004  
HIP6302  
As discussed previously, the voltage drop across each Q2  
transistor at the point in time when current is sampled is  
causes voltage spikes across the interconnecting  
impedances and parasitic circuit elements. These voltage  
spikes can degrade efficiency, radiate noise into the circuit  
and lead to device over-voltage stress. Careful component  
layout and printed circuit design minimizes the voltage  
spikes in the converter. Consider, as an example, the turnoff  
transition of the upper PWM MOSFET. Prior to turnoff, the  
upper MOSFET was carrying channel current. During the  
turnoff, current stops flowing in the upper MOSFET and is  
picked up by the lower MOSFET. Any inductance in the  
switched current path generates a large voltage spike during  
the switching interval. Careful component selection, tight  
layout of the critical components, and short, wide circuit  
traces minimize the magnitude of voltage spikes. Contact  
Intersil for evaluation board drawings of the component  
placement and printed circuit board.  
r
(Q2) x I  
. The voltage at Q2’s drain, the  
DSON  
SAMPLE  
PHASE node, is applied through the R resistor to the  
ISEN  
HIP6302 ISEN pin. This pin is held at virtual ground, so the  
current into ISEN is:  
I
= I  
= I  
x r  
x r  
(Q2) / R .  
ISEN  
SENSE  
SAMPLE  
SAMPLE  
DS(ON)  
R
(Q2) / 50µA  
Isen  
DS(ON)  
Example: From the previous conditions,  
where I  
= 50A,  
LT  
I
= 25.49A,  
= 4mΩ  
SAMPLE  
r
(Q2)  
ISEN  
DS(ON)  
Then: R  
I
= 2.04K and  
= 165%  
There are two sets of critical components in a DC-DC  
converter using a HIP6302 controller and a HIP6601 gate  
driver. The power components are the most critical because  
they switch large amounts of energy. Next are small signal  
components that connect to sensitive nodes or supply critical  
bypassing current and signal coupling.  
CURRENT TRIP  
Short circuit I  
= 82.5A.  
LT  
Channel Frequency Oscillator  
The channel oscillator frequency is set by placing a resistor,  
R , to ground from the FS/DIS pin. Figure 10 is a curve  
T
showing the relationship between frequency, F  
and  
The power components should be placed first. Locate the  
input capacitors close to the power switches. Minimize the  
SW,  
resistor R . To avoid pickup by the FS/DIS pin, it is important  
T
to place this resistor next to the pin. If this pin is also used to  
disable the converter, it is also important to locate the pull-  
down device next to this pin.  
length of the connections between the input capacitors, C  
and the power switches. Locate the output inductors and  
output capacitors between the MOSFETs and the load.  
Locate the gate driver close to the MOSFETs.  
,
IN  
1,000  
500  
The critical small components include the bypass capacitors  
for VCC and PVCC on the gate driver ICs. Locate the bypass  
capacitor, C , for the HIP6302 controller close to the  
BP  
device. It is especially important to locate the resistors  
associated with the input to the amplifiers close to their  
respective pins, since they represent the input to feedback  
200  
100  
50  
amplifiers. Resistor R , that sets the oscillator frequency  
T
should also be located next to the associated pin. It is  
especially important to place the R  
resistor(s) at the  
SEN  
respective terminals of the HIP6302.  
20  
10  
A multi-layer printed circuit board is recommended. Figure 11  
shows the connections of the critical components for one  
output channel of the converter. Note that capacitors C and  
IN  
5
C
could each represent numerous physical capacitors.  
OUT  
Dedicate one solid layer, usually the middle layer of the PC  
board, for a ground plane and make all critical component  
ground connections with vias to this layer. Dedicate another  
solid layer as a power plane and break this plane into smaller  
islands of common voltage levels. Keep the metal runs from  
2
1
10  
20  
50 100 200  
500 1,000 2,000 5,000 10,000  
(kHz)  
CHANNEL OSCILLATOR FREQUENCY, F  
SW  
the PHASE terminal to inductor L short. The power plane  
O1  
FIGURE 10. RESISTANCE R vs FREQUENCY  
T
should support the input power and output power nodes. Use  
copper filled polygons on the top and bottom circuit layers for  
the phase nodes. Use the remaining printed circuit layers for  
small signal wiring. The wiring traces from the driver IC to the  
MOSFET gate and source should be sized to carry at least  
one ampere of current.  
Layout Considerations  
MOSFETs switch very fast and efficiently. The speed with  
which the current transitions from one device to another  
FN4766.3  
13  
December 27, 2004  
HIP6302  
increases with case size and can reduce the usefulness of  
the capacitor to high slew-rate transient loading.  
Unfortunately, ESL is not a specified parameter. Consult the  
capacitor manufacturer and measure the capacitor’s  
impedance with frequency to select a suitable component.  
Component Selection Guidelines  
Output Capacitor Selection  
The output capacitor is selected to meet both the dynamic  
load requirements and the voltage ripple requirements. The  
load transient for the microprocessor CORE is characterized  
by high slew rate (di/dt) current demands. In general,  
multiple high quality capacitors of different size and dielectric  
are paralleled to meet the design constraints.  
Output Inductor Selection  
One of the parameters limiting the converter’s response to a  
load transient is the time required to change the inductor  
current. Small inductors in a multi-phase converter reduces  
the response time without significant increases in total ripple  
current.  
Modern microprocessors produce severe transient load rates.  
High frequency capacitors supply the initially transient current  
and slow the load rate-of-change seen by the bulk capacitors.  
The bulk filter capacitor values are generally determined by  
the ESR (effective series resistance) and voltage rating  
requirements rather than actual capacitance requirements.  
The output inductor of each power channel controls the  
ripple current. The control IC is stable for channel ripple  
current (peak-to-peak) up to twice the average current. A  
single channel’s ripple current is approximately:  
High frequency decoupling capacitors should be placed as  
close to the power pins of the load as physically possible. Be  
careful not to add inductance in the circuit board wiring that  
could cancel the usefulness of these low inductance  
components. Consult with the manufacturer of the load on  
specific decoupling requirements.  
V
V  
V
IN  
F
OUT  
OUT  
------------------------------- ---------------  
I =  
×
xL  
V
IN  
SW  
The current from multiple channels tend to cancel each other  
and reduce the total ripple current. Figure 12 gives the total  
ripple current as a function of duty cycle, normalized to the  
parameter (Vo) ⁄ (L F ) at zero duty cycle. To determine the  
total ripple current from the number of channels and the duty  
S
Use only specialized low-ESR capacitors intended for  
switching-regulator applications for the bulk capacitors. The  
bulk capacitor’s ESR determines the output ripple voltage  
and the initial voltage drop following a high slew-rate  
transient’s edge. In most cases, multiple capacitors of small  
case size perform better than a single large case capacitor.  
cycle, multiply the y-axis value by (Vo) ⁄ (LxF ) .  
SW  
Small values of output inductance can cause excessive power  
dissipation. The HIP6303 is designed for stable operation for  
ripple currents up to twice the load current. However, for this  
condition, the RMS current is 115% above the value shown in  
the following MOSFET Selection and Considerations section.  
With all else fixed, decreasing the inductance could increase  
the power dissipated in the MOSFETs by 30%.  
Bulk capacitor choices include aluminum electrolytic, OS-  
Con, Tantalum and even ceramic dielectrics. An aluminum  
electrolytic capacitor’s ESR value is related to the case size  
with lower ESR available in larger case sizes. However, the  
equivalent series inductance (ESL) of these capacitors  
+5V  
IN  
USE INDIVIDUAL METAL RUNS  
FOR EACH CHANNEL TO HELP  
ISOLATE OUTPUT STAGES  
+12V  
C
BP  
VCC PVCC  
LOCATE NEXT TO IC PIN(S)  
C
BOOT  
C
IN  
LOCATE NEAR TRANSISTOR  
V
CC  
L
C
PWM  
O1  
BP  
V
CORE  
HIP6601  
PHASE  
FS/DIS  
COMP  
C
OUT  
C
T
HIP6302  
R
T
R
FB  
LOCATE NEXT  
TO FB PIN  
FB  
LOCATE NEXT TO IC PIN  
SEN  
R
IN  
R
VSEN  
ISEN  
KEY  
ISLAND ON POWER PLANE LAYER  
ISLAND ON CIRCUIT PLANE LAYER  
VIA CONNECTION TO GROUND PLANE  
FIGURE 11. PRINTED CIRCUIT BOARD POWER PLANES AND ISLANDS  
FN4766.3  
14  
December 27, 2004  
HIP6302  
supply the RMS current. Small ceramic capacitors should  
1.0  
0.8  
0.6  
0.4  
0.2  
0
be placed very close to the drain of the upper MOSFET to  
suppress the voltage induced in the parasitic circuit  
impedances.  
SINGLE  
CHANNEL  
For bulk capacitance, several electrolytic capacitors (Panasonic  
HFQ series or Nichicon PL series or Sanyo MV-GX or  
equivalent) may be needed. For surface mount designs, solid  
tantalum capacitors can be used, but caution must be exercised  
with regard to the capacitor surge current rating. These  
capacitors must be capable of handling the surge-current at  
power-up. The TPS series available from AVX, and the 593D  
series from Sprague are both surge current tested.  
2 CHANNEL  
3 CHANNEL  
4 CHANNEL  
0.1  
0.2  
0.3  
0.4  
0.5  
0
MOSFET Selection and Considerations  
DUTY CYCLE (V /V  
)
IN  
O
In high-current PWM applications, the MOSFET power  
dissipation, package selection and heatsink are the  
dominant design factors. The power dissipation includes two  
loss components; conduction loss and switching loss. These  
losses are distributed between the upper and lower  
MOSFETs according to duty factor (see the following  
equations). The conduction losses are the main component  
of power dissipation for the lower MOSFETs, Q2 and Q4 of  
Figure 1. Only the upper MOSFETs, Q1 and Q3 have  
significant switching losses, since the lower device turns on  
and off into near zero voltage.  
FIGURE 12. RIPPLE CURRENT vs DUTY CYCLE  
Input Capacitor Selection  
The important parameters for the bulk input capacitors are  
the voltage rating and the RMS current rating. For reliable  
operation, select bulk input capacitors with voltage and  
current ratings above the maximum input voltage and  
largest RMS current required by the circuit. The capacitor  
voltage rating should be at least 1.25 times greater than the  
maximum input voltage and a voltage rating of 1.5 times is  
a conservative guideline. The RMS current required for a  
multi-phase converter can be approximated with the aid of  
Figure 13.  
The equations assume linear voltage-current transitions and  
do not model power loss due to the reverse-recovery of the  
lower MOSFETs body diode. The gate-charge losses are  
dissipated by the Driver IC and don't heat the MOSFETs.  
However, large gate-charge increases the switching time,  
0.5  
t
which increases the upper MOSFET switching losses.  
SW  
SINGLE  
Ensure that both MOSFETs are within their maximum  
junction temperature at high ambient temperature by  
calculating the temperature rise according to package  
thermal-resistance specifications. A separate heatsink may  
be necessary depending upon MOSFET power, package  
type, ambient temperature and air flow.  
CHANNEL  
0.4  
0.3  
0.2  
0.1  
0
2 CHANNEL  
3 CHANNEL  
2
4 CHANNEL  
0.1  
I
× r  
× V  
I
× V × t  
× F  
SW SW  
O
DS(ON)  
OUT  
O
IN  
P
P
= ------------------------------------------------------------ + ---------------------------------------------------------  
UPPER  
LOWER  
V
2
IN  
2
I
× r  
× (V V  
)
OUT  
0.2  
0.3  
0.4  
0.5  
0
O
DS(ON)  
IN  
= --------------------------------------------------------------------------------  
DUTY CYCLE (V /V  
)
IN  
V
O
IN  
FIGURE 13. CURRENT MULTIPLIER vs DUTY CYCLE  
A diode, anode to ground, may be placed across Q2 and Q4  
of Figure 1. These diodes function as a clamp that catches  
the negative inductor swing during the dead time between  
the turn off of the lower MOSFETs and the turn on of the  
upper MOSFETs. The diodes must be a Schottky type to  
prevent the lossy parasitic MOSFET body diode from  
conducting. It is usually acceptable to omit the diodes and let  
the body diodes of the lower MOSFETs clamp the negative  
inductor swing, but efficiency could drop one or two percent  
as a result. The diode's rated reverse breakdown voltage  
must be greater than the maximum input voltage.  
First determine the operating duty ratio as the ratio of the  
output voltage divided by the input voltage. Find the Current  
Multiplier from the curve with the appropriate power  
channels. Multiply the current multiplier by the full load  
output current. The resulting value is the RMS current rating  
required by the input capacitor.  
Use a mix of input bypass capacitors to control the voltage  
overshoot across the MOSFETs. Use ceramic capacitance  
for the high frequency decoupling and bulk capacitors to  
FN4766.3  
15  
December 27, 2004  
HIP6302  
Small Outline Plastic Packages (SOIC)  
M16.15 (JEDEC MS-012-AC ISSUE C)  
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE  
N
INCHES MILLIMETERS  
INDEX  
M
M
B
0.25(0.010)  
H
SYMBOL  
MIN  
MAX  
0.069  
0.010  
0.019  
0.010  
0.394  
0.157  
MIN  
1.35  
0.10  
0.35  
0.19  
9.80  
3.80  
MAX  
1.75  
NOTES  
AREA  
E
A
A1  
B
C
D
E
e
0.053  
0.004  
0.014  
0.007  
0.386  
0.150  
-
-B-  
0.25  
-
0.49  
9
1
2
3
L
0.25  
-
10.00  
4.00  
3
SEATING PLANE  
A
4
-A-  
o
D
h x 45  
0.050 BSC  
1.27 BSC  
-
H
h
0.228  
0.010  
0.016  
0.244  
0.020  
0.050  
5.80  
0.25  
0.40  
6.20  
0.50  
1.27  
-
-C-  
α
µ
5
e
A1  
L
6
C
B
0.10(0.004)  
N
α
16  
16  
7
M
M
S
B
o
o
o
o
0.25(0.010)  
C
A
0
8
0
8
-
Rev. 1 02/02  
NOTES:  
1. Symbols are defined in the “MO Series Symbol List” in Section  
2.2 of Publication Number 95.  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate  
burrs. Mold flash, protrusion and gate burrs shall not exceed  
0.15mm (0.006 inch) per side.  
4. Dimension “E” does not include interlead flash or protrusions. In-  
terlead flash and protrusions shall not exceed 0.25mm (0.010  
inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual  
index feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater  
above the seating plane, shall not exceed a maximum value of  
0.61mm (0.024 inch)  
10. Controlling dimension: MILLIMETER. Converted inch dimen-  
sions are not necessarily exact.  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN4766.3  
16  
December 27, 2004  
配单直通车
HIP6302CBZA产品参数
型号:HIP6302CBZA
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
IHS 制造商:ROCHESTER ELECTRONICS INC
零件包装代码:SOIC
包装说明:SOP,
针数:16
Reach Compliance Code:unknown
风险等级:5.26
模拟集成电路 - 其他类型:SWITCHING CONTROLLER
控制模式:CURRENT/VOLTAGE-MODE
控制技术:PULSE WIDTH MODULATION
最大输入电压:5.25 V
最小输入电压:4.75 V
标称输入电压:5 V
JESD-30 代码:R-PDSO-G16
JESD-609代码:e3
长度:9.9 mm
湿度敏感等级:3
功能数量:1
端子数量:16
最高工作温度:70 °C
最低工作温度:
封装主体材料:PLASTIC/EPOXY
封装代码:SOP
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
座面最大高度:1.75 mm
表面贴装:YES
切换器配置:PHASE-SHIFT
最大切换频率:1500 kHz
温度等级:COMMERCIAL
端子面层:MATTE TIN
端子形式:GULL WING
端子节距:1.27 mm
端子位置:DUAL
处于峰值回流温度下的最长时间:30
宽度:3.9 mm
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