HMC199MS8ETR全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号HMC199MS8ETR的概述

HMC199MS8ETR芯片概述 HMC199MS8ETR是由Analog Devices公司生产的一款高度集成的宽带射频功率放大器芯片。该芯片在频率范围、增益、线性度及节能等方面具有显著优势，使其在各种接收和发射应用中广泛采用。其特别适用于无线基站、通信系统及其他需要高性能射频信号放大的场合。HMC199MS8ETR芯片支持从DC到10GHz的操作频率，具备良好的输出功率性能以及优越的线性度特性，这为建立高效的信号传输链路奠定了基础。 HMC199MS8ETR详细参数 HMC199MS8ETR的主要技术参数包括： - 工作频率：DC至10GHz - 增益：20dB (典型值) - 输出功率：27dBm (典型值) - 线性度：第三阶交调（IMD3）性能优越 - 输入和输出阻抗：50Ω - 电源电压：+5V - 功耗：400 mW (典型值) - 工作温度范围：-40°C至+85°C ...

产品型号HMC199MS8ETR的Datasheet PDF文件预览

HMC199MS8

v03.0404

MICROWAVE CORPORATION

DUAL SPDT SWITCH

DC - 2.5 GHz

Typical Applications

Features

The HMC199MS8 is ideal for:

Integrated Dual SPDTs

• Cellular

Low Insertion Loss: <0.5 dB @ 2.0 GHz

• ISM Basestations

• PCS

Positive Control: 0/+5V

Ultra Small MSOP8 Package: 14.8 mm²

Functional Diagram

General Description

The HMC199MS8 is a low-cost dual SPDT GaAs

“bypass” switch in an 8-lead MSOP package cover-

ing DC to 2.5 GHz. This four RF port component

integrates two SPDT switches and a through line

onto a single IC. The design provides low insertion

loss of less than 0.5 dB while switching passive or

active external circuit components in and out of the

signal path. Port to port isolations are typically 25

to 30 dB. On-chip circuitry enables positive voltage

control operation at very low DC currents with con-

trol inputs compatible with CMOS and most TTL

logic families. Applications include LNA or ﬁlter

bypass switching and single bit attenuator switch-

ing.

Electrical Speciﬁcations,T_A= +25° C, Vctl = 0/+5 Vdc, 50 Ohm System

Parameter

Frequency

Min.

Typ.

Max.

Units

DC - 1.0 GHz

DC - 2.0 GHz

DC - 2.5 GHz

0.3

0.5

0.7

0.6

0.8

1.0

Insertion Loss

Isolation

DC - 2.0 GHz

DC - 2.5 GHz

DC - 2.0 GHz

DC - 2.5 GHz

Return Loss (On State, Any Port)

Input Power for 1 dB Compression

0.5 - 2.0 GHz

dBm

Input Third Order Intercept

(Two-tone Input Power = 0 dBm Each Tone)

0.5 - 2.0 GHz

DC - 2.5 GHz

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

14 - 60

HMC199MS8

v03.0404

MICROWAVE CORPORATION

DUAL SPDT SWITCH

DC - 2.5 GHz

_InseG_rtia_oA_ns_LoM_ssMIC SUB-HARMONICALLY _IP_soU_laM_tiP_onED MIXER 17 - 25 GHz

-0.5

-1

-10

-20

-30

-40

-50

-60

-1.5

-2

+25 C

+85 C

-40 C

RFC1 to RFC2

RFC1 to RF1

RFC2 to RF2

-2.5

-3

0.5

1.5

2.5

0.5

1.5

2.5

FREQUENCY (GHz)

Note: Isolation between RF1 - RF2 (when RFC1 -

RFC2 is in insertion loss state) is 25 dB @ 1 GHz and

17 dB @ 2 GHz.

Return Loss

-5

RFC1

RFC2

RF1

-10

-15

-20

-25

-30

-35

-40

RF2

0.5

1.5

2.5

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

14 - 61

HMC199MS8

v03.0404

MICROWAVE CORPORATION

DUAL SPDT SWITCH

DC - 2.5 GHz

Compression vs. Frequency

Distortion vs Frequency

Carrier at 900MHz

Carrier at 1900MHz

Input Third Order Intercept (dBm)

0 dBm Each Tone

Control Input

Input Power

for 0.1 dB

Input Power

for 1.0 dB

Input Power

for 0.1 dB

Input Power

for 1.0 dB

CTL

Input

(Vdc)

900 MHz

34.5

1900 MHz

37.5

Compression Compression Compression Compression

(Vdc)

(dBm)

23.5

(dBm)

Caution: Do not operate continuously at RF power

input greater than 1 dB compression and do not “hot

switch” power levels greater than +13 dBm (Control =

0/+5Vdc).

Truth Table

*Control Input Tolerances are +/- 0.5 Vdc

Control Current

Control Input*

Signal Path

(Typical)

RFC1

RFC2

RFC1

RF1

RFC2

RF2

(Vdc)

(uA)

-65

OFF

-65

OFF

DC blocking capacitors are required at ports RFC1,

RFC2, RF1, RF2. Choose value for lowest frequency

of operation.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

14 - 62

HMC199MS8

v03.0404

MICROWAVE CORPORATION

DUAL SPDT SWITCH

DC - 2.5 GHz

Absolute Maximum Ratings

RF Input Power V_CTL= 0/+5V

Control Voltage Range (A & B)

Channel Temperature

+24 dBm

-0.5 to +7.5 Vdc

150 °C

Thermal Resistance

172 °C/W

Storage Temperature

-65 to +150 °C

-40 to +85 °C

Operating Temperature

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

14 - 63

HMC199MS8

v03.0404

MICROWAVE CORPORATION

DUAL SPDT SWITCH

DC - 2.5 GHz

Eval Board Layout (Top View)

*R1 & R2 = 100 Ohm.

These optional resistors will provide

more RF path to control circuit isolation.

The circuit board used in the ﬁnal application should be generated with proper RF circuit design techniques.

Signal lines at the RF ports should have 50 ohm impedance. The evaluation circuit board shown above is avail-

able from Hittite Microwave Corporation upon request.

List of Material

Item

Description

J1 - J4

J5 - J8

PC Mount SMA RF Connector

DC Pin

Chip Capacitor, 0402 Pkg. Choose value for lowest frequency of operation.

330 pF is provided on PCB.

C1 - C4

R1 - R2

100 Ohm Resistor, 0402 Pkg.

HMC199MS8 Bypass Switch

103234 Evaluation PCB 1.5” x 1.5”

PCB*

* Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

14 - 64

HMC199MS8

v03.0404

MICROWAVE CORPORATION

DUAL SPDT SWITCH

DC - 2.5 GHz

Typical Application Circuit

Notes:

1. Set A/B control to 0/+5V, Vdd = +5V and use HCT series logic to provide a TTL driver interface.

2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd = 5 to 7 Volts

applied to the CMOS logic gates.

3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines

lowest frequency of operation.

4. Highest RF signal power capability is achieved with Vdd = +7V and A/B set to 0/+7V.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

14 - 65

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HMC199MS8ETR产品参数

型号:	HMC199MS8ETR
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	HITTITE MICROWAVE CORP
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.6
其他特性：	CMOS/TTL COMPATIBLE
特性阻抗：	50 Ω
构造：	COMPONENT
最大输入功率 (CW)：	23.98 dBm
最大插入损耗：	1 dB
JESD-609代码：	e3
最大工作频率：	2500 MHz
最小工作频率：
最高工作温度：	85 °C
最低工作温度：	-40 °C
射频/微波设备类型：	SPDT
端子面层：	Matte Tin (Sn)
Base Number Matches：	1

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产品型号HMC199MS8ETR的概述

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