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2N5324 参数 Datasheet PDF下载

2N5324图片预览
型号: 2N5324
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管| BJT | PNP | 150V V( BR ) CEO | 10A I(C ) | TO- 3\n [TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-3 ]
分类和应用: 晶体晶体管
文件页数/大小: 20 页 / 1041 K
品牌: ETC [ ETC ]
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CY7C1339
Linear Burst Sequence
First
Address
A
[1:0]
00
01
10
11
Second
Address
A
[1:0]
01
10
11
00
Third
Address
A
[1:0]
10
11
00
01
Fourth
Address
A
[1:0]
11
00
01
10
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ plac-
es the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered
valid nor is the completion of the operation guaranteed. The
device must be deselected prior to entering the “sleep” mode.
CE
1
, CE
2
, CE
3
, ADSP, and ADSC must remain inactive for the
duration of t
ZZREC
after the ZZ input returns LOW.
ZZ Mode Electrical Characteristics
Parameter
I
DDZZ
t
ZZS
t
ZZREC
Description
Snooze mode
standby current
Device operation to
ZZ
ZZ recovery time
Test Conditions
ZZ > V
DD
0.2V
ZZ > V
DD
0.2V
ZZ < 0.2V
2t
CYC
Min.
Max.
3
2t
CYC
Unit
mA
ns
ns
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