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2N5325 参数 Datasheet PDF下载

2N5325图片预览
型号: 2N5325
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管| BJT | PNP | 200V V( BR ) CEO | 10A I(C ) | TO- 3\n [TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 10A I(C) | TO-3 ]
分类和应用: 晶体晶体管
文件页数/大小: 20 页 / 1041 K
品牌: ETC [ ETC ]
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CY7C1339
Electrical Characteristics
Over the Operating Range
Parameter
V
DD
V
DDQ
V
OH
Description
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
3.3V
−5%/+10%
2.5V
−5%
to 3.3V +10%
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –2.0 mA
V
OL
Output LOW Voltage
V
DDQ
= 3.3V, V
DD
= Min., I
OL
= 8.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OL
= 2.0 mA
V
IH
V
IH
V
IL
V
IL
I
X
Input HIGH Voltage
Input HIGH Voltage
Input LOW Voltage
[7]
Input LOW Voltage
[7]
Input Load Current
except ZZ and MODE
GND
V
I
V
DDQ
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
2.0
1.7
–0.3
–0.3
−5
−30
5
−5
30
−5
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
I
SB1
Automatic CS
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
f = f
MAX
= 1/t
CYC
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
I
SB2
Automatic CS
Max. V
DD
, Device Deselected, V
IN
All speeds
Power-Down
0.3V or V
IN
> V
DDQ
– 0.3V, f = 0
Current—CMOS Inputs
Automatic CS
Max. V
DD
, Device Deselected, or
Power-Down
V
IN
0.3V or V
IN
> V
DDQ
– 0.3V
Current—CMOS Inputs f = f
MAX
= 1/t
CYC
Automatic CS
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
, f = 0
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
I
SB4
5
420
375
325
150
125
115
10
Test Conditions
Min.
3.135
2.375
2.4
2.0
0.4
0.7
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
Max.
3.6
3.6
Unit
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
Input Current of MODE Input = V
SS
Input = V
DDQ
Input Current of ZZ
Input = V
SS
Input = V
DDQ
I
OZ
I
DD
Output Leakage
Current
V
DD
Operating Supply
Current
GND
V
I
V
DDQ,
Output Disabled
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
I
SB3
125
95
85
18
mA
mA
mA
mA
Capacitance
[9]
Parameter
C
IN
C
CLK
C
I/O
Description
Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V.
V
DDQ
= 3.3V
Max.
4
4
4
Unit
pF
pF
pF
Note:
9. Tested initially and after any design or process changes that may affect these parameters.
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