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产品型号IRF7416PBF的概述

IRF7416PBF 芯片概述 IRF7416PBF 是一款高性能的功率MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor），由国际整流器公司（International Rectifier Corporation）生产。作为一种N沟道MOSFET，IRF7416PBF常用于电力电子和开关电源领域。该器件特别适合用于需要高效率、快速开关和高负载能力的应用场合。主要特性 IRF7416PBF具有多个优良特性，包括低导通阻抗、高速开关、优异的热稳定性，以及较低的开关损耗。这些特性使得IRF7416PBF在各类电源管理和负载开关的设计中表现出色。核心参数 - V_DS（漏极到源极电压）: 最大值为55V - I_D（漏极电流）: 最大连续电流为25A - V_GS（栅极到源极电压）: 最大值为20V - R_DS(on)（导...

产品型号IRF7416PBF的Datasheet PDF文件预览

PD - 95137

IRF7416PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l P-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= -30V

R_DS(on)= 0.02Ω

l Lead-Free

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infra red, or wave soldering techniques. Power dissipation

of greater than 0.8W is possible in a typical PCB mount

application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Continuous Drain Current, V_GS@ - 10V

Pulsed Drain Current

-10

-7.1

-45

P_D@T_A= 25°C

Power Dissipation

2.5

mW/°C

Linear Derating Factor

0.02

± 20

370

-5.0

V_GS

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

dv/dt

T_J,T_STG

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambientꢀ

°C/W

www.irf.com

06/06/05

IRF7416PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-30

-0.024 V/°C Reference to 25°C, I_D= -1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= -250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

0.020

0.035

-1.0

5.6

-1.0

-25

-100

100

V_GS= -10V, I_D= -5.6A

V_GS= -4.5V, I_D= -2.8A

V_DS= V_GS, I_D= -250µA

V_DS= -10V, I_D= -2.8A

V_DS= -24V, V_GS= 0V

V_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= -20V

R_DS(on)

Static Drain-to-Source On-Resistance

Ω

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= 20V

Q_g

8.0

I_D= -5.6A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= -24V

V_GS= -10V, See Fig. 6 and 9

1700

890

410

V_DD= -15V

I_D= -5.6A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.2Ω

R_D= 2.7Ω, See Fig. 10

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

V_DS= -25V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

-3.1

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

-45

p-n junction diode.

T_J= 25°C, I_S= -5.6A, V_GS= 0V

T_J= 25°C, I_F= -5.6A

di/dt = 100A/µs

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

-1.0

56 85

99 150

Q_rr

Notes:

Repetitive rating; pulse width limited by

I_SD≤ -5.6A, di/dt ≤ 100A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

max. junction temperature. ( See fig. 11 )

Starting T_J= 25°C, L = 25mH

Pulse width ≤ 300µs; duty cycle ≤ 2%.

R_G= 25Ω, I_AS= -5.6A. (See Figure 12)

ꢀ Surface mounted on FR-4 board, t ≤ 10sec.

www.irf.com

IRF7416PbF

100

VGS

- 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

VGS

- 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

TOP

BOTTOM - 3.0V

-3.0V

20µs PULSE WIDTH

= 150°C

= 25°C

0.1

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

2.0

= -5.6A

T = 25°C

1.5

1.0

0.5

0.0

T = 150°C

V_DS= -10V

20µs PULSE WIDTH

_5.5A

= -10V

3.0

3.5

4.0

4.5

5.0

-60 -40 -20

20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

-V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

IRF7416PbF

4000

= 0V,

f = 1MHz

= -5.6A

iss

rss

oss

= C + C

SHORTED

= C

= -24V

= -15V

= C + C

3000

2000

1000

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 9

100

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100us

1ms

T = 150°C

T = 25°C

10ms

T = 25 C

T = 150 C

Single Pulse

= 0V

0.1

100

0.4

0.6

0.8

1.0

1.2

-V , Drain-to-Source Voltage (V)

-V , Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRF7416PbF

R_D

V_DS

V_GS

D.U.T.

-10V

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Charge

Fig 9a. Basic Gate Charge Waveform

Fig 10a. Switching Time Test Circuit

Current Regulator

Same Type as D.U.T.

d(on)

d(off)

50KΩ

.2µF

12V

.3µF

10%

D.U.T.

90%

-3mA

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJA

0.1

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com

IRF7416PbF

1000

800

600

400

200

TOP

-2.5A

-4.5A

BOTTOM -5.6A

D.U.T

DRIVER

-20V

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

www.irf.com

IRF7416PbF

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

D =

P.W.

^=10V] ***

[

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

]

[

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

[

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 13. For P-Channel HEXFETS

www.irf.com

IRF7416PbF

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

INCHES

MILLIMETERS

DIM

MIN

.0532

MAX

.0688

.0098

.020

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040

.013

.0075

.189

.0098

.1968

.1574

0.25 [.010]

.1497

.050 BASIC

1.27 BASIC

e 1 .025 BASIC

0.635 BASIC

.2284

.0099

.016

0°

.2440

.0196

.050

8°

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PRINT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONT ROLLING DIMENS ION: MILLIMET ER

3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.

DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DATE CODE (YWW)

P = DE S I GNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

Y= LAST DIGIT OF THE YEAR

XXXX

F7101

WW = WEEK

INTERNATIONAL

RECTIFIER

LOGO

A = ASSEMBLYSITE CODE

LOT CODE

PART NUMBER

www.irf.com

IRF7416PbF

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/05

www.irf.com

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