欢迎访问ic37.com |
会员登录 免费注册
发布采购
所在地: 型号: 精确
  • 批量询价
  •  
  • 供应商
  • 型号
  • 数量
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
  •  
  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • JANSM2N2907AUA
  • 数量-
  • 厂家-
  • 封装-
  • 批号-
  • -
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
更多
  • JANSM2N2907AUA图
  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
  • JANSM2N2907AUA 现货库存
  • 数量2400 
  • 厂家MSC 
  • 封装代理 
  • 批号24+ 
  • 假一罚万,原厂原装有COC,长期有订货
  • QQ:800888908QQ:800888908 复制
  • 755-83950019 QQ:800888908
  • JANSM2N2907AUA图
  • 深圳市思诺康科技有限公司

     该会员已使用本站16年以上
  • JANSM2N2907AUA
  • 数量1000 
  • 厂家Microchip Technology 
  • 封装4-SMD 
  • 批号23+ 
  • 晶体管
  • QQ:2881281130QQ:2881281130 复制
    QQ:2881281133QQ:2881281133 复制
  • 0755-83286481 QQ:2881281130QQ:2881281133
  • JANSM2N2907AUA图
  • 麦尔集团

     该会员已使用本站10年以上
  • JANSM2N2907AUA
  • 数量1000 
  • 厂家MSC 
  • 封装主营高端军工 
  • 批号14+ 
  • MSC全线优势订货
  • QQ:1716771758QQ:1716771758 复制
    QQ:2574148071QQ:2574148071 复制
  • 88266576 QQ:1716771758QQ:2574148071
  • JANSM2N2907AUA图
  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • JANSM2N2907AUA
  • 数量8000 
  • 厂家MICROCHIP/微芯 
  • 封装 
  • 批号21+ 
  • 全新原装原厂实力挺实单欢迎来撩
  • QQ:1092793871QQ:1092793871 复制
  • -0755-88910020 QQ:1092793871

产品型号JANSM2N2907AUA的Datasheet PDF文件预览

TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED  
PNP SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/291  
DEVICES  
LEVELS  
JANSM – 3K Rads (Si)  
JANSD – 10K Rads (Si)  
JANSP – 30K Rads (Si)  
JANSL – 50K Rads (Si)  
JANSR – 100K Rads (Si)  
2N2906A  
2N2907A  
2N2906AL  
2N2906AUA  
2N2906AUB  
2N2907AL  
2N2907AUA  
2N2907AUB  
2N2906AUBC 2N2907AUBC  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
60  
60  
Vdc  
Vdc  
Vdc  
mAdc  
W
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
Collector Current  
600  
TO-18 (TO-206AA)  
2N2906A, 2N2907A  
(1)  
Total Power Dissipation @ TA = +25°C  
Operating & Storage Junction Temperature Range  
PT  
0.5  
Top, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
(1)  
Thermal Resistance, Junction-to-Ambient  
325  
°C/W  
RθJA  
4 PIN  
1. See MIL-PRF-19500/291 for derating curves.  
2N2906AUA, 2N2907AUA  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
60  
Vdc  
Collector-Base Cutoff Current  
10  
10  
μAdc  
ηAdc  
3 PIN  
ICBO  
VCB = 60Vdc  
2N2906AUB, 2N2907AUB  
2N2906AUBC, 2N2907AUBC  
(UBC = Ceramic Lid Version)  
VCB = 50Vdc  
Emitter-Base Cutoff Current  
VEB = 5.0Vdc  
10  
50  
μAdc  
ηAdc  
IEBO  
VEB = 4.0Vdc  
Collector-Emitter Cutoff Current  
ICES  
50  
ηAdc  
VCE = 50Vdc  
T4-LDS-0055 Rev. 4 (100247)  
Page 1 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
ON CHARACTERISTICS (2)  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
IC = 0.1mAdc, VCE = 10Vdc  
2N2906A, L, UA, UB, UBC  
2N2907A, L, UA, UB, UBC  
40  
75  
IC = 1.0mAdc, VCE = 10Vdc  
IC = 10mAdc, VCE = 10Vdc  
2N2906A, L, UA, UB, UBC  
2N2907A, L, UA, UB, UBC  
40  
100  
175  
450  
2N2906A, L, UA, UB, UBC  
2N2907A, L, UA, UB, UBC  
40  
100  
hFE  
IC = 150mAdc, VCE = 10Vdc  
2N2906A, L, UA, UB, UBC  
2N2907A, L, UA, UB, UBC  
40  
100  
120  
300  
IC = 500mAdc, VCE = 10Vdc  
2N2906A, L, UA, UB, UBC  
2N2907A, L, UA, UB, UBC  
40  
50  
Collector-Emitter Saturation Voltage  
VCE(sat)  
Vdc  
Vdc  
IC = 150mAdc, IB = 15mAdc  
IC = 500mAdc, IB = 50mAdc  
0.4  
1.6  
Base-Emitter Voltage  
VBE(sat)  
IC = 150mAdc, IB = 15mAdc  
IC = 500mAdc, IB = 50mAdc  
0.6  
1.3  
2.6  
DYNAMIC CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Small-Signal Short-Circuit Forward Current Transfer Ratio  
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz  
2N2906A, L, UA, UB, UBC  
2N2907A, L, UA, UB, UBC  
40  
100  
hfe  
Magnitude of Small–Signal Short-Circuit  
Forward Current Transfer Ratio  
|hfe|  
IC = 20mAdc, VCE = 20Vdc, f = 100MHz  
2.0  
Output Capacitance  
Cobo  
Cibo  
8.0  
30  
pF  
pF  
VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz  
Input Capacitance  
VEB = 2.0Vdc, IC = 0, 100kHz f 1.0MHz  
SWITCHING CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Turn-On Time  
See MIL-PRF-19500/291  
ton  
45  
ηs  
Turn-Off Time  
See MIL-PRF-19500/291  
toff  
300  
ηs  
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%.  
T4-LDS-0055 Rev. 4 (100247)  
Page 2 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
PACKAGE DIMENSIONS  
NOTES:  
1. Dimensions are in inches.  
Dimensions  
Inches Millimeters  
Symbol  
Note  
2. Millimeters are given for general information only.  
3. Beyond r (radius) maximum, TW shall be held for a minimum length  
of .011 inch (0.28 mm).  
4. Dimension TL measured from maximum HD.  
5. Body contour optional within zone defined by HD, CD, and Q.  
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm)  
below seating plane shall be within .007 inch (0.18 mm) radius of  
true position (TP) at maximum material condition (MMC) relative to  
tab at MMC.  
Min  
Max  
.195  
.210  
.230  
Min  
4.52  
4.32  
5.31  
2.54 TP  
0.41  
Max  
4.95  
5.33  
5.84  
CD  
CH  
HD  
LC  
LD  
LL  
LU  
L1  
L2  
P
Q
TL  
TW  
r
.178  
.170  
.209  
.100 TP  
6
7,8  
.016  
.500  
.016  
.021  
.750  
.019  
.050  
0.53  
12.70 19.05 7,8,13  
0.41  
0.48  
1.27  
7,8  
7,8  
7,8  
7. Dimension LU applies between L1 and L2. Dimension LD applies  
between L2 and LL minimum. Diameter is uncontrolled in L1 and  
beyond LL minimum.  
.250  
.100  
6.35  
2.54  
.030  
.048  
.046  
.010  
0.76  
1.22  
1.17  
0.25  
5
3,4  
3
10  
6
8. All three leads.  
.028  
.036  
0.71  
0.91  
9. The collector shall be internally connected to the case.  
10. Dimension r (radius) applies to both inside corners of tab.  
11. In accordance with ASME Y14.5M, diameters are equivalent to φx  
symbology.  
α
45° TP  
45° TP  
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.  
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.  
and 1.75 inches (44.45 mm) max.  
FIGURE 1. Physical dimensions (similar to TO-18)  
T4-LDS-0055 Rev. 4 (100247)  
Page 3 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NOTES:  
Dimensions  
1. Dimensions are in inches.  
Inches  
Min  
.215  
Millimeters  
Symbol  
Note  
2. Millimeters are given for general information only.  
3. Dimension CH controls the overall package thickness. When a  
window lid is used, dimension CH must increase by a minimum of  
.010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).  
4. The corner shape (square, notch, radius) may vary at the  
manufacturer's option, from that shown on the drawing.  
5. Dimensions LW2 minimum and L3 minimum and the appropriate  
castellation length define an unobstructed three-dimensional space  
traversing all of the ceramic layers in which a castellation was  
designed. (Castellations are required on the bottom two layers,  
optional on the top ceramic layer.) Dimension “LW2” maximum and  
“L3” maximum define the maximum width and depth of the  
castellation at any point on its surface. Measurement of these  
dimensions may be made prior to solder dipping.  
Max  
.225  
.225  
.155  
.155  
.075  
.007  
.042  
.048  
.088  
.055  
.028  
.022  
Min  
5.46  
Max  
5.71  
5.71  
3.93  
3.93  
1.90  
0.18  
1.07  
1.22  
2.23  
1.39  
0.71  
0.56  
BL  
BL2  
BW  
BW2  
CH  
.145  
3.68  
.061  
.003  
.029  
.032  
.072  
.045  
.022  
.006  
1.55  
0.08  
0.74  
0.81  
1.83  
1.14  
0.56  
0.15  
3
5
L3  
LH  
LL1  
LL2  
LS  
LW  
LW2  
5
6. The co-planarity deviation of all terminal contact points, as defined  
by the device seating plane, shall not exceed .006 inch (0.15mm) for  
solder dipped leadless chip carriers.  
Pin no.  
Transistor Collector  
1
2
3
Base  
4
N/C  
Emitter  
7. In accordance with ASME Y14.5M, diameters are equivalent to φx  
symbology.  
FIGURE 2. Physical dimensions, surface mount (UA version)  
T4-LDS-0055 Rev. 4 (100247)  
Page 4 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
UB  
Dimensions  
Dimensions  
Symbol  
Inches  
Min  
.046  
.115  
.085  
Millimeters  
Min Max  
Note  
Inches  
Min  
.036  
.071  
.016  
Millimeters  
Symbol  
Note  
Max  
.056  
.128  
.108  
.128  
.108  
.038  
.035  
Max  
.040  
.079  
.024  
.008  
.012  
.022  
Min  
0.91  
1.81  
0.41  
Max  
1.02  
2.01  
0.61  
.203  
.305  
.559  
BH  
BL  
BW  
CL  
CW  
LL1  
LL2  
1.17  
2.92  
2.16  
1.42  
3.25  
2.74  
3.25  
2.74  
0.96  
0.89  
LS1  
LS2  
LW  
r
r1  
r2  
.022  
.017  
0.56  
0.43  
NOTES:  
1. Dimensions are in inches.  
2. Millimeters are given for general information only.  
3. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.  
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.  
FIGURE 3. Physical dimensions, surface mount (UB version)  
T4-LDS-0055 Rev. 4 (100247)  
Page 5 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
UBC  
Dimensions  
Dimensions  
Symbol  
Inches  
Min  
.046  
.115  
.085  
Millimeters  
Min Max  
Note  
Inches  
Min  
.036  
.071  
.016  
Millimeters  
Symbol  
Note  
Max  
.071  
.128  
.108  
.128  
.108  
.038  
.035  
Max  
.040  
.079  
.024  
.008  
.012  
.022  
Min  
0.91  
1.81  
0.41  
Max  
1.02  
2.01  
0.61  
.203  
.305  
.559  
BH  
BL  
BW  
CL  
CW  
LL1  
LL2  
1.17  
2.92  
2.16  
1.80  
3.25  
2.74  
3.25  
2.74  
0.96  
0.89  
LS1  
LS2  
LW  
r
r1  
r2  
.022  
.017  
0.56  
0.43  
NOTES:  
1. Dimensions are in inches.  
2. Millimeters are given for general information only.  
3. Hatched areas on package denote metalized areas.  
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Connected to the lid braze ring.  
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.  
FIGURE 4. Physical dimensions, surface mount (UBC version, ceramic lid)  
T4-LDS-0055 Rev. 4 (100247)  
Page 6 of 6  
配单直通车
JANSM2N2907AUA产品参数
型号:JANSM2N2907AUA
是否Rohs认证: 不符合
生命周期:Active
IHS 制造商:MICROSEMI CORP
包装说明:SMALL OUTLINE, R-CDSO-N4
针数:4
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.21.00.95
风险等级:5.62
最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V
配置:SINGLE
最小直流电流增益 (hFE):50
JESD-30 代码:R-CDSO-N4
元件数量:1
端子数量:4
最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性/信道类型:PNP
认证状态:Qualified
参考标准:MIL-19500/291
表面贴装:YES
端子形式:NO LEAD
端子位置:DUAL
晶体管应用:SWITCHING
晶体管元件材料:SILICON
最大关闭时间(toff):300 ns
最大开启时间(吨):45 ns
Base Number Matches:1
  •  
  • 供货商
  • 型号 *
  • 数量*
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
批量询价选中的记录已选中0条,每次最多15条。
 复制成功!