JANTXV2N7224U中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

PD - 90554E

IRFM250

JANTX2N7225

JANTXV2N7225

POWER MOSFET

THRU-HOLE (TO-254AA)

REF:MIL-PRF-19500/592

200V, N-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

Product Summary

Part Number

RDS(on)

ID

IRFM250

0.100 Ω

27.4A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

n

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

I

@ V

= 10V, T = 25°C

Continuous Drain Current

27.4

D

GS

C

A

I

= 10V, T = 100°C Continuous Drain Current

17

110

D

GS

C

I

Pulsed Drain Current ➀

Max. Power Dissipation

DM

@ T = 25°C

P

150

W

W/°C

V

D

C

Linear Derating Factor

1.2

V

Gate-to-Source Voltage

±20

GS

E

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

mJ

A

AS

I

27.4

15.0

5.0

AR

E

AR

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

mJ

V/ns

T

-55 to 150

J

T

Storage Temperature Range

^oC

g

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

1

1/9/01

IRFM250

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

BV

DSS

Drain-to-Source Breakdown Voltage

200

—

V

= 0V, I = 1.0mA

D

GS

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.28

DSS

J

D

Voltage

R

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.0

9.0

—

0.100

0.105

4.0

V

= 10V, I = 17A

D

DS(on)

GS

= 10V, I = 27.4A

➀

Ω

V

GS

D

V

= V , I = 250µA

GS(th)

fs

DS

GS

D

Ω

g

—

S ( )

V

> 15V, I

= 17A ➀

DS

I

25

250

V

= 160V ,V =0V

DSS

DS GS

µA

—

V

= 160V,

DS

= 0V, T = 125°C

V

GS

J

I

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

6.8

100

-100

115

22

V

= 20V

GSS

GS

nA

nC

V

GS

= -20V

Q

V

=10V, I = 27.4A

g

gs

gd

d(on)

r

D

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

V

= 100V

DS

60

t

35

V

DD

= 50V, I = 44A,

D

190

170

130

—

V

=10V, R = 2.35Ω

GS G

ns

d(off)

f

Measured from drain lead (6mm/0.25in. from

package)tosourcelead(6mm/0.25in. frompackage)

L

S

+ L

Total Inductance

D

nH

C

Input Capacitance

—

3500

700

110

12

—

V

= 0V, V

= 25V

iss

GS

DS

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Drain-to-Case Capacitance

pF

oss

rss

DC

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

I

V

t

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

27.4

110

1.9

S

A

SM

V

T = 25°C, I = 27.4A, V

= 0V ➀

GS

j

SD

rr

S

Reverse Recovery Time

950

9.0

nS

µC

T = 25°C, I = 27.4A, di/dt ≤ 100A/µs

j

F

V

Q

Reverse Recovery Charge

≤ 50V ➀

DD

RR

t

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

on

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

R

Junction-to-Case

Case-to-Sink

—

0.21

0.83

—

thJC

thJCS

°C/W

R

Junction-to-Ambient

—

48

Typical socket mount

thJA

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

2

www.irf.com

IRFM250

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

3

IRFM250

13a & b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

4

www.irf.com

IRFM250

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

-

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

r

t

f

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

5

IRFM250

15V

DRIVER

L

V

D S

D.U .T

AS

.

R

G

+

-

V

D D

I

A

20V

1

0.01

Ω

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)D SS

t

p

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

I

AS

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

0

12V

Q

G

.3µF

10 V

+

V

DS

D.U.T.

-

Q

GD

GS

V

GS

V

G

3mA

I

D

G

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

6

www.irf.com

IRFM250

Footnotes:

➀➀ I

≤ 27.4A, di/dt ≤ 190A/µs,

➀➀ Repetitive Rating; Pulse width limited by

SD

V

≤ 200V, T ≤ 150°C

maximum junction temperature.

DD

J

➀➀➀V

= 50V, starting T = 25°C, L= 1.33mH

J

DD

Peak I = 27.4A, V

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= 10V

L

GS

Case Outline and Dimensions —TO-254AA

0.12 [.005]

6.60 [.260]

6.32 [.249]

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

13.84 [.545]

13.59 [.535]

3.78 [.149]

3.53 [.139]

3.78 [.149]

3.53 [.139]

1.27 [.050]

1.02 [.040]

1.27 [.050]

1.02 [.040]

A

20.32 [.800]

20.07 [.790]

20.32 [.800]

20.07 [.790]

17.40 [.685]

16.89 [.665]

17.40 [.685]

16.89 [.665]

B

13.84 [.545]

13.59 [.535]

22.73 [.895]

21.21 [.835]

13.84 [.545]

13.59 [.535]

B

R 1.52 [.060]

1

2

3

1

2

3

C

4.06 [.160]

3.56 [.140]

17.40 [.685]

16.89 [.665]

0.84 [.033]

MAX.

4.82 [.190]

3.81 [.150]

1.14 [.045]

0.89 [.035]

3X

3.81 [.150]

2X

1.14 [.045]

0.89 [.035]

0.36 [.014]

B A

3X

3.81 [.150]

2X

0.36 [.014]

B A

NOTES:

PIN ASSIGNMENTS

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: INCH.

1

2

3

=

DRAIN

SOURCE

GATE

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 01/02

www.irf.com

7

型号:	JANTXV2N7224U
生命周期：	Active
IHS 制造商：	DEFENSE SUPPLY CENTER COLUMBUS
包装说明：	CHIP CARRIER, R-CBCC-N3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.63
Is Samacsys：	N
其他特性：	HIGH RELIABILITY
雪崩能效等级（Eas）：	150 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (ID)：	34 A
最大漏源导通电阻：	0.081 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-CBCC-N3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	136 A
认证状态：	Qualified
参考标准：	MIL-19500/592
表面贴装：	YES
端子形式：	NO LEAD
端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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