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产品型号JANTXV4N49A的Datasheet PDF文件预览

4N47A  
Mii  
4N48A JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS  
OPTOELECTRONIC PRODUCTS  
DIVISION  
4N49A  
Features:  
Applications:  
High Reliability  
Eliminate ground loops  
Base lead provided for conventional transistor  
biasing  
Level shifting  
Line receiver  
Rugged package  
Switching power supplies  
Motor control  
High gain, high voltage transistor  
+1kV electrical isolation  
DESCRIPTION  
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically  
sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF-  
19500 JAN, JANTX, JANTXV and JANS quality levels.  
*ABSOLUTE MAXIMUM RATINGS  
Input to Output Voltage.............................................................................................................................................................1kV  
Emitter-Collector Voltage............................................................................................................................................................7V  
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V  
Collector-Base Voltage.............................................................................................................................................................45V  
Reverse Input Voltage ...............................................................................................................................................................2V  
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)......................................40mA  
Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) ...............................................................................1A  
Continuous Collector Current ................................................................................................................................................50mA  
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW  
Storage Temperature........................................................................................................................................... -65°C to +125°C  
Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C  
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds)................................................................................240°C  
Notes:  
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.  
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.  
*JEDEC registered data  
Package Dimensions  
Schematic Diagram  
6
L E A D S  
0 .0 1 6 Ø [0 .4 1 ]  
0 .0 1 9 Ø [0 .4 8 ]  
0 .0 4 0 [1 .0 2 ]  
M A X .  
A
K
C
5
3
5
6
3
7
0 .3 0 5 [7 .7 5 ]  
0 .3 3 5 [8 .5 1 ]  
0 .0 4 5 [1 .1 4 ]  
0 .0 2 9 [0 .7 3 ]  
2
0 .0 2 2 Ø [5 .0 8 ]  
1
E
B
0 .5 0 0 [1 2 .7 0 ]  
M IN .  
1
2
4 5 °  
0 .1 5 5 [3 .9 4 ]  
0 .1 8 5 [4 .7 0 ]  
0 .0 3 4 [0 .8 6 4 ]  
0 .0 2 8 [0 .7 1 1 ]  
7
N O T E : A L L L IN E A R D IM E N S IO N S A R E IN IN C H E S (M IL L IM E T E R S )  
NOTE: COLLECTOR IS ISOLATED FROM CASE  
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918  
www.micropac.com E-MAIL: optosales@micropac.com  
3 - 14  
4N47A, 4N48A, and 4N49A  
JAN, JANTX, JANTXV, JANS, SINGLE CHANNEL OPTOCOUPLERS  
°
*ELECTRICAL CHARACTERISTICS TA = 25 C Unless otherwise specified  
PARAMETER  
Input Diode Static Reverse Current  
Input Diode Static Forward Voltage  
SYMBOL MIN TYP MAX UNITS  
TEST CONDITIONS  
NOTE  
I
100  
1.7  
1.5  
1.3  
µA  
V
= 2V  
R
R
°
-55 C  
+25 C  
1.0  
0.8  
0.7  
°
V
1.4  
V
I
E
= 10mA  
F
°
+100 C  
°
*OUTPUT TRANSISTOR  
PARAMETER  
TA = 25 C Unless otherwise specified  
SYMBOL MIN TYP MAX UNITS  
TEST CONDITIONS  
I = 100µA, I = 0, I = 0  
C B F  
NOTE  
Collector-Base Breakdown Voltage  
V
45  
V
(BR)CBO  
Collector-Emitter Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
V
40  
V
I
= 1mA, I = 0, I = 0  
C B F  
(BR)CEO  
V
7
V
I
= 0, I = 100µA, I = 0  
(BR)EBO  
C
E
F
°
*COUPLED CHARACTERISTICS  
TA = 25 C Unless otherwise specified  
PARAMETER  
SYMBOL MIN TYP MAX UNITS  
TEST CONDITIONS  
NOTE  
On State Collector Current  
4N47A  
0.5  
1.0  
2.0  
0.7  
1.4  
2.8  
0.5  
1.0  
2.0  
mA  
mA  
mA  
4N48A  
4N49A  
4N47A  
4N48A  
4N49A  
4N47A  
4N48A  
4N49A  
I
I
I
5
10  
V
CE  
V
CE  
V
CE  
= 5V, I = 0, I = 1mA  
B F  
C(ON)  
C(ON)  
C(ON)  
On State Collector Current  
°
-55 C  
= 5V, I = 0, I = 2mA  
B F  
On State Collector Current  
°
+100 C  
= 5V, I = 0, I = 2mA  
2
B
F
°
Off State Collector Current  
+25 C  
I
100  
100  
nA  
V
V
= 20V, I = 0, I = 0mA  
B F  
C(OFF)  
C(OFF)  
CE  
Off State Collector Current +100°C  
Collector-Emitter Saturation Voltage  
I
µA  
= 20V, I = 0, I = 0mA  
B F  
CE  
4N47A  
4N48A  
4N49A  
V
V
V
0.3  
0.3  
0.3  
V
V
V
I
= 0.5mA, I = 0, I = 2mA  
C B F  
CE(SAT)  
CE(SAT)  
CE(SAT)  
I
I
= 1mA, I = 0, I = 2mA  
B F  
C
C
= 2mA, I = 0, I = 2mA  
B
F
11  
Input to Output Resistance  
R
C
10  
V
= 1kV  
1
1
I-O  
I-O  
IN-OUT  
Input to Output Capacitance  
Rise Time/ Fall Time  
Phototransistor Operation  
5
pF  
µs  
µs  
µs  
f = 1MHz, V  
= 1kV  
IN-OUT  
4N47A  
4N48A  
4N49A  
t / t  
20  
25  
25  
r
f
f
f
t / t  
V
CC  
= 10V, I = 10mA, R = 100Ω  
r
F
L
t / t  
r
Rise Time/ Fall Time  
Photodiode Operation  
4N47A  
4N48A  
4N49A  
t / t  
0.85  
0.85  
0.85  
µs  
µs  
µs  
r
f
f
f
t / t  
V
CC  
= 10V, I = 10mA, R = 100Ω  
F L  
r
t / t  
r
NOTES:  
1.  
2.  
These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.  
This parameter measured using pulse techniques tw =100µs, duty cycle < 1%.  
RECOMMENDED OPERATING CONDITIONS:  
PARAMETER  
Input Current, Low Level  
SYMBOL  
MIN  
MAX  
100  
UNITS  
µA  
I
FL  
0
Input Current, High Level  
Supply Voltage  
I
2
5
10  
10  
mA  
V
FH  
V
CE  
SELECTION GUIDE  
PART NUMBER  
PART DESCRIPTION  
4N47A Optocoupler, JAN Screening level  
4N48AOptocoupler, JAN Screening level  
JAN4N47A  
JAN4N48A  
JAN4N49A  
4N49A Optocoupler, JAN Screening level  
4N47A Optocoupler, JANTX Screening level  
4N48A Optocoupler, JANTX Screening level  
4N49A Optocoupler, JANTX Screening level  
4N47A Optocoupler, JANTXV Screening level  
4N48A Optocoupler, JANTXV Screening level  
4N49A Optocoupler, JANTXV Screening level  
4N47A Optocoupler, JANS Screening level  
4N48A Optocoupler, JANS Screening level  
4N49A Optocoupler, JANS Screening level  
JANTX4N47A  
JANTX4N48A  
JANTX4N49A  
JANTXV4N47A  
JANTXV4N48A  
JANTXV4N49A  
JANS4N47A  
JANS4N48A  
JANS4N49A  
*JEDEC registered data  
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918  
www.micropac.com E-MAIL: optosales@micropac.com  
3 - 15  
配单直通车
JANTXV4N49A产品参数
型号:JANTXV4N49A
是否无铅: 含铅
生命周期:Transferred
IHS 制造商:OPTEK TECHNOLOGY INC
包装说明:SIMILAR TO TO-99, 6 PIN
Reach Compliance Code:compliant
ECCN代码:3A001.A.2.B
HTS代码:8541.40.80.00
风险等级:5.77
Is Samacsys:N
Coll-Emtr Bkdn Voltage-Min:40 V
配置:SINGLE
标称电流传输比:200%
最大暗电源:100000 nA
最大正向电流:0.04 A
JESD-609代码:e0
元件数量:1
最高工作温度:125 °C
最低工作温度:-65 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
端子面层:TIN LEAD
Base Number Matches:1
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