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K3020P(G) Series

Vishay Telefunken

Optocoupler with Phototriac Output

Description

The K3020P(G) series consists of a phototransistor

optically coupled to a gallium arsenide infrared-emit-

ting diode in a 6-lead plastic dual inline package. The

elements are mounted on one leadframe using a

coplanar technique, providing a fixed distance be-

tween input and output for highest safety

requirements.

Applications

Circuits for safe protective separation against electri-

cal shock according to safety class II (reinforced

isolation):

14827

For appl. class I – IV at mains voltage ≤ 300 V

For appl. class I – III at mains voltage ≤ 600 V

according to VDE 0884, table 2, suitable for:

Monitors, air conditioners, line switches, solid

state relays, microwaves.

~

6

5

2

4

VDE Standards

These couplers perform safety functions according

to the following equipment standards:

1

3

A (+) C (–) nc

VDE 0884

Note: Pin 5 must not be connected

Optocoupler for electrical safety requirements

IEC 950/EN 60950

Office machines (applied for reinforced isolation

for mains voltage ≤ 400 V

)

RMS

VDE 0804

Telecommunication apparatus and data

processing

IEC 65 Safety for mains-operated electronic and

related household apparatus

Order Instruction

Ordering Code

CTR Ranking

Remarks

1)

K3020P, K3020PG

< 30 mA

< 15 mA

< 10 mA

< 5 mA

1)

K3021P, K3021PG

K3022P, K3022PG

K3023P, K3023PG

1)

G = Leadform 10.16 mm; G is not marked on the body

Document Number 83505

Rev. A5, 13–Sep–99

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1 (9)

K3020P(G) Series

Vishay Telefunken

Features

Approvals:

Rated recurring peak voltage (repetitive)

= 600 V

V

IORM

RMS

BSI: BS EN 41003, BS EN 60095 (BS 415),

BS EN 60950 (BS 7002),

Certificate number 7081 and 7402

Creepage current resistance according to

VDE 0303/IEC 112

Comparative Tracking Index: CTI = 275

FIMKO (SETI): EN 60950,

Certificate number 12398

Thickness through insulation ≥ 0.75 mm

Underwriters Laboratory (UL) 1577 recognized,

file number E-76222

General features:

VDE 0884, Certificate number 94778

Isolation materials according to UL 94-VO

VDE 0884 related features:

Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)

Climatic classification 55/100/21 (IEC 68 part 1)

Rated impulse voltage (transient overvoltage)

V

IOTM

= 6 kV peak

Special construction:

Therefore, extra low coupling capacity of

typical 0.2 pF, high Common Mode Rejection

Isolation test voltage

(partial discharge test voltage) V = 1.6 kV

pd

I

offered into 4 groups

FT

Rated isolation voltage (RMS includes DC)

V

IOWM

= 600 V

(848 V peak)

Coupling System C

RMS

Absolute Maximum Ratings

Input (Emitter)

Parameter

Reverse voltage

Test Conditions

Symbol

Value

5

Unit

V

R

Forward current

Forward surge current

Power dissipation

I

80

3

100

mA

A

mW

C

F

t ≤ 10 s

I

p

FSM

T

≤ 25 C

P

T

j

amb

V

Junction temperature

Output (Detector)

Parameter

Off state output terminal voltage

On state RMS current

Test Conditions

Symbol

V

DRM

Value

400

100

1.5

Unit

V

mA

A

I

TRMS

Peak surge current, non-repetitive t ≤ 10 ms

I

TMS

p

Power dissipation

Junction temperature

T

amb

≤ 25 C

P

T

j

300

100

mW

C

V

Coupler

Parameter

Isolation test voltage (RMS)

Total power dissipation

Ambient temperature range

Storage temperature range

Soldering temperature

Test Conditions

≤ 25 C

Symbol

V

IO

Value

3.75

350

Unit

kV

mW

C

1)

T

amb

P

tot

T

–40 to +85

–55 to +100

260

amb

T

stg

2 mm from case, t ≤ 10 s

T

sd

1)

Related to standard climate 23/50 DIN 50014

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Document Number 83505

Rev. A5, 13–Sep–99

K3020P(G) Series

Vishay Telefunken

Electrical Characteristics (T_amb= 25°C)

Input (Emitter)

Parameter

Forward voltage

Junction capacitance

Test Conditions

I = 50 mA

V = 0, f = 1 MHz

R

Symbol

Min.

Typ.

1.25

50

Max.

1.6

Unit

V

pF

V

F

C

j

Output (Detector)

Parameter

Forward peak off-state

voltage (repetitive)

Test Conditions

= 100 nA

Symbol

V

DRM

Min.

400

Typ.

Max.

3

Unit

V

1)

I

DRM

Peak on-state voltage

I

= 100 mA

V

TM

1.5

10

0.2

V

V/ s

TM

Critical rate of rise of

off-state voltage

1)

= 0, I = 30 mA

(dv/dt)

FT

cr

(dv/dt)

0.1

crq

Test voltage must be applied within dv/dt ratings

Coupler

Parameter

Test Conditions

Type

Symbol

Min.

Typ.

15

8

5

2

Max.

Unit

mA

A

Emitting diode trigger V = 3 V, R = 150

current

K3020P(G)

K3021P(G)

K3022P(G)

K3023P(G)

I

FT

I

FT

I

FT

I

FT

30

15

10

5

S

L

Holding current

I = 10 mA, V ≥ 3 V

I

H

100

F

S

Note: I is defined as a minimum trigger current

FT

R

S

Test condition:

dv/dt_cr

V_S= 2/3 V_DRM

(Sine wave)

R_L= 33 kΩ

dv/dt_crq

V~

I

FT

V_eff= 30 V

(Sine wave)

R_L= 2 kΩ

R

L

95 10813

Figure 1. Test circuit for dv/dt and dv/dt

cr

crp

Document Number 83505

Rev. A5, 13–Sep–99

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K3020P(G) Series

Vishay Telefunken

I

F

I

FT

95 10814

I = 0

F

dv / dt

cr

crq

dv/dt_crHighest value of the “rate of rise of off-state voltage” which does not cause any switching from the

off-state to the on-state

dv/dt_crqHighest value of the “rate of rise of communicating voltage” which does not switch on the device again,

after the voltage has decreased to zero and the trigger current is switched from I_FTto zero

Figure 2.

270 Ω

+5 V

M

VAC ~

0.1 µF

TTL

Galvanical separation

95 10815

Figure 3. Motor control circuit

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Document Number 83505

Rev. A5, 13–Sep–99

K3020P(G) Series

Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 4

This device is used for protective separation against electrical shock only within the maximum safety ratings.

This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters

Forward current

Test Conditions

Symbol

Value

130

Unit

mA

I

si

Output (Detector)

Parameters

Power dissipation

Test Conditions

≤ 25 C

Symbol

Value

600

Unit

mW

T

amb

P

si

Coupler

Parameters

Rated impulse voltage

Safety temperature

Test Conditions

Symbol

V

IOTM

Value

6

150

Unit

kV

C

T

si

Insulation Rated Parameters (according to VDE 0884)

Parameter

Partial discharge test voltage –

Routine test

Test Conditions

100%, t = 1 s

Symbol

V

pd

Min.

1.6

Typ.

Max.

Unit

kV

test

Partial discharge test voltage –

Lot test (sample test)

t

= 60 s, t

= 10 s,

V

IOTM

6

1.3

kV

Tr

test

(see figure 5)

V

pd

12

Insulation resistance

V

= 500 V

= 500 V,

R

10

IO

11

10

IO

T

V

= 100 C

= 500 V,

amb

9

Insulation resistance

R

IO

10

IO

T

= 150 C

amb

(construction test only)

V

IOTM

675

600

t , t = 1 to 10 s

1

2

t , t = 1 s

3

4

P

si

(mW)

t

= 10 s

= 12 s

525

450

375

300

225

150

75

test

t

stres

V

Pd

V

IOWM

IORM

I

(mA)

si

0

t

3

t

4

0

test

0

25

50

75

100

( °C )

125

150

t

1

t

Tr

= 60 s

t

2

t

stres

13930

95 10925

T

amb

t

Figure 4. Derating diagram

Figure 5. Test pulse diagram for sample test according to

DIN VDE 0884

Document Number 83505

Rev. A5, 13–Sep–99

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K3020P(G) Series

Vishay Telefunken

Typical Characteristics (T_amb= 25 C, unless otherwise specified)

400

300

200

100

0

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

Coupled device

I

FT

F

I =100mA

T

Phototransistor

IR-diode

0

20

40

60

80

100

–30 –20 –10 0 10 20 30 40 50 60 70 80

96 11701

T

amb

– Ambient Temperature ( °C )

96 11923

T

amb

– Ambient Temperature ( °C )

Figure 6. Total Power Dissipation vs.

Ambient Temperature

Figure 9. Relative On - State vs. Ambient Temperature

1000.0

100.0

10.0

1.0

100

V

I =0

F

=100V

DR

10

0.1

1

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V – Forward Voltage ( V )

20 30 40 50 60 70 80 90 100

– Ambient Temperature ( °C )

96 11862

96 11924

T

amb

F

Figure 7. Forward Current vs. Forward Voltage

Figure 10. Off - State Current vs. Ambient Temperature

1.5

1.4

250

200

150

V =3V

R =150

L

S

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

I =30mA

FT

100

50

0

–50

–100

–150

–200

–250

–30 –20 –10 0 10 20 30 40 50 60 70 80

–2.5–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5

96 11922

T

amb

– Ambient Temperature ( °C )

96 11926

V

TM

– On–State Voltage ( V )

Figure 8. Relative Threshold Forward Current vs.

Ambient Temperature

Figure 11. On - State Current vs. Ambient Temperature

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Document Number 83505

Rev. A5, 13–Sep–99

K3020P(G) Series

Vishay Telefunken

Type

250

200

150

100

50

I

=15mA

FT

XXXXXX

Date

Code

(YM)

Production

918 A TK 63

0

Location

–50

–100

–150

–200

–250

V

0884

D

E

Safety

Logo

15090

Coupling

System

Company

Logo

–2.5–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5

96 11925

V

TM

– On–State Voltage ( V )

Indicator

Figure 12. On - State Current vs. Ambient Temperature

Figure 13. Marking example

Dimensions of K302.PG in mm

14771

Document Number 83505

Rev. A5, 13–Sep–99

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7 (9)

K3020P(G) Series

Vishay Telefunken

Dimensions of K302.P in mm

14770

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Document Number 83505

Rev. A5, 13–Sep–99

K3020P(G) Series

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83505

Rev. A5, 13–Sep–99

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型号:	K3023P
是否Rohs认证：	不符合
生命周期：	Transferred
Reach Compliance Code：	unknown
风险等级：	5.83
Is Samacsys：	N
最大输入触发电流：	0.005 A
最大绝缘电压：	5300 V
JESD-609代码：	e0
安装特点：	THROUGH HOLE MOUNT
元件数量：	1
最大通态电流：	0.1 A
最大通态电压：	3 V
最高工作温度：	85 °C
最低工作温度：	-40 °C
光电设备类型：	TRIAC OUTPUT OPTOCOUPLER
断态重复峰值电压：	400 V
子类别：	Optocoupler - Trigger Device Outputs
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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