SMD Type
Transistors
KI2309DS
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-60
-1
Typ
Max
Unit
V
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = -250
A
A
VDS = VGS, ID = -250
VDS = 0 V, VGS =
nA
A
20 V
100
-1
VDS = -48V, VGS = 0 V
VDS =-48V, VGS = 0 V, TJ = 125
VDS - 4.5 V, VGS = -10 V
VGS = -10 V, ID = -1.25 A
VGS =4.5 V, ID =-1 A
Zero gate voltage drain current
On-state drain current
IDSS
ID(on)
rDS(on)
-50
-6
A
0.275 0.340
0.406 0.550
1.9
Drain-source on-state resistance
Forward transconductance
Total gate charge *
Gate-source charge *
Gate-drain charge *
Turn-On Delay Time
Rise Time
gfs
Qg
VDS =-4.5 V, ID = -1 A
S
5.4
1.15
0.92
10.5
11.5
15.5
7.5
12
VDS = -30V ,VGS = -10 V , ID= -1.25 A
nC
Qgs
Qgd
td(on)
tr
20
20
VDD = -30V , RL = 30
,
ns
ID =- 1A , VGEN =-4.5V , RG = 6
Turn-Off Delay Time
Fall Time
td(off)
tf
30
15
Continuous Current
Pulsed Current
IS
-1.25
-8
A
A
ISM
VSD
trr
Diode Forward Voltage*
Source-Drain Reverse Recovery Time
IS = -1.25 A, VGS = 0 V
IF = -1.25 A, di/dt = 100 A/
-0.82 -1.2
30 55
V
ns
s
* Pulse test: PW
300
s duty cycle
2%.
Marking
Marking
A9
2
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