SMD Type
Transistors
KI2311DS
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Symbol
V(BR)DSS
VGS(th)
IGSS
Testconditons
Min
-8
Typ
Max
Unit
V
VGS = 0 V, ID = -10
VDS = VGS, ID =-250
A
-0.45
-8
V
A
nA
VDS = 0 V, VGS = 8 V
VDS = -6.4V, VGS = 0 V
VDS = -6.4V, VGS = 0 V, TJ = 55
VDS -5 V, VGS = -4.5 V
VDS -5 V, VGS =-2.5 V
VGS = -4.5 V, ID = -3.5 A
VGS = -2.5V, ID = -3A
100
-1
Zero Gate Voltage Drain Current
On-State Drain Current*
IDSS
A
A
-10
-6
-3
ID(on)
0.036 0.045
0.058 0.072
0.096 0.120
9.0
Drain Source On State Resistance*
rDS(on)
VGS = -1.8V, ID =-0.7A
VDS = -5V, ID = -3.5 A
Forward Transconductanceb
Schottky Diode Forward Voltage*
Total Gate Charge
gfs
VSD
Qg
S
V
IS = -0.8 A, VGS = 0 V
-1.2
8.5
1.5
2.1
970
485
160
18
12
VDS = -4 V, VGS = -4.5V, ID = -3.5 A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
VDS = -4 V, VGS = 0, f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
25
65
60
65
45
VDD=-4V,RL=4 ,ID=-1A,VGEN=-
ns
4.5V,RG=6
*
Turn-Off Delay Time
Fall Time
td(off)
tf
40
45
* Pulse test :Pulse width 300 s,duty cycle 2%
Marking
Marking
C1
2
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