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产品型号KI2311DS的Datasheet PDF文件预览

SMD Type  
Transistors  
P-Channel 1.8-V (G-S) MOSFET  
KI2311DS  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
Features  
3
TrenchFET Power MOSFETS  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1. Gate  
2. Source  
3. Drain  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
5secs  
Steady State  
Unit  
V
-8  
Gate-Source Voltage  
VGS  
8
-3.5  
-2.8  
-3  
Continuous Drain Current (TJ = 150 )*1,2 TA = 25  
TA = 70  
ID  
-2.4  
A
Pulsed Drain Current  
IDM  
IS  
Continuous Source Current (Diode Conduction)*1,2  
-0.8  
0.96  
0.62  
-0.6  
0.71  
0.46  
Maximum Power Dissipation *1,2  
TA = 25  
TA = 70  
PD  
W
-55 to 150  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
*1 Surface Mounted on FR4 Board.  
*2 Pulse width limited by maximum junction temperature.  
Thermal Resistance Ratings  
Parameter  
Symbol  
RthJA  
Typical  
100  
Maximum  
Unit  
/W  
130  
175  
75  
t
5 sec  
Maximum Junction-to-Ambient *  
Steady-State  
Steady-State  
140  
Maximum Junction-to-Foot (Drain)  
* Surface Mounted on FR4 Board.  
RthJF  
60  
1
www.kexin.com.cn  
SMD Type  
Transistors  
KI2311DS  
Electrical Characteristics Ta = 25  
Parameter  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
Symbol  
V(BR)DSS  
VGS(th)  
IGSS  
Testconditons  
Min  
-8  
Typ  
Max  
Unit  
V
VGS = 0 V, ID = -10  
VDS = VGS, ID =-250  
A
-0.45  
-8  
V
A
nA  
VDS = 0 V, VGS = 8 V  
VDS = -6.4V, VGS = 0 V  
VDS = -6.4V, VGS = 0 V, TJ = 55  
VDS -5 V, VGS = -4.5 V  
VDS -5 V, VGS =-2.5 V  
VGS = -4.5 V, ID = -3.5 A  
VGS = -2.5V, ID = -3A  
100  
-1  
Zero Gate Voltage Drain Current  
On-State Drain Current*  
IDSS  
A
A
-10  
-6  
-3  
ID(on)  
0.036 0.045  
0.058 0.072  
0.096 0.120  
9.0  
Drain Source On State Resistance*  
rDS(on)  
VGS = -1.8V, ID =-0.7A  
VDS = -5V, ID = -3.5 A  
Forward Transconductanceb  
Schottky Diode Forward Voltage*  
Total Gate Charge  
gfs  
VSD  
Qg  
S
V
IS = -0.8 A, VGS = 0 V  
-1.2  
8.5  
1.5  
2.1  
970  
485  
160  
18  
12  
VDS = -4 V, VGS = -4.5V, ID = -3.5 A  
nC  
pF  
Gate-Source Charge  
Gate-Drain Charge  
Input Capacitance  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
td(on)  
tr  
VDS = -4 V, VGS = 0, f = 1 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
25  
65  
60  
65  
45  
VDD=-4V,RL=4 ,ID=-1A,VGEN=-  
ns  
4.5V,RG=6  
*
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
40  
45  
* Pulse test :Pulse width 300 s,duty cycle 2%  
Marking  
Marking  
C1  
2
www.kexin.com.cn  
配单直通车
KI23308300J0G产品参数
型号:KI23308300J0G
生命周期:Active
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8536.69.40.40
风险等级:5.65
制造商序列号:KI
端子和端子排类型:BARRIER STRIP TERMINAL BLOCK
Base Number Matches:1
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