MUN5234DW1T1G中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

MUN5211DW1T1 Series

Preferred Devices

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the MUN5211DW1T1 series,

two BRT devices are housed in the SOT−363 package which is ideal

for low power surface mount applications where board space is at a

premium.

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(3)

(2)

(1)

R

1

R

2

Q

1

Q

2

R

2

R

1

Features

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Pb−Free Packages are Available

6

1

MAXIMUM RATINGS

(T = 25°C unless otherwise noted, common for Q and Q )

A

SOT−363

CASE 419B

STYLE 1

1

2

Rating

Symbol

Value

50

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V

CBO

CEO

50

Vdc

MARKING DIAGRAM

I

100

mAdc

C

6

THERMAL CHARACTERISTICS

xx M G

Characteristic

(One Junction Heated)

G

Symbol

Max

Unit

Total Device Dissipation

P

187 (Note 1)

256 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

mW

1

D

T = 25°C

A

Derate above 25°C

mW/°C

°C/W

xx

M

G

= Device Code

= Date Code*

= Pb−Free Package

Thermal Resistance,

Junction-to-Ambient

R

q

670 (Note 1)

490 (Note 2)

JA

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

P

250 (Note 1)

385 (Note 2)

2.0 (Note 1)

3.0 (Note 2)

mW

D

T = 25°C

A

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Derate above 25°C

mW/°C

°C/W

°C

Thermal Resistance,

Junction-to-Ambient

R

q

493 (Note 1)

325 (Note 2)

JA

Preferred devices are recommended choices for future use

and best overall value.

Thermal Resistance,

Junction-to-Lead

R

q

188 (Note 1)

208 (Note 2)

JL

Junction and Storage Temperature

T , T

J

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

©

Semiconductor Components Industries, LLC, 2005

1

Publication Order Number:

December, 2005 − Rev. 7

MUN5211DW1T1/D

MUN5211DW1T1 Series

DEVICE MARKING AND RESISTOR VALUES

†

Device

MUN5211DW1T1

MUN5211DW1T1G

Package

Marking

7A

R1 (K)

10

R2 (K)

10

Shipping

SOT−363

3000/Tape & Reel

SOT−363

(Pb−Free)

7A

10

MUN5212DW1T1

MUN5212DW1T1G

SOT−363

7B

22

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5213DW1T1

MUN5213DW1T1G

SOT−363

7C

47

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5214DW1T1

MUN5214DW1T1G

SOT−363

7D

10

47

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5215DW1T1

MUN5215DW1T1G

SOT−363

7E

10

∞

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5216DW1T1

MUN5216DW1T1G

SOT−363

7F

4.7

∞

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5230DW1T1

MUN5230DW1T1G

SOT−363

7G

1.0

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5231DW1T1

MUN5231DW1T1G

SOT−363

7H

2.2

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5232DW1T1

MUN5232DW1T1G

SOT−363

7J

4.7

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5233DW1T1

MUN5233DW1T1G

SOT−363

7K

4.7

47

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5234DW1T1

MUN5234DW1T1G

SOT−363

7L

22

47

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5235DW1T1

MUN5235DW1T1G

SOT−363

7M

2.2

47

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5236DW1T1

MUN5236DW1T1G

SOT−363

7N

100

3000/Tape & Reel

SOT−363

(Pb−Free)

MUN5237DW1T1

MUN5237DW1T1G

SOT−363

7P

47

22

3000/Tape & Reel

SOT−363

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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2

MUN5211DW1T1 Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )

A

1

2

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (V = 50 V, I = 0)

I

−

100

500

nAdc

mAdc

CB

E

CBO

CEO

Collector-Emitter Cutoff Current (V = 50 V, I = 0)

CE

B

Emitter-Base Cutoff Current

(V = 6.0 V, I = 0)

MUN5211DW1T1, G

MUN5212DW1T1, G

MUN5213DW1T1, G

MUN5214DW1T1, G

MUN5215DW1T1, G

MUN5216DW1T1, G

MUN5230DW1T1, G

MUN5231DW1T1, G

MUN5232DW1T1, G

MUN5233DW1T1, G

MUN5234DW1T1, G

MUN5235DW1T1, G

MUN5236DW1T1, G

MUN5237DW1T1, G

I

−

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.05

0.13

EBO

EB

C

Collector-Base Breakdown Voltage (I = 10 mA, I = 0)

V

50

−

Vdc

C

E

(BR)CBO

(BR)CEO

Collector-Emitter Breakdown Voltage (Note 3) (I = 2.0 mA, I = 0)

C

B

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

ON CHARACTERISTICS (Note 4)

DC Current Gain

(V = 10 V, I = 5.0 mA)

MUN5211DW1T1, G

MUN5212DW1T1, G

MUN5213DW1T1, G

MUN5214DW1T1, G

MUN5215DW1T1, G

MUN5216DW1T1, G

MUN5230DW1T1, G

MUN5231DW1T1, G

MUN5232DW1T1, G

MUN5233DW1T1, G

MUN5234DW1T1, G

MUN5235DW1T1, G

MUN5236DW1T1, G

MUN5237DW1T1, G

h

FE

35

60

80

60

−

100

140

350

5.0

CE

C

80

160

3.0

8.0

15

80

15

30

200

150

140

150

140

80

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3

MUN5211DW1T1 Series

Collector-Emitter Saturation Voltage

(I = 10 mA, I = 0.3 mA)

V

Vdc

CE(sat)

MUN5211DW1T1, G

MUN5212DW1T1, G

MUN5213DW1T1, G

MUN5214DW1T1, G

MUN5235DW1T1, G

MUN5236DW1T1, G

MUN5230DW1T1, G

MUN5231DW1T1, G

MUN5237DW1T1, G

MUN5215DW1T1, G

MUN5216DW1T1, G

MUN5232DW1T1, G

MUN5233DW1T1, G

MUN5234DW1T1, G

−

0.25

C

B

(I = 10 mA, I = 5 mA)

C

B

(I = 10 mA, I = 1 mA)

C

B

Output Voltage (on)

(V = 5.0 V, V = 2.5 V, R = 1.0 kW)

V

Vdc

OL

MUN5211DW1T1, G

MUN5212DW1T1, G

MUN5214DW1T1, G

MUN5215DW1T1, G

MUN5216DW1T1, G

MUN5230DW1T1, G

MUN5231DW1T1, G

MUN5232DW1T1, G

MUN5233DW1T1, G

MUN5234DW1T1, G

MUN5235DW1T1, G

MUN5213DW1T1, G

MUN5236DW1T1, G

MUN5237DW1T1, G

−

0.2

CC

B

L

(V = 5.0 V, V = 3.5 V, R = 1.0 kW)

CC

B

L

(V = 5.0 V, V = 5.5 V, R = 1.0 kW)

CC

B

L

(V = 5.0 V, V = 4.0 V, R = 1.0 kW)

CC

B

L

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

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4

MUN5211DW1T1 Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q ) (Continued)

A

1

2

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS (Note 5) (Continued)

Output Voltage (off)

V

Vdc

OH

(V = 5.0 V, V = 0.5 V, R = 1.0 kW)

MUN5211DW1T1, G

MUN5212DW1T1, G

MUN5213DW1T1, G

MUN5214DW1T1, G

MUN5233DW1T1, G

MUN5234DW1T1, G

MUN5235DW1T1, G

MUN5230DW1T1, G

MUN5215DW1T1, G

MUN5216DW1T1, G

MUN5231DW1T1, G

MUN5232DW1T1, G

MUN5236DW1T1, G

MUN5237DW1T1, G

4.9

−

CC

B

L

(V = 5.0 V, V = 0.050 V, R = 1.0 kW)

CC

B

L

(V = 5.0 V, V = 0.25 V, R = 1.0 kW)

CC

B

L

Input Resistor

MUN5211DW1T1, G

MUN5212DW1T1, G

MUN5213DW1T1, G

MUN5214DW1T1, G

MUN5215DW1T1, G

MUN5216DW1T1, G

MUN5230DW1T1, G

MUN5231DW1T1, G

MUN5232DW1T1, G

MUN5233DW1T1, G

MUN5234DW1T1, G

MUN5235DW1T1, G

MUN5236DW1T1, G

MUN5237DW1T1, G

R1

7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

10

22

47

10

4.7

1.0

2.2

4.7

22

2.2

100

47

13

28.6

61.1

13

6.1

1.3

2.9

6.1

k W

15.4

1.54

70

28.6

2.86

130

61.1

32.9

Resistor Ratio MUN5211DW1T1, G/MUN5212DW1T1, G/

MUN5213DW1T1, G/MUN5236DW1T1, G

MUN5214DW1T1, G

R1/R2

0.8

0.17

−

1.0

0.21

−

1.2

0.25

−

MUN5215DW1T1, G/MUN5216DW1T1, G

MUN5230DW1T1, G/MUN5231DW1T1, G/MUN5232DW1T1, G

0.8

1.0

1.2

MUN5233DW1T1, G

MUN5234DW1T1, G

MUN5235DW1T1, G

MUN5237DW1T1, G

0.055

0.38

0.038

1.7

0.1

0.185

0.56

0.056

2.6

0.47

0.047

2.1

5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

ALL MUN5211DW1T1 SERIES DEVICES

300

250

200

150

100

R

q

JA

= 833°C/W

50

0

−50

0

50

100

150

T , AMBIENT TEMPERATURE (°C)

A

Figure 1. Derating Curve

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5

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1

1

1000

I /I = 10

C B

V

= 10 V

T ꢀ=ꢀ−25°C

A

CE

25°C

T ꢀ=ꢀ75°C

A

25°C

0.1

−25°C

75°C

100

0.01

0.001

10

0

20

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 2. V_CE(sat)versus I_C

Figure 3. DC Current Gain

4

3

100

10

25°C

75°C

f = 1 MHz

I = 0 V

E

T ꢀ=ꢀ−25°C

A

T = 25°C

A

1

0.1

2

1

0

0.01

0.001

V

= 5 V

9

O

0

10

20

30

40

50

0

1

2

3

4

5

6

7

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 4. Output Capacitance

Figure 5. Output Current versus Input Voltage

10

V

= 0.2 V

T ꢀ=ꢀ−25°C

A

O

25°C

75°C

1

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 6. Input Voltage versus Output Current

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6

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1

1000

1

V

= 10 V

CE

I /I = 10

C B

T ꢀ=ꢀ75°C

A

25°C

T ꢀ=ꢀ−25°C

A

0.1

−25°C

75°C

100

0.01

10

0.001

1

10

100

0

20

40

50

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 7. V_CE(sat)versus I_C

Figure 8. DC Current Gain

4

3

2

1

0

100

10

1

75°C

25°C

f = 1 MHz

I = 0 V

T ꢀ=ꢀ−25°C

A

E

T = 25°C

A

0.1

0.01

V

= 5 V

O

0.001

0

10

20

30

40

50

0

2

4

6

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 9. Output Capacitance

Figure 10. Output Current versus Input Voltage

100

V

= 0.2 V

O

T ꢀ=ꢀ−25°C

A

10

1

25°C

75°C

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 11. Input Voltage versus Output Current

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7

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1

10

1

1000

V

= 10 V

CE

I /I = 10

C B

T ꢀ=ꢀ75°C

A

25°C

−25°C

25°C

75°C

100

T ꢀ=ꢀ−25°C

A

0.1

0.01

10

0

20

I , COLLECTOR CURRENT (mA)

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

Figure 12. V_CE(sat)versus I_C

Figure 13. DC Current Gain

1

100

10

1

25°C

f = 1 MHz

I = 0 V

75°C

E

T ꢀ=ꢀ−25°C

A

0.8

T = 25°C

A

0.6

0.4

0.1

0.01

0.2

0

V

= 5 V

O

0.001

0

10

20

30

40

50

0

2

4

6

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 14. Output Capacitance

Figure 15. Output Current versus Input Voltage

100

V

= 0.2 V

O

T ꢀ=ꢀ−25°C

A

25°C

75°C

10

1

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 16. Input Voltage versus Output Current

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8

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1

1

300

T ꢀ=ꢀ75°C

A

V

= 10

I /I = 10

C B

CE

T ꢀ=ꢀ−25°C

250

200

150

100

A

25°C

75°C

0.1

−25°C

0.01

50

0

0.001

0

20

40

60

80

1

2

4

6

8

10 15 20 40 50 60 70 80 90 100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 17. V_CE(sat)versus I_C

Figure 18. DC Current Gain

4

3.5

3

100

10

1

f = 1 MHz

l = 0 V

T ꢀ=ꢀ75°C

25°C

A

E

T = 25°C

A

−25°C

2.5

2

1.5

1

V

= 5 V

O

0.5

0

2

4

6

8

10 15 20 25 30 35 40 45 50

0

2

4

6

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 19. Output Capacitance

Figure 20. Output Current versus Input Voltage

10

V

= 0.2 V

O

T ꢀ=ꢀ−25°C

A

25°C

75°C

1

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 21. Input Voltage versus Output Current

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9

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215DW1T1

1

1000

V

= 10 V

CE

I /I = 10

C

B

75°C

T = −25°C

A

75°C

100

0.1

25°C

−25°C

25°C

0.01

10

1

0.001

0

20

30

40

50

1

10

100

10

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 22. V_CE(sat)versus I_C

Figure 23. DC Current Gain

100

10

1

4.5

4

75°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

3.5

3

25°C

2.5

2

T = −25°C

A

0.1

1.5

1

0.01

V

= 5 V

O

0.5

0.001

0

1

2

3

4

5

6

7

8

9

10

5

10 15 20 25 30 35 40 45 50

V , INPUT VOLTAGE (VOLTS)

in

V , REVERSE BIAS VOLTAGE (VOLTS)

R

Figure 24. Output Capacitance

Figure 25. Output Current versus Input Voltage

10

T = −25°C

A

1

25°C

75°C

V

= 0.2 V

40

O

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 26. Input Voltage versus Output Current

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10

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5216DW1T1

1

1000

V

= 10 V

75°C

CE

I /I = 10

C

B

T = −25°C

A

75°C

25°C

100

0.1

−25°C

25°C

0.01

10

1

0.001

0

20

30

40

50

1

10

100

10

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 27. V_CE(sat)versus I_C

Figure 28. DC Current Gain

100

10

1

4.5

4

75°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

25°C

3.5

3

T = −25°C

A

2.5

2

0.1

1.5

1

0.01

V

= 5 V

9

O

0.5

0.001

0

1

2

3

4

5

6

7

8

10

5

10 15 20 25 30 35 40 45 50

V , INPUT VOLTAGE (VOLTS)

in

V , REVERSE BIAS VOLTAGE (VOLTS)

R

Figure 29. Output Capacitance

Figure 30. Output Current versus Input Voltage

10

T = −25°C

A

1

25°C

75°C

V

= 0.2 V

O

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 31. Input Voltage versus Output Current

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11

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230DW1T1

100

1

I /I = 10

C

B

75°C

0.1

0.01

75°C

−25°C

10

25°C

T = −25°C

A

V

= 10 V

CE

0.001

1

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 32. V_CE(sat)versus I_C

Figure 33. DC Current Gain

4.5

4

100

10

1

75°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

3.5

3

25°C

2.5

2

T = −25°C

A

0.1

1.5

1

0.01

V

= 5 V

O

0.5

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 34. Output Capacitance

Figure 35. Output Current versus Input Voltage

10

T = −25°C

A

75°C

1

25°C

V

= 0.2 V

40

O

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 36. Input Voltage versus Output Current

http://onsemi.com

12

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5231DW1T1

100

1

I /I = 10

C

B

75°C

0.1

0.01

25°C

75°C

−25°C

10

25°C

T = −25°C

A

V

= 10 V

CE

0.001

1

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 37. V_CE(sat)versus I_C

Figure 38. DC Current Gain

4.5

4

100

10

1

75°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

3.5

3

25°C

2.5

2

T = −25°C

A

0.1

1.5

1

0.01

V

= 5 V

O

0.5

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 39. Output Capacitance

Figure 40. Output Current versus Input Voltage

10

T = −25°C

A

75°C

1

25°C

V

= 0.2 V

40

O

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 41. Input Voltage versus Output Current

http://onsemi.com

13

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232DW1T1

1000

1

V

= 10 V

CE

I /I = 10

C

B

75°C

100

0.1

0.01

−25°C

25°C

T = −25°C

A

10

1

0.001

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 42. V_CE(sat)versus I_C

Figure 43. DC Current Gain

6

5

4

3

2

1

100

10

1

f = 1 MHz

= 0 V

T = 25°C

A

75°C

I

E

25°C

T = −25°C

A

0.1

0.01

V

= 5 V

O

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 44. Output Capacitance

Figure 45. Output Current versus Input Voltage

10

T = −25°C

A

1

75°C

25°C

V

= 0.2 V

40

O

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 46. Input Voltage versus Output Current

http://onsemi.com

14

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233DW1T1

1000

1

V

= 10 V

CE

I /I = 10

C

B

75°C

T = −25°C

A

100

0.1

0.01

75°C

25°C

−25°C

25°C

10

1

0.001

0

5

10

15

20

25

30

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 47. V_CE(sat)versus I_C

Figure 48. DC Current Gain

4

3.5

3

100

10

1

75°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

25°C

2.5

2

T = −25°C

A

0.1

1.5

1

0.01

V

= 5 V

9

0.5

O

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 49. Output Capacitance

Figure 50. Output Current versus Input Voltage

10

T = −25°C

A

1

75°C

25°C

V

= 0.2 V

20

O

0.1

0

5

10

15

25

I , COLLECTOR CURRENT (mA)

C

Figure 51. Input Voltage versus Output Current

http://onsemi.com

15

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5234DW1T1

1000

1

V

= 10 V

CE

I /I = 10

C

B

75°C

100

0.1

0.01

T = −25°C

A

75°C

25°C

−25°C

25°C

10

1

0.001

0

5

10

15

20

25

30

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 52. V_CE(sat)versus I_C

Figure 53. DC Current Gain

TBD

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 54. Output Capacitance

Figure 55. Output Current versus Input Voltage

TBD

I , COLLECTOR CURRENT (mA)

C

Figure 56. Input Voltage versus Output Current

http://onsemi.com

16

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235DW1T1

1000

1

V

= 10 V

CE

I /I = 10

C

B

75°C

100

0.1

0.01

T = −25°C

A

25°C

−25°C

25°C

10

1

0.001

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 57. V_CE(sat)versus I_C

Figure 58. DC Current Gain

4.5

4

100

10

1

25°C

f = 1 MHz

= 0 V

T = 25°C

A

I

E

3.5

3

75°C

2.5

2

T = −25°C

A

0.1

1.5

1

0.01

V

= 5 V

O

0.5

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 59. Output Capacitance

Figure 60. Output Current versus Input Voltage

10

75°C

1

T = −25°C

A

25°C

V

= 0.2 V

40

O

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 61. Input Voltage versus Output Current

http://onsemi.com

17

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5236DW1T1

1000

1

V

= 10 V

CE

−25°C

I /I = 10

C

B

75°C

25°C

100

0.1

0.01

T = −25°C

A

25°C

10

1

0.001

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 62. V_CE(sat)versus I_C

Figure 63. DC Current Gain

5

4.5

4

100

10

1

f = 1 MHz

= 0 V

T = 25°C

A

75°C

I

E

3.5

3

25°C

2.5

2

T = −25°C

A

0.1

1.5

0.01

1

V

= 5 V

9

O

0.5

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 64. Output Capacitance

Figure 65. Output Current versus Input Voltage

100

T = −25°C

A

10

1

25°C

75°C

V

= 0.2 V

40

O

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 66. Input Voltage versus Output Current

http://onsemi.com

18

MUN5211DW1T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5237DW1T1

1000

1

V

= 10 V

CE

I /I = 10

C

B

−25°C

75°C

T = −25°C

75°C

25°C

100

0.1

0.01

A

25°C

10

1

0.001

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 67. V_CE(sat)versus I_C

Figure 68. DC Current Gain

5

4.5

4

100

10

1

f = 1 MHz

= 0 V

T = 25°C

A

75°C

I

E

3.5

3

25°C

2.5

2

T = −25°C

A

0.1

1.5

0.01

1

V

= 5 V

O

0.5

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 69. Output Capacitance

Figure 70. Output Current versus Input Voltage

100

T = −25°C

A

10

1

25°C

75°C

V

= 0.2 V

40

O

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 71. Input Voltage versus Output Current

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19

MUN5211DW1T1 Series

PACKAGE DIMENSIONS

SC−88 (SOT−363)

CASE 419B−02

ISSUE V

NOTES:

D

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

e

MILLIMETERS

DIM MIN NOM MAX MIN

0.80

INCHES

NOM MAX

1.10 0.031 0.037 0.043

0.10 0.000 0.002 0.004

0.008 REF

6

1

5

2

4

3

A

0.95

0.05

A1 0.00

H

E

−E−

A3

0.20 REF

0.21

0.14

2.00

1.25

0.65 BSC

0.20

2.10

b

C

D

E

e

0.10

1.80

1.15

0.30 0.004 0.008 0.012

0.25 0.004 0.005 0.010

2.20 0.070 0.078 0.086

1.35 0.045 0.049 0.053

0.026 BSC

b 6 PL

L

0.10

2.00

0.30 0.004 0.008 0.012

2.20 0.078 0.082 0.086

H

E

M

E

0.2 (0.008)

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

A3

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

C

6. COLLECTOR 2

A

A1

L

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

mm

inches

ǒ

Ǔ

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

20

MUN5211DW1T1 Series

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MUN5211DW1T1/D

http://onsemi.com

21

型号:	MUN5234DW1T1G
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	ON SEMICONDUCTOR
零件包装代码：	SC-70
包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6
制造商包装代码：	419B-02
Reach Compliance Code：	compliant
ECCN代码：	EAR99
Factory Lead Time：	8 weeks
风险等级：	5.36
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 2.14
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	80
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	2
端子数量：	6
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.385 W
认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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