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    产品型号NDS9435AS62Z的Datasheet PDF文件预览

    January 2002  
    NDS9435A  
    30V P-Channel PowerTrenchMOSFET  
    General Description  
    Features  
    This P-Channel MOSFET is a rugged gate version of  
    Fairchild Semiconductor’s advanced PowerTrench  
    process. It has been optimized for power management  
    applications requiring a wide range of gave drive  
    voltage ratings (4.5V – 25V).  
    • –5.3 A, –30 V  
    RDS(ON) = 50 mΩ @ VGS = –10 V  
    RDS(ON) = 80 mΩ @ VGS = –4.5 V  
    • Low gate charge  
    • Fast switching speed  
    Applications  
    • Power management  
    • Load switch  
    • High performance trench technology for extremely  
    low RDS(ON)  
    • Battery protection  
    • High power and current handling capability  
    D
    5
    6
    7
    8
    4
    3
    2
    1
    D
    D
    D
    G
    SO-8  
    S
    S
    S
    SO-8  
    Pin 1  
    Absolute Maximum Ratings TA=25oC unless otherwise noted  
    Symbol  
    Parameter  
    Ratings  
    Units  
    VDSS  
    Drain-Source Voltage  
    –30  
    V
    V
    A
    VGSS  
    Gate-Source Voltage  
    25  
    –5.3  
    –50  
    ID  
    Drain Current – Continuous  
    – Pulsed  
    (Note 1a)  
    Power Dissipation for Single Operation  
    (Note 1a)  
    (Note 1b)  
    (Note 1c)  
    2.5  
    1.2  
    1
    PD  
    W
    TJ, TSTG  
    Operating and Storage Junction Temperature Range  
    –55 to +175  
    °C  
    Thermal Characteristics  
    Thermal Resistance, Junction-to-Ambient  
    (Note 1a)  
    (Note 1c)  
    (Note 1)  
    50  
    125  
    25  
    RθJA  
    RθJA  
    RθJC  
    °C/W  
    °C/W  
    °C/W  
    Thermal Resistance, Junction-to-Ambient  
    Thermal Resistance, Junction-to-Case  
    Package Marking and Ordering Information  
    Device Marking  
    Device  
    Reel Size  
    Tape width  
    Quantity  
    NDS9435A  
    NDS9435A  
    13’’  
    12mm  
    2500 units  
    NDS9435A Rev E(W)  
    2002 Fairchild Semiconductor Corporation  
    Electrical Characteristics  
    TA = 25°C unless otherwise noted  
    Symbol  
    Parameter  
    Test Conditions  
    Min Typ Max Units  
    Off Characteristics  
    BVDSS  
    Drain–Source Breakdown Voltage  
    –30  
    V
    VGS = 0 V, ID = –250 µA  
    ∆BVDSS  
    Breakdown Voltage Temperature  
    –23  
    ID = –250 µA, Referenced to 25°C  
    mV/°C  
    Coefficient  
    ∆TJ  
    IDSS  
    IGSSF  
    IGSSR  
    Zero Gate Voltage Drain Current  
    Gate–Body Leakage, Forward  
    Gate–Body Leakage, Reverse  
    VDS = –24 V,  
    VGS = 0 V  
    –1  
    100  
    –100  
    µA  
    nA  
    nA  
    VGS = 25 V,  
    VGS = –25 V  
    VDS = 0 V  
    VDS = 0 V  
    On Characteristics  
    (Note 2)  
    VGS(th)  
    Gate Threshold Voltage  
    –1  
    –1.7  
    4.5  
    –3  
    V
    VDS = VGS, ID = –250 µA  
    ID = –250 µA, Referenced to 25°C  
    ∆VGS(th)  
    Gate Threshold Voltage  
    mV/°C  
    mΩ  
    Temperature Coefficient  
    ∆TJ  
    RDS(on)  
    Static Drain–Source  
    On–Resistance  
    VGS = –10 V,  
    ID = –5.3 A  
    42  
    65  
    57  
    50  
    80  
    77  
    VGS = –4.5 V, ID = –4 A  
    VGS= –10 V, ID = –5.3 A, TJ=125°C  
    ID(on)  
    gFS  
    On–State Drain Current  
    Forward Transconductance  
    VGS = –10 V,  
    VDS = –5 V,  
    VDS = –5 V  
    ID = –5.3 A  
    –25  
    A
    S
    10  
    Dynamic Characteristics  
    Ciss  
    Coss  
    Crss  
    Input Capacitance  
    528  
    132  
    70  
    pF  
    pF  
    pF  
    VDS = –15 V,  
    f = 1.0 MHz  
    V GS = 0 V,  
    Output Capacitance  
    Reverse Transfer Capacitance  
    Switching Characteristics (Note 2)  
    td(on)  
    tr  
    td(off)  
    tf  
    Turn–On Delay Time  
    Turn–On Rise Time  
    Turn–Off Delay Time  
    Turn–Off Fall Time  
    Total Gate Charge  
    Gate–Source Charge  
    Gate–Drain Charge  
    7
    13  
    14  
    9
    10  
    2.2  
    2
    14  
    24  
    25  
    17  
    14  
    ns  
    ns  
    ns  
    VDD = –15 V,  
    VGS = –10 V,  
    ID = –1 A,  
    RGEN = 6 Ω  
    ns  
    Qg  
    Qgs  
    Qgd  
    nC  
    nC  
    nC  
    V
    DS = –15 V,  
    ID = –4 A,  
    VGS = –10 V  
    Drain–Source Diode Characteristics and Maximum Ratings  
    IS  
    Maximum Continuous Drain–Source Diode Forward Current  
    Drain–Source Diode Forward  
    –2.1  
    –1.2  
    A
    V
    VSD  
    V
    GS = 0 V, IS = –2.1 A (Note 2)  
    –0.8  
    Voltage  
    Notes:  
    1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of  
    the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.  
    a) 50°C/W when  
    mounted on a 1in2  
    pad of 2 oz copper  
    b) 105°C/W when  
    mounted on a .04 in2  
    pad of 2 oz copper  
    c) 125°C/W when mounted on a  
    minimum pad.  
    Scale 1 : 1 on letter size paper  
    2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%  
    NDS9435A Rev E(W)  
    Typical Characteristics  
    30  
    2
    1.8  
    1.6  
    1.4  
    1.2  
    1
    VGS = -10V  
    -6.0V  
    -5.0V  
    VGS=-4.0V  
    -4.5V  
    -4.5V  
    20  
    10  
    0
    -4.0V  
    -5.0V  
    -6.0V  
    -7.0V  
    -3.5V  
    -3.0V  
    -8.0V  
    -10V  
    0.8  
    0
    1
    2
    3
    4
    5
    6
    0
    6
    12  
    18  
    24  
    30  
    -VDS, DRAIN TO SOURCE VOLTAGE (V)  
    -ID, DRAIN CURRENT (A)  
    Figure 1. On-Region Characteristics.  
    Figure 2. On-Resistance Variation with  
    Drain Current and Gate Voltage.  
    0.25  
    1.6  
    ID = -5.3A  
    GS = -10V  
    ID = -2.8A  
    V
    0.2  
    0.15  
    0.1  
    1.4  
    1.2  
    1
    TA = 125oC  
    TA = 25oC  
    0.8  
    0.6  
    0.05  
    0
    -50  
    -25  
    0
    25  
    50  
    75  
    100  
    125  
    150  
    175  
    2
    4
    6
    8
    10  
    TJ, JUNCTION TEMPERATURE (oC)  
    -VGS, GATE TO SOURCE VOLTAGE (V)  
    Figure 3. On-Resistance Variation with  
    Temperature.  
    Figure 4. On-Resistance Variation with  
    Gate-to-Source Voltage.  
    15  
    12  
    9
    100  
    25oC  
    VDS = -5V  
    TA = -55oC  
    VGS =0V  
    10  
    TA = 125oC  
    125oC  
    1
    0.1  
    0.01  
    25oC  
    6
    -55oC  
    3
    0.001  
    0
    0.0001  
    1
    1.5  
    2
    2.5  
    3
    3.5  
    4
    4.5  
    0
    0.2  
    0.4  
    0.6  
    0.8  
    1
    1.2  
    1.4  
    -VGS, GATE TO SOURCE VOLTAGE (V)  
    -VSD, BODY DIODE FORWARD VOLTAGE (V)  
    Figure 5. Transfer Characteristics.  
    Figure 6. Body Diode Forward Voltage Variation  
    with Source Current and Temperature.  
    NDS9435A Rev E(W)  
    Typical Characteristics  
    10  
    800  
    700  
    600  
    500  
    400  
    300  
    200  
    100  
    0
    ID = -5.3A  
    f = 1 MHz  
    GS = 0 V  
    VDS = -5V  
    -10V  
    V
    8
    6
    4
    2
    0
    -15V  
    CISS  
    COSS  
    CRSS  
    0
    2
    4
    6
    8
    10  
    0
    5
    10  
    15  
    20  
    25  
    30  
    Qg, GATE CHARGE (nC)  
    -VDS, DRAIN TO SOURCE VOLTAGE (V)  
    Figure 7. Gate Charge Characteristics.  
    Figure 8. Capacitance Characteristics.  
    100  
    50  
    40  
    30  
    20  
    10  
    0
    SINGLE PULSE  
    100µs  
    R
    θJA = 125°C/W  
    TA = 25°C  
    RDS(ON) LIMIT  
    1ms  
    10ms  
    100ms  
    1s  
    10  
    1
    10s  
    DC  
    VGS = -10V  
    SINGLE PULSE  
    0.1  
    0.01  
    R
    θJA = 125oC/W  
    TA = 25oC  
    0.1  
    1
    10  
    100  
    0.001  
    0.01  
    0.1  
    1
    10  
    100  
    1000  
    -VDS, DRAIN-SOURCE VOLTAGE (V)  
    t1, TIME (sec)  
    Figure 9. Maximum Safe Operating Area.  
    Figure 10. Single Pulse Maximum  
    Power Dissipation.  
    1
    D = 0.5  
    R
    R
    θJA(t) = r(t) + RθJA  
    0.2  
    θJA = 125oC/W  
    0.1  
    0.1  
    0.05  
    P(pk)  
    0.02  
    t1  
    0.01  
    t2  
    0.01  
    T
    J - TA = P * RθJA(t)  
    Duty Cycle, D = t1 / t2  
    SINGLE PULSE  
    0.001  
    0.0001  
    0.001  
    0.01  
    0.1  
    1
    10  
    100  
    1000  
    t1, TIME (sec)  
    Figure 11. Transient Thermal Response Curve.  
    Thermal characterization performed using the conditions described in Note 1c.  
    Transient thermal response will change depending on the circuit board design.  
    NDS9435A Rev E(W)  
    TRADEMARKS  
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
    not intended to be an exhaustive list of all such trademarks.  
    â
    SMART START™  
    STAR*POWER™  
    Stealth™  
    VCX™  
    FAST  
    ACEx™  
    Bottomless™  
    CoolFET™  
    OPTOLOGIC™  
    OPTOPLANAR™  
    PACMAN™  
    FASTr™  
    FRFET™  
    SuperSOT™-3  
    SuperSOT™-6  
    SuperSOT™-8  
    SyncFET™  
    GlobalOptoisolator™  
    GTO™  
    HiSeC™  
    ISOPLANAR™  
    LittleFET™  
    MicroFET™  
    MicroPak™  
    MICROWIRE™  
    CROSSVOLT™  
    DenseTrench™  
    DOME™  
    POP™  
    Power247™  
    PowerTrenchâ  
    QFET™  
    EcoSPARK™  
    E2CMOSTM  
    TinyLogic™  
    QS™  
    EnSignaTM  
    TruTranslation™  
    UHC™  
    QT Optoelectronics™  
    Quiet Series™  
    SILENTSWITCHERâ  
    FACT™  
    FACT Quiet Series™  
    UltraFETâ  
    STAR*POWER is used under license  
    DISCLAIMER  
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
    NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
    DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT  
    OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
    RIGHTS, NOR THE RIGHTS OF OTHERS.  
    LIFE SUPPORT POLICY  
    FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
    DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.  
    As used herein:  
    1. Life support devices or systems are devices or  
    systems which, (a) are intended for surgical implant into  
    the body, or (b) support or sustain life, or (c) whose  
    failure to perform when properly used in accordance  
    with instructions for use provided in the labeling, can be  
    reasonably expected to result in significant injury to the  
    user.  
    2. A critical component is any component of a life  
    support device or system whose failure to perform can  
    be reasonably expected to cause the failure of the life  
    support device or system, or to affect its safety or  
    effectiveness.  
    PRODUCT STATUS DEFINITIONS  
    Definition of Terms  
    Datasheet Identification  
    Product Status  
    Definition  
    Advance Information  
    Formative or  
    In Design  
    This datasheet contains the design specifications for  
    product development. Specifications may change in  
    any manner without notice.  
    Preliminary  
    First Production  
    This datasheet contains preliminary data, and  
    supplementary data will be published at a later date.  
    Fairchild Semiconductor reserves the right to make  
    changes at any time without notice in order to improve  
    design.  
    No Identification Needed  
    Obsolete  
    Full Production  
    This datasheet contains final specifications. Fairchild  
    Semiconductor reserves the right to make changes at  
    any time without notice in order to improve design.  
    Not In Production  
    This datasheet contains specifications on a product  
    that has been discontinued by Fairchild semiconductor.  
    The datasheet is printed for reference information only.  
    Rev. H4  
    配单直通车
    NDS9435AS62Z产品参数
    型号:NDS9435AS62Z
    生命周期：Obsolete
    IHS 制造商：FAIRCHILD SEMICONDUCTOR CORP
    零件包装代码：SOT
    包装说明：SMALL OUTLINE, R-PDSO-G8
    针数：8
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    风险等级：5.37
    配置：SINGLE WITH BUILT-IN DIODE
    最小漏源击穿电压：30 V
    最大漏极电流 (ID)：5.3 A
    最大漏源导通电阻：0.05 Ω
    FET 技术：METAL-OXIDE SEMICONDUCTOR
    JESD-30 代码：R-PDSO-G8
    元件数量：1
    端子数量：8
    工作模式：ENHANCEMENT MODE
    最高工作温度：175 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE
    极性/信道类型：P-CHANNEL
    认证状态：Not Qualified
    表面贴装：YES
    端子形式：GULL WING
    端子位置：DUAL
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    Base Number Matches：1
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