RFD8P06E, RFD8P06ESM, RFP8P06E
o
Absolute Maximum Ratings T = 25 C
C
RFD8P06E, RFD8P06ESM, RFP8P06E
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
-60
-60
±20
V
V
V
DSS
Drain to Gate Voltage (R
GS
= 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
8
A
A
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Refer to Peak Current Curve
DM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
48
0.32
W
W/ C
D
o
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . .ESD
2
kV
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 175
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
I
-60
-
-
DSS
GS(TH)
D
GS
V
V
V
V
V
= V , I = 250µA
-2.0
-4.0
-1.0
-25
±10
0.300
70
-
V
GS
DS
DS
GS
DS
D
Zero Gate Voltage Drain Current
I
= Rated BV
, V
= 0V
, T = 150 C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
µA
µA
Ω
DSS
DSS GS
o
= 0.8 x Rated BV
-
DSS
C
Gate to Source Leakage Current
Drain to Source On Resistance (Note 3)
Turn-On Time
I
= ±20V
-
GSS
r
I
= 8A, V
= -10V
-
DS(ON)
D
GS
t
V
R
= -30V, ID ≈ 8A,
-
ns
ON
DD
= 3.75Ω, V
= -10V, R = 2.5Ω
GS G
L
Turn-On Delay Time
t
15
30
40
25
-
ns
d(ON)
(Figure 13)
Rise Time
t
-
ns
r
Turn-Off Delay Time
t
-
ns
d(OFF)
Fall Time
t
-
ns
f
Turn-Off Time
t
100
36
18
1.5
-
ns
OFF
Total Gate Charge
Q
V
V
V
V
= 0 to -20V
V
R
= -48V, I = 8A,
= 6Ω
30
15
1.15
600
160
35
-
nC
nC
nC
pF
pF
pF
g(TOT)
GS
GS
GS
DS
DD
D
L
Gate Charge at 5V
Q
= 0 to -10V
= 0 to -2V
g(-10)
I
= -1.45mA
g(REF)
Threshold Gate Charge
Input Capacitance
Q
g(TH)
C
= -25V, V
= 0V,
GS
ISS
OSS
RSS
f = 1MHz
Output Capacitance
C
-
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C
-
o
R
Figure 12
TO-220
3.125
62
100
C/W
θJC
θJA
o
R
-
C/W
o
TO-251, TO-252
-
C/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
SYMBOL
TEST CONDITIONS
= -8A
MIN
TYP
MAX
UNITS
V
V
I
I
-
-
-
-
-1.5
125
SD
SD
t
= -8A, dI /dt = -100A/µs
SD
ns
rr
SD
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4-118
QQ：1902134819 复制
