RFP22N10各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号RFP22N10的概述

芯片RFP22N10的概述 RFP22N10是一款广泛应用于功率转换和开关电源电路中的N沟道MOSFET（金属氧化物半导体场效应管），其主要功能是以低于饱和状态的阻抗提供高效能的电流控制。MOSFET以其较高的输入阻抗和快速的开关特性，成为现代电子电路中不可或缺的器件，尤其在电源管理和功率放大应用中更是显示出其独特优势。RFP22N10的设计和制造旨在实现高效率及高可靠性的电气性能，非常适合用于开关电源、马达驱动、电机控制以及其他需要高效能的应用。芯片RFP22N10的详细参数 RFP22N10的主要电气参数包括： - 最大漏极-源极电压（Vds）：100V - 最大漏极电流（Id）：22A - 最大功耗（Pd）：94W（在适当的散热条件下） - 最大栅极-源极电压（Vgs）：±20V - 导通电阻（Rds(on)）：0.055Ω（Vgs = 10V时） - 开关时间（tr, tf）...

产品型号RFP22N10的Datasheet PDF文件预览

RFP22N10, RF1S22N10SM

Data Sheet

January 2002

File Number 2385.3

22A, 100V, 0.080 Ohm, N-Channel Power

MOSFETs

Features

• 22A, 100V

These N-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

• r = 0.080Ω

DS(ON)

• UIS SOA Rating Curve (Single Pulse)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA9845.

• 175 C Operating Temperature

• Related Literature

Ordering Information

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

RFP22N10

F1S22N10

RFP22N10

Symbol

RF1S22N10SM

NOTE: When ordering use the entire part number. Add the sufﬁx, 9A,

to obtain theTO-263AB variant in tape and reel, e.g. RF1S22N10SM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

GATE

SOURCE

RFP22N10, RF1S22N10SM Rev. B

RFP22N10, RF1S22N10SM

Absolute Maximum Ratings T = 25 C, Unless Otherwise Speciﬁed

RFP22N10,

RF1S22N10SMS

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

100

DSS

Drain to Gate Voltage (R

= 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

100

0.67

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

W/ C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 175

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

300

260

pkg

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. T = 25 C to 150 C.

Electrical Speciﬁcations

T = 25 C, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

= 250µA, V = 0 (Figure 7)

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

Gate to Source Threshold Voltage

Zero-Gate Voltage Drain Current

100

DSS

= V , I = 250µA (Figure 9)

GS(TH)

DS D

= 80V, V

= 0V

µA

Ω

DSS

= 0V, T = 150 C

100

0.080

Gate to Source Leakage Current

20V, V

= 0

GSS

Drain to Source On Resistance (Note 2)

Turn-On Time

= 22A, V

= 10V (Figure 8)

DS(ON)

= 50Vwwwwwwwww, I = 11A,

(ON)

R = 4.5Ω, V

= 10V,

Turn-On Delay Time

Rise Time

d(ON)

= 25Ω

(Figure 11)

Turn-Off Delay Time

Fall Time

d(OFF)

Turn-Off Time

120

150

3.5

1.5

(OFF)

Total Gate Charge

= 0V to 20V

= 0V to 10V

= 0V to 2V

= 80V, I ≈ 22A,

G(TOT)

R = 3.64Ω

Gate Charge at 10V

G(10)

G(TH)

= 1mA

g(REF)

(Figure 11)

Threshold Gate Charge

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

C/W

θJC

θJA

TO-220 and TO-263

C/W

Source to Drain Diode Speciﬁcations

PARAMETER

Source to Drain Diode Voltage (Note 2)

Diode Reverse Recovery Time

NOTE:

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

1.5

UNITS

= 22A

= 22A, dI /dt = 100A/µs

200

2. Pulse Test: Pulse Duration = 300µs maximum, duty cycle = 2%.

RFP22N10, RF1S22N10SM Rev. B

RFP22N10, RF1S22N10SM

Typical Performance Curves ^{Unless otherwise Speciﬁed}

1.2

1.0

0.8

0.6

0.4

0.2

100

125

150

175

125

100

175

150

, CASE TEMPERATURE ( C)

T , CASE TEMPERATURE ( C)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

100

= MAX RATED

= 20V

SINGLE PULSE

= 25 C

MAX (CONTINUOUS)

DC OPERATION

STARTING T = 25 C

OPERATION IN THIS AREA

MAY BE LIMITED BY r

DS(ON)

STARTING T = 150 C

If R = 0

= (L)(I )/(1.3 RATED BV

- V

)

If R ≠ 0

= (L/R)ln[(I

DSS

= 100V

DSS(MAX)

R)/(1.3 RATED BV

- V ) + 1]

DSS DD

0.1

100

, DRAIN TO SOURCE VOLTAGE (V)

0.01

0.1

,TIME IN AVALANCHE (ms)

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX.

= 10V

= 15V

= 7V

= 8V

= -55 C

= 175 C

= 6V

= 25 C

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

= 25 C

= 5V

= 4V

, DRAIN TO SOURCE VOLTAGE (V)

, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. SATURATION CHARACTERISTICS

FIGURE 6. TRANSER CHARACTERISTICS

RFP22N10, RF1S22N10SM Rev. B

RFP22N10, RF1S22N10SM

Typical Performance Curves Unless otherwise Speciﬁed (Continued)

3.0

2.5

2.0

= 22A, V = 10V

= 250µA

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.5

1.0

0.5

2.0

1.5

1.0

0.5

-50

100

150

200

100

150

200

-50

T , JUNCTION TEMPERATURE ( C)

FIGURE 7. NORMALIZED DRAINTO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 8. NORMALIZED DRAINTO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2500

1.50

= 0V, f = 1MHz

= V , I = 250µA

= C

+ C

ISS

1.25

1.00

0.75

0.50

0.25

= C

RSS

OSS

2000

1500

≈ C

+ C

ISS

1000

500

OSS

RSS

-50

100

150

200

T , JUNCTION TEMPERATURE ( C)

, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 9. NORMALIZED GATETHRESHOLDVOLTAGE vs

JUNCTION TEMPERATURE

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

100

GATE

SOURCE

VOLTAGE

7.5

= 4.55Ω

= V

DSS

DD DSS

= 1mA

= 10V

G(REF)

0.75V

0.50V

0.25V

DSS

0.75V

0.50V

0.25V

DSS

2.5

DRAIN TO SOURCE VOLTAGE

G(REF)

t,TIME (µs)

G(ACT)

NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.

FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

RFP22N10, RF1S22N10SM Rev. B

RFP22N10, RF1S22N10SM

Test Circuits and Waveforms

DSS

VARY t TO OBTAIN

REQUIRED PEAK I

DUT

0.01Ω

FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 13. UNCLAMPED ENERGY WAVEFORMS

OFF

d(OFF)

d(ON)

90%

10%

DUT

90%

50%

PULSE WIDTH

10%

FIGURE 14. SWITCHING TIME TEST CIRCUIT

FIGURE 15. RESISTIVE SWITCHING WAVEFORMS

g(TOT)

DUT

G(REF)

FIGURE 16. GATE CHARGE TEST CIRCUIT

FIGURE 17. GATE CHARGE WAVEFORMS

RFP22N10, RF1S22N10SM Rev. B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

SMART START™

STAR*POWER™

Stealth™

VCX™

FAST

ACEx™

Bottomless™

CoolFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

FASTr™

FRFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

CROSSVOLT™

DenseTrench™

DOME™

POP™

Power247™

PowerTrench^â

QFET™

EcoSPARK™

E²CMOS^TM

TinyLogic™

QS™

EnSigna^TM

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

SILENTSWITCHER^â

FACT™

FACT Quiet Series™

UltraFET^â

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

RFP22N10相关文章

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RFP22N10产品参数

型号:	RFP22N10
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	THOMSON CONSUMER ELECTRONICS
Reach Compliance Code：	unknown
风险等级：	5.87
Is Samacsys：	N
配置：	Single
最大漏极电流 (Abs) (ID)：	22 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	100 W
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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