STPS1545CT/CF/CG/CFP/CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
45
Unit
V
VRRM
Repetitive peak reverse voltage
IF(RMS) RMS forward current
20
A
IF(AV)
Average forward
TO-220AB / D2PAK
I2PAK
Tc = 157°C
Tc = 130°C
Per diode
7.5
A
current δ = 0.5
ISOWATT220AB
TO-220FPAB
Per device
15
150
1
IFSM
IRRM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
A
A
Repetitive peak reverse current
tp = 2 µs square
F = 1kHz
IRSM
PARM
Tstg
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
tp = 100 µs square
tp = 1µs Tj = 25°C
2
A
2700
W
-65 to +175 °C
Tj
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
175
°C
dV/dt
10000
V/µs
dPtot
1
* :
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth(j − a)
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
TO-220AB / D2PAK / I2PAK
Per diode
Total
3.0
1.7
°C/W
ISOWATT220AB / TO-220FPAB
Per diode
Total
5.5
4.2
Rth (c)
TO-220AB / D2PAK / I2PAK
Coupling
0.35
2.9
ISOWATT220AB / TO-220FPAB
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
µA
mA
V
IR *
Reverse leakage current
Tj = 25°C
VR = VRRM
100
Tj = 125°C
Tj = 125°C
Tj = 25°C
5
15
VF *
Forward voltage drop
IF = 7.5 A
IF = 15 A
IF = 15 A
0.5
0.57
0.84
0.72
Tj = 125°C
0.65
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
2
P = 0.42 x IF(AV) + 0.020 IF (RMS)
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